公开(公告)号：US06697412B2

公开(公告)日：2004-02-24

申请号：US09834832

申请日：2001-04-13

申请人： Edward A. Beam, III ,  Gary A. Evans ,  Paul Saunier ,  Ming-Yih Kao ,  David M. Fanning ,  William H. Davenport ,  Andy Turudic ,  Walter A. Wohlmuth

发明人： Edward A. Beam, III ,  Gary A. Evans ,  Paul Saunier ,  Ming-Yih Kao ,  David M. Fanning ,  William H. Davenport ,  Andy Turudic ,  Walter A. Wohlmuth

IPC分类号： H01S5183

CPC分类号： H01L33/30 ,  B82Y20/00 ,  H01S5/0218 ,  H01S5/183 ,  H01S5/3409 ,  H01S5/3434

摘要： A light-emitting device includes a GaAs substrate, a light-emitting structure disposed above the substrate and capable of emitting light having a wavelength of about 1.3 microns to about 1.55 microns, and a buffer layer disposed between the substrate and the light-emitting structure. The composition of the buffer layer varies through the buffer layer such that a lattice constant of the buffer layer grades from a lattice constant approximately equal to a lattice constant of the substrate to a lattice constant approximately equal to a lattice constant of the light-emitting structure. The light-emitting device exhibits improved mechanical, electrical, thermal, and optical properties compared to similar light-emitting devices grown on InP substrates.

摘要翻译： 发光器件包括GaAs衬底，设置在衬底上方并能够发射波长约1.3微米至约1.55微米的光的发光结构，以及设置在衬底和发光结构之间的缓冲层 。 缓冲层的组成通过缓冲层变化，使得缓冲层的晶格常数从基本等于晶格常数的晶格常数等于晶体常数近似等于发光结构的晶格常数 。 与在InP衬底上生长的类似发光器件相比，发光器件具有改进的机械，电学，热学和光学性能。