公开(公告)号：US20110045745A1

公开(公告)日：2011-02-24

申请号：US12866485

申请日：2009-02-03

Applicant: Joke De Messemaeker ,  Stijn Put ,  Dirk Van-Genechten ,  Yves Van Rompaey ,  Daniël Nelis ,  Yvan Strauven ,  Gustaaf Van Tendeloo

Inventor： Joke De Messemaeker ,  Stijn Put ,  Dirk Van-Genechten ,  Yves Van Rompaey ,  Daniël Nelis ,  Yvan Strauven ,  Gustaaf Van Tendeloo

IPC: B24B29/00 ,  C09K3/14 ,  C09K13/00

CPC classification number: C01F17/0043 ,  B82Y30/00 ,  C01P2002/54 ,  C01P2002/77 ,  C01P2004/64 ,  C01P2006/12 ,  Y10T428/2982

Abstract: The present invention relates to doped ceria (CeO2) abrasive particles, having an essentially octahedral morphology. Such abrasives are used in water-based slurries for Chemical Mechanical Polishing (CMP) of subrates such as silicon wafers. The invention more particularly concerns yttrium-doped ceria particles having a specific surface area of 10 to 120 m2/g, characterized in that at least 95 wt %, preferably at least 99 wt %, of the particles are mono-crystalline and in that the particles' surfaces consist of more than 70%, preferably of more than 80%, of planes parallel to {111} planes. A novel gas phase process for synthesizing this product is also disclosed, comprising the steps of providing a hot gas stream, —and, introducing into said gas stream a cerium-bearing reactant, a dopant-bearing reactant, and an oxygen-bearing reactant, —the temperature of said gas stream being chosen so as to atomize said reactant, the reactant being selected so as to form, upon cooling, doped ceria particles. Abrasive slurries based on the above ceria offer a low level of induced detectivity in the polished substrate, while ensuring a good removal rate.

Abstract translation: 本发明涉及具有基本八面体形态的掺杂二氧化铈（CeO 2）磨料颗粒。 这种研磨剂用于水性浆料中用于诸如硅晶片的亚速率化学机械抛光（CMP）。 本发明更具体地涉及比表面积为10至120m 2 / g的掺钇二氧化铈颗粒，其特征在于至少95wt％，优选至少99wt％的颗粒是单晶的，并且其中 颗粒表面由大于70％，优选大于80％的平面{111}平面的平面组成。 还公开了一种用于合成该产品的新型气相方法，其包括提供热气流的步骤，并且向所述气流中引入含铈反应物，含掺杂剂的反应物和含氧反应物， - 选择所述气流的温度以雾化所述反应物，所述反应物被选择为在冷却时形成掺杂的二氧化铈颗粒。 基于上述二氧化铈的磨料浆料在抛光的基材中提供低水平的诱导检测，同时确保良好的去除速率。