公开(公告)号：US08440377B2

公开(公告)日：2013-05-14

申请号：US12949053

申请日：2010-11-18

Applicant: Tomohito Ozawa ,  Motoya Yamada ,  Kazuyoshi Akiyama ,  Daisuke Tazawa

Inventor： Tomohito Ozawa ,  Motoya Yamada ,  Kazuyoshi Akiyama ,  Daisuke Tazawa

IPC: G03G5/043

CPC classification number: G03G5/0433 ,  G03G5/08228

Abstract: An electrophotographic photosensitive member includes a substrate, a photoconductive layer, an intermediate layer, and a surface layer sequentially formed. The intermediate layer contains silicon, carbon and hydrogen, and a distribution of a hydrogen ratio, which is a ratio of the number of hydrogen atoms to the number of silicon, carbon and hydrogen atoms, in the intermediate layer has a maximum region. A largest hydrogen atomic ratio in the intermediate layer is larger than a hydrogen atomic ratio in the surface layer, and the hydrogen atomic ratio in the surface layer is 0.30 to 0.45. A distribution of a carbon atomic ratio, which is a ratio of the number of carbon atoms to the number of silicon and carbon atoms, in the intermediate layer has a maximum and a minimum region. A carbon atomic ratio in the maximum region is 0.53 to 0.63, a carbon atomic ratio in the minimum region is 0.47 or more, and the maximum hydrogen region in the intermediate layer is partially superimposed on the minimum carbon region.

Abstract translation: 电子照相感光构件包括基底，光电导层，中间层和顺序形成的表面层。 中间层含有硅，碳和氢，中间层中氢原子数与硅原子数，碳原子数和氢原子数之比的氢比分布最大。 中间层中最大的氢原子比大于表面层中的氢原子比，表面层中的氢原子比为0.30〜0.45。 作为中间层的碳原子数与硅原子数与碳原子数的比例的碳原子比的分布具有最大值和最小值。 最大区域的碳原子比为0.53〜0.63，最小区域的碳原子比为0.47以上，中间层的最大氢区域部分地叠加在最小碳区域上。

公开(公告)号：US20110129776A1

公开(公告)日：2011-06-02

申请号：US13056734

申请日：2009-12-16

Applicant: Kazuyoshi Akiyama ,  Shigenori Ueda ,  Daisuke Tazawa ,  Tomohito Ozawa

Inventor： Kazuyoshi Akiyama ,  Shigenori Ueda ,  Daisuke Tazawa ,  Tomohito Ozawa

IPC: G03G13/22

CPC classification number: G03G5/14704 ,  G03G5/08214 ,  G03G5/08221 ,  G03G5/08285 ,  G03G13/045

Abstract: An image-forming method is provided which enable high-quality images to be formed over a long time period. In the image-forming method, an electrophotographic photosensitive member is used having a surface layer formed of a hydrogenated amorphous silicon carbide in which a ratio of the number of carbon atoms to the sum of the number of silicon atoms and the number of the carbon atoms in the surface layer is 0.61 or more and 0.75 or less, and the sum of the atomic density of the silicon atoms and the atomic density of the carbon atoms in the surface layer is 6.60×1022 atoms/cm3 or more, and the peak wavelength of pre-exposure light is shorter than the peak wavelength of image exposure light.

Abstract translation: 提供了能够在长时间内形成高质量图像的图像形成方法。 在图像形成方法中，使用电子照相感光构件，其具有由氢化非晶碳化硅形成的表面层，其中碳原子数与硅原子数与碳原子数之和的比率 在表面层中为0.61以上且0.75以下，表面层中的硅原子的原子密度和碳原子的原子密度之和为6.60×1022原子/ cm 3以上，峰值波长 的预曝光光比图像曝光光的峰值波长短。

公开(公告)号：US06294299B2

公开(公告)日：2001-09-25

申请号：US09137081

申请日：1998-08-20

Applicant: Shinji Tsuchida ,  Hiroaki Niino ,  Satoshi Kojima ,  Daisuke Tazawa

Inventor： Shinji Tsuchida ,  Hiroaki Niino ,  Satoshi Kojima ,  Daisuke Tazawa

IPC: G03G1502

CPC classification number: G03G5/08235 ,  G03G5/08242

Abstract: An electrophotographic light-receiving member has a conductive support and a photoconductive layer composed of a non-monocrystalline material comprising silicon atoms as a matrix, hydrogen and/or halogen atoms, and an element belonging to Group IIIb of the periodic table. The photoconductive layer has from the surface side toward the conductive support side, a third layer region that absorbs 50-90% of incident image exposure light and a second layer region that absorbs 60-90% of pre-exposure light incident on the photoconductive layer. The Group IIIb element is present such that its content decreases from the conductive support side to the surface side. In three embodiments the photoconductive layer has, respectively: 10-30 at. % H; 10-20 at. % H and 25-40 at % H; an optical band gap of 1.75-1.85 eV, 1.65-1.75 eV and 1.80-1.90 eV and a characteristic energy of each of 50-55 meV.

