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    Photoresist composition and method of manufacturing a thin-film transistor substrate using the same
    3.
    发明授权
    Photoresist composition and method of manufacturing a thin-film transistor substrate using the same 有权
    光刻胶组合物及使用其制造薄膜晶体管基板的方法

    公开(公告)号：US07955784B2

    公开(公告)日：2011-06-07

    申请号：US11554194

    申请日：2006-10-30

    申请人： Hi-Kuk Lee ,  Woo-Seok Jeon ,  Doo-Hee Jung ,  Jeong-Min Park ,  Deok-Man Kang ,  Si-Young Jung ,  Jae-Young Choi

    发明人： Hi-Kuk Lee ,  Woo-Seok Jeon ,  Doo-Hee Jung ,  Jeong-Min Park ,  Deok-Man Kang ,  Si-Young Jung ,  Jae-Young Choi

    IPC分类号： G03F7/30

    CPC分类号： H01L27/1288 ,  G03F7/0233 ,  G03F7/0236 ,  H01L27/1214

    摘要： A photoresist composition includes about 100 parts by weight of resin mixture including novolak resin and acryl resin and about 10 parts to about 50 parts by weight of naphthoquinone diazosulfonic acid ester. A weight-average molecular weight of the novolak resin is no less than about 30,000. A weight-average molecular weight of the acryl resin is no less than about 20,000. The acryl resin makes up about 1% to about 15% of the total weight of the resin mixture. When a photoresist film formed using the photoresist composition is heated, a profile variation of the photoresist composition is relatively small. Therefore, a residual photoresist film has a uniform thickness, and a short circuit and/or an open defect in a TFT substrate may be reduced.

    摘要翻译： 光致抗蚀剂组合物包括约100重量份的包括酚醛清漆树脂和丙烯酸树脂的树脂混合物和约10重量份至约50重量份的萘醌重氮磺酸酯。 酚醛清漆树脂的重均分子量不小于约30,000。 丙烯酸树脂的重均分子量不小于约20,000。 丙烯酸树脂占树脂混合物总重量的约1％至约15％。 当使用光致抗蚀剂组合物形成的光致抗蚀剂膜被加热时，光致抗蚀剂组合物的轮廓变化相对较小。 因此，残留的光致抗蚀剂膜具有均匀的厚度，并且可能减小TFT基板中的短路和/或开路缺陷。

    PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR SUBSTRATE USING THE SAME
    4.
    发明申请
    PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR SUBSTRATE USING THE SAME 有权
    光电组合物及其制造方法使用薄膜晶体管基板

    公开(公告)号：US20070259272A1

    公开(公告)日：2007-11-08

    申请号：US11554194

    申请日：2006-10-30

    申请人： Hi-Kuk LEE ,  Woo-Seok JEON ,  Doo-Hee JUNG ,  Jeong-Min PARK ,  Deok-Man KANG ,  Si-Young JUNG ,  Jae-Young CHOI

    发明人： Hi-Kuk LEE ,  Woo-Seok JEON ,  Doo-Hee JUNG ,  Jeong-Min PARK ,  Deok-Man KANG ,  Si-Young JUNG ,  Jae-Young CHOI

    IPC分类号： G03C5/00

    CPC分类号： H01L27/1288 ,  G03F7/0233 ,  G03F7/0236 ,  H01L27/1214

    摘要： A photoresist composition includes about 100 parts by weight of resin mixture including novolak resin and acryl resin and about 10 parts to about 50 parts by weight of naphthoquinone diazosulfonic acid ester. A weight-average molecular weight of the novolak resin is no less than about 30,000. A weight-average molecular weight of the acryl resin is no less than about 20,000. A content of the acryl resin is about 1% to about 15% by weight based on a total weight of the resin mixture. When a photoresist film formed using the photoresist composition is heated, a profile variation of the photoresist composition is relatively small. Therefore, a residual photoresist film has a uniform thickness, and a short circuit and/or an open defect in a TFT substrate may be reduced.

    摘要翻译： 光致抗蚀剂组合物包括约100重量份的包括酚醛清漆树脂和丙烯酸树脂的树脂混合物和约10重量份至约50重量份的萘醌重氮磺酸酯。 酚醛清漆树脂的重均分子量不小于约30,000。 丙烯酸树脂的重均分子量不小于约20,000。 基于树脂混合物的总重量，丙烯酸树脂的含量为约1重量％至约15重量％。 当使用光致抗蚀剂组合物形成的光致抗蚀剂膜被加热时，光致抗蚀剂组合物的轮廓变化相对较小。 因此，残留的光致抗蚀剂膜具有均匀的厚度，并且可能减小TFT基板中的短路和/或开路缺陷。

    PHOTORESIST COMPOSITION AND METHOD OF FORMING A FINE PATTERN USING THE SAME
    10.
    发明申请
    PHOTORESIST COMPOSITION AND METHOD OF FORMING A FINE PATTERN USING THE SAME 审中-公开
    光刻胶组合物和使用其形成微细图案的方法

    公开(公告)号：US20130048604A1

    公开(公告)日：2013-02-28

    申请号：US13568233

    申请日：2012-08-07

    申请人： Min Kang ,  Jin-Ho Ju ,  Jong-Kwang Lee ,  Bong-Yeon Kim ,  Jeong-Won Kim ,  Deok-Man Kang ,  Jung-Hwan Cho ,  Kyung-Mi Choi

    发明人： Min Kang ,  Jin-Ho Ju ,  Jong-Kwang Lee ,  Bong-Yeon Kim ,  Jeong-Won Kim ,  Deok-Man Kang ,  Jung-Hwan Cho ,  Kyung-Mi Choi

    IPC分类号： G03F7/004 ,  B44C1/22 ,  G03F7/022 ,  G03F7/027 ,  G03F7/016

    CPC分类号： G03F7/0392 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/11

    摘要： A photoresist composition includes from about 20% to about 50% by weight of a polymer, from about 0.5% to about 1.5% by weight of a photo-acid generator, from about 0.01% to about 0.5% by weight of a photo absorber and the remainder includes an organic solvent. Also provided is a method of forming a fine pattern including forming a thin film on a substrate; forming a photoresist pattern by using a photoresist composition that includes from about 20% to about 50% by weight of a polymer, from about 0.5% to about 1.5% by weight of a photo-acid generator, from about 0.01% to about 0.5% by weight of a photo absorber and a remainder comprising an organic solvent; and patterning the thin film by using the photoresist pattern as an etch-stop layer to form a fine pattern.

    摘要翻译： 光致抗蚀剂组合物包括约20重量％至约50重量％的聚合物，约0.5重量％至约1.5重量％的光酸产生剂，约0.01重量％至约0.5重量％的光吸收剂， 剩余部分包括有机溶剂。 还提供了形成包括在基板上形成薄膜的精细图案的方法; 通过使用光致抗蚀剂组合物形成光致抗蚀剂图案，所述光致抗蚀剂组合物包含约20重量％至约50重量％的聚合物，约0.5重量％至约1.5重量％的光酸产生剂，约0.01重量％至约0.5重量％ 的光吸收剂，余量包含有机溶剂; 并通过使用光致抗蚀剂图案作为蚀刻停止层来图案化薄膜以形成精细图案。