Radiation-sensitive elements having an antistatic layer containing
amorphous vanadium pentoxide
    1.
    发明授权
    Radiation-sensitive elements having an antistatic layer containing amorphous vanadium pentoxide 失效
    具有含有无定形五氧化二钒的抗静电层的辐射敏感元件

    公开(公告)号:US4203769A

    公开(公告)日:1980-05-20

    申请号:US705187

    申请日:1976-07-14

    申请人: Claude Guestaux

    发明人: Claude Guestaux

    摘要: An antistatic layer of a radiation-sensitive element, such as a photographic film or paper, is formed by coating and drying of an antistatic composition comprising an aqueous solution of an amorphous antistatic material, the aqueous solution having been produced by forming a melt comprised of at least 80% by weight of vanadium pentoxide and casting the melt into a solubilizing amount of water. In addition to vanadium pentoxide, the melt can contain a glass-forming compound, such as an alkaline metal phosphate or polyphosphate, as well as an oxide of an element that exists in at least two valence states, such as an oxide of molybdenum. The radiation-sensitive element preferably includes a protective overcoat layer covering the antistatic layer.

    摘要翻译: 辐射敏感元件如照相胶片或纸张的抗静电层通过涂覆和干燥包含非晶形抗静电材料的水溶液的抗静电组合物而形成,该水溶液是通过形成由 至少80重量%的五氧化二钒,并将熔体浇铸成增溶量的水。 除了五氧化二钒之外,熔体可以含有形成玻璃的化合物,例如碱金属磷酸盐或多磷酸盐,以及以至少两个价态存在的元素的氧化物,例如钼的氧化物。 辐射敏感元件优选包括覆盖抗静电层的保护性外涂层。