公开(公告)号：US20110007560A1

公开(公告)日：2011-01-13

申请号：US12787746

申请日：2010-05-26

Applicant: Bernard Dieny ,  Cristian Papusoi ,  Ursula Ebels ,  Dimitri Houssameddine ,  Liliana Buda-Prejbeanu ,  Ricardo Sousa

Inventor： Bernard Dieny ,  Cristian Papusoi ,  Ursula Ebels ,  Dimitri Houssameddine ,  Liliana Buda-Prejbeanu ,  Ricardo Sousa

IPC: G11C11/14 ,  H01L29/82

CPC classification number: H01L27/228 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3286 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic device includes a magnetic reference layer with a fixed magnetisation direction located either in the plane of the layer or perpendicular to the plane of the layer, a magnetic storage layer with a variable magnetisation direction, a non-magnetic spacer separating the reference layer and the storage layer and a magnetic spin polarising layer with a magnetisation perpendicular to that of the reference layer, and located out of the plane of the spin polarising layer if the magnetisation of the reference layer is directed in the plane of the reference layer or in the plane of the spin polarising layer if the magnetisation of the reference layer is directed perpendicular to the plane of the reference layer. The spin transfer coefficient between the reference layer and the storage layer is higher than the spin transfer coefficient between the spin polarising layer and the storage layer.

Abstract translation: 磁性装置包括具有固定磁化方向的磁性参考层，其位于层的平面中或垂直于层的平面，具有可变磁化方向的磁存储层，分离参考层的非磁性间隔区和 存储层和具有垂直于参考层的磁化的磁性自旋偏振层，并且如果参考层的磁化被定向在参考层的平面中，并且位于参考层的平面内，则位于自旋极化层的平面之外，或者位于 如果参考层的磁化指向垂直于参考层的平面的自旋极化层的平面。 参考层和存储层之间的自旋传递系数高于自旋偏振层和存储层之间的自旋传递系数。

公开(公告)号：US08279666B2

公开(公告)日：2012-10-02

申请号：US12787746

申请日：2010-05-26

Applicant: Bernard Dieny ,  Cristian Papusoi ,  Ursula Ebels ,  Dimitri Houssameddine ,  Liliana Buda-Prejbeanu ,  Ricardo Sousa

Inventor： Bernard Dieny ,  Cristian Papusoi ,  Ursula Ebels ,  Dimitri Houssameddine ,  Liliana Buda-Prejbeanu ,  Ricardo Sousa

IPC: G11C11/14

CPC classification number: H01L27/228 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3286 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic device includes a magnetic reference layer with a fixed magnetization direction located either in the plane of the layer or perpendicular to the plane of the layer, a magnetic storage layer with a variable magnetization direction, a non-magnetic spacer separating the reference layer and the storage layer and a magnetic spin polarizing layer with a magnetization perpendicular to that of the reference layer, and located out of the plane of the spin polarizing layer if the magnetization of the reference layer is directed in the plane of the reference layer or in the plane of the spin polarizing layer if the magnetization of the reference layer is directed perpendicular to the plane of the reference layer. The spin transfer coefficient between the reference layer and the storage layer is higher than the spin transfer coefficient between the spin polarizing layer and the storage layer.

Abstract translation: 磁性装置包括具有固定磁化方向的磁性参考层，其位于层的平面中或垂直于层的平面，具有可变磁化方向的磁存储层，分离参考层的非磁性间隔区和 存储层和具有垂直于参考层的磁化的磁自旋偏振层，并且如果参考层的磁化指向参考层的平面或位于参考层的平面内，则其位于自旋偏振层的平面之外 如果参考层的磁化垂直于参考层的平面指向自旋极化层的平面。 参考层和存储层之间的自旋传递系数高于自旋偏振层和存储层之间的自旋传递系数。