Abstract translation: 电子照相受光部件具有导电性支持体和由包含硅原子作为基体的非单晶材料，氢和/或卤素原子以及属于元素周期表IIIb族的元素构成的光电导层。 光电导层从表面侧朝向导电支撑侧，吸收50-90％的入射图像曝光光的第三层区域和吸收入射在光电导层上的60-90％的预曝光光的第二层区域 。 IIIb族元素的存在使得其含量从导电性支持侧减少到表面侧。 在三个实施例中，光电导层分别具有：10-30英寸 ％ H; 10-20在 ％H和25-40at％H; 1.75〜85 eV，1.65〜1.75 eV，1.80〜1.90 eV的光学带隙，50〜55 meV的特征能量。

公开(公告)号：US08465891B2

公开(公告)日：2013-06-18

申请号：US12943977

申请日：2010-11-11

Applicant: Tomohito Ozawa ,  Kazuyoshi Akiyama ,  Yuu Nishimura ,  Daisuke Tazawa

Inventor： Tomohito Ozawa ,  Kazuyoshi Akiyama ,  Yuu Nishimura ,  Daisuke Tazawa

IPC: G03G5/00

CPC classification number: G03G5/08235 ,  G03G5/0433 ,  G03G5/144 ,  G03G5/14704

Abstract: An electrophotographic photosensitive member includes a photoconductive layer, an intermediate layer, and a surface layer. When Si+C atom density in the surface layer is represented by DS×1022 atoms/cm3, the DS is 6.60 or more, and when the maximal value of H/(Si+H) in a distribution of hydrogen quantity in the photoconductive layer in a layer thickness direction is represented by HPmax, the average value of the H/(Si+H) in the second photoconductive region is represented by HP2, the DS and the HP2 satisfy the following expression (1) and the DS and the HPmax satisfy the following expression (2). HP2≧0.07×DS−0.38  Expression (1) HPmax≦0.04×DS+0.60  Expression (2)

Abstract translation: 电子照相感光构件包括光电导层，中间层和表面层。 当表面层的Si + C原子密度由DS×1022原子/ cm3表示时，DS为6.60以上，并且当光电导层中氢量分布中H /（Si + H）的最大值 在层厚度方向上由HPmax表示，第二光电导区域中的H /（Si + H）的平均值由HP2表示，DS和HP2满足以下表达式（1），DS和HPmax 满足以下表达式（2）。 HP2> = 0.07×DS-0.38表达式（1）HPmax@0.04×DS+0.60表达式（2）

公开(公告)号：US08758971B2

公开(公告)日：2014-06-24

申请号：US13056734

申请日：2009-12-16

Applicant: Kazuyoshi Akiyama ,  Shigenori Ueda ,  Daisuke Tazawa ,  Tomohito Ozawa

Inventor： Kazuyoshi Akiyama ,  Shigenori Ueda ,  Daisuke Tazawa ,  Tomohito Ozawa

IPC: G03G21/06

CPC classification number: G03G5/14704 ,  G03G5/08214 ,  G03G5/08221 ,  G03G5/08285 ,  G03G13/045

Abstract: An image-forming method uses an electrophotographic photosensitive member having a surface layer formed of a hydrogenated amorphous silicon carbide in which a ratio of the number of carbon atoms to the sum of the number of silicon atoms and the number of the carbon atoms in the surface layer is 0.61 or more and 0.75 or less, and the sum of the atomic density of the silicon atoms and the atomic density of the carbon atoms in the surface layer is 6.60×1022 atoms/cm3 or more, and the peak wavelength of pre-exposure light is shorter than the peak wavelength of image exposure light.

Abstract translation: 图像形成方法使用具有由氢化非晶碳化硅形成的表面层的电子照相感光构件，其中碳原子数与硅原子数与表面中碳原子数之和的比率 层为0.61以上且0.75以下，表面层中的硅原子的原子密度和碳原子的原子密度之和为6.60×1022原子/ cm 3以上， 曝光光比图像曝光光的峰值波长短。

公开(公告)号：US08563203B2

公开(公告)日：2013-10-22

申请号：US13165022

申请日：2011-06-21

Applicant: Yuu Nishimura ,  Hironori Owaki ,  Daisuke Tazawa

Inventor： Yuu Nishimura ,  Hironori Owaki ,  Daisuke Tazawa

IPC: G03G5/00

CPC classification number: G03G15/75 ,  G03G5/08221 ,  G03G5/08228

Abstract: An electrophotographic photosensitive member is configured such that the average value Hx_ave of the content of hydrogen atoms in a central portion area of a photoconductive layer in a cylindrically axial direction thereof, the content Hx of the hydrogen atoms at an arbitrary point in the central portion area, the average value Hy_ave of the content of the hydrogen atoms in an end area of the photoconductive layer in the cylindrically axial direction thereof, and the content Hy of the hydrogen atoms at an arbitrary point in the end area satisfy 10≦Hx_ave≦30, Hx

Abstract translation: 电子照相感光构件被配置为使得光导电层的圆筒轴方向的中心部分区域中的氢原子的含量的平均值Hx_ave，中心部分区域中的任意点处的氢原子的含量Hx 在光电导层的端面区域中的氢原子的含量在其圆柱轴方向上的平均值Hy_ave和端部区域任意点处的氢原子的含量Hy满足10 @ Hx_ave @ 30， Hx

公开(公告)号：US20110318678A1

公开(公告)日：2011-12-29

申请号：US13165022

申请日：2011-06-21

Applicant: Yuu Nishimura ,  Hironori Owaki ,  Daisuke Tazawa

Inventor： Yuu Nishimura ,  Hironori Owaki ,  Daisuke Tazawa

IPC: G03G15/00

CPC classification number: G03G15/75 ,  G03G5/08221 ,  G03G5/08228

Abstract: An electrophotographic photosensitive member is configured such that the average value Hx_ave of the content of hydrogen atoms in a central portion area of a photoconductive layer in a cylindrically axial direction thereof, the content Hx of the hydrogen atoms at an arbitrary point in the central portion area, the average value Hy_ave of the content of the hydrogen atoms in an end area of the photoconductive layer in the cylindrically axial direction thereof, and the content Hy of the hydrogen atoms at an arbitrary point in the end area satisfy 10≦Hx_ave≦30, Hx

Abstract translation: 电子照相感光构件被配置为使得光导电层的圆筒轴方向的中心部分区域中的氢原子的含量的平均值Hx_ave，中心部分区域中的任意点处的氢原子的含量Hx 光电导层的端面区域中的氢原子的含量的平均值Hy_ave在其圆柱轴方向上，以及端部区域中任意点的氢原子的含量Hy满足10＆lt; nlE; Hx_ave＆nlE; 30， Hx

公开(公告)号：US20110123915A1

公开(公告)日：2011-05-26

申请号：US12949053

申请日：2010-11-18

Applicant: Tomohito Ozawa ,  Motoya Yamada ,  Kazuyoshi Akiyama ,  Daisuke Tazawa

Inventor： Tomohito Ozawa ,  Motoya Yamada ,  Kazuyoshi Akiyama ,  Daisuke Tazawa

IPC: G03G5/043

CPC classification number: G03G5/0433 ,  G03G5/08228

Abstract: The invention is an electrophotographic photosensitive member comprising a substrate, a photoconductive layer, an intermediate layer and a surface layer sequentially formed, wherein the intermediate contains silicon, carbon and hydrogen, a distribution of a hydrogen ratio which is a ratio of the number of hydrogen to the number of silicon, carbon and hydrogen in the intermediate has a maximum region, a largest hydrogen ratio in the intermediate is larger than a hydrogen ratio in the surface, the hydrogen ratio in the surface is 0.30 to 0.45, a distribution of a carbon ratio which is a ratio of the number of carbon to the number of silicon and carbon in the intermediate has a maximum and a minimum region, a carbon maximum region is 0.53 to 0.63, a carbon minimum region is 0.47 or more, and the maximum hydrogen region in the intermediate is partially superimposed on the minimum carbon region.

Abstract translation: 本发明是一种电子照相感光构件，其包括基底，光电导层，中间层和顺序形成的表面层，其中中间体包含硅，碳和氢，氢比分布为氢的数量比 相对于硅的数量，中间体中的碳和氢具有最大区域，中间体中最大的氢比大于表面中的氢比，表面中的氢比为0.30至0.45，碳的分布 作为中间体的碳数与碳数之比的比例为最大和最小的区域，碳最大区域为0.53〜0.63，碳最小区域为0.47以上，最大氢 中间体的区域部分地叠加在最小碳区域上。

公开(公告)号：US20110123914A1

公开(公告)日：2011-05-26

申请号：US12949015

申请日：2010-11-18

Applicant: Kazuyoshi Akiyama ,  Tomohito Ozawa ,  Daisuke Tazawa ,  Yuu Nishimura

Inventor： Kazuyoshi Akiyama ,  Tomohito Ozawa ,  Daisuke Tazawa ,  Yuu Nishimura

IPC: G03G5/04

CPC classification number: G03G5/0433 ,  G03G5/0507 ,  G03G5/08242 ,  G03G5/14704

Abstract: The present invention provides an electrophotographic photosensitive member including a photoconductive layer, an intermediate layer made of hydrogenated amorphous silicon carbide on the photoconductive layer, and a surface layer made of hydrogenated amorphous silicon carbide on the intermediate layer, wherein a ratio (C/(Si+C); C2) in the surface layer is 0.61 to 0.75, and a sum of atom density of silicon and carbon is 6.60×1022 atoms/cm3 or more, a ratio (C/(Si+C); C1) and a sum (D1) of atom density of silicon and carbon in the intermediate layer increase continuously from the photoconductive layer toward the surface layer without exceeding C2 and D2, and the intermediate layer has a continuous region in which C1 is 0.25 to C2 while D1 is 5.50×1022 to 6.45×1022 atoms/cm3, the region being 150 nm or larger in a layer thickness direction, and an electrophotographic apparatus equipped therewith.

Abstract translation: 本发明提供了一种电子照相感光构件，其包括光导电层，在光电导层上由氢化非晶碳化硅制成的中间层，以及在中间层上由氢化非晶碳化硅制成的表面层，其中（C /（Si + C）; C2）为0.61〜0.75，硅与碳的原子密度之和为6.60×1022原子/ cm3以上，比例（C /（Si + C）：C1）和 中间层中硅和碳的原子密度之和（D1）不再超过C2和D2而从光电导层连续地朝向表面层增加，并且中间层具有C1为0.25至C2的连续区域，而D1为5.50 ×1022〜6.45×1022原子/ cm3，该区域在层厚方向上为150nm以上，以及配备有电子照相设备。

公开(公告)号：US07550180B2

公开(公告)日：2009-06-23

申请号：US12055431

申请日：2008-03-26

Applicant: Toshiyasu Shirasuna ,  Tatsuyuki Aoike ,  Kazuyoshi Akiyama ,  Hitoshi Murayama ,  Takashi Otsuka ,  Daisuke Tazawa ,  Kazuto Hosoi ,  Yukihiro Abe

Inventor： Toshiyasu Shirasuna ,  Tatsuyuki Aoike ,  Kazuyoshi Akiyama ,  Hitoshi Murayama ,  Takashi Otsuka ,  Daisuke Tazawa ,  Kazuto Hosoi ,  Yukihiro Abe

IPC: H01L21/00 ,  C23C16/00

CPC classification number: C23C16/24 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/32183 ,  H05H1/46

Abstract: In a plasma treatment method of and apparatus for treating the surface of a treatment target substrate by utilizing glow discharge produced by supplying high-frequency power into an inside-evacuated reactor through a high-frequency power supply means, a plurality of impedance regulation means for regulating impedances on the side of the reactor and on the side of the high-frequency power supply means are provided correspondingly to the impedances of a plurality of reactors, and the high-frequency power is supplied into the reactors via the impedance regulation means corresponding to the reactors. Plasma treatment can be made in a good efficiency and a low cost on a plurality of reactors having different impedances.

Abstract translation: 在通过利用通过高频电源装置将高频电力提供给内部抽真空电抗器而产生的辉光放电来处理目标衬底表面的等离子体处理方法和装置中，多个阻抗调节装置 对应于多个电抗器的阻抗设置在电抗器一侧和高频电源装置一侧上的调节阻抗，并且高频电力通过对应于 反应堆。 可以在具有不同阻抗的多个反应器中以高效率和低成本进行等离子体处理。