SOLAR CELL AND MANUFACTURING METHOD THEREOF
    1.
    发明申请
    SOLAR CELL AND MANUFACTURING METHOD THEREOF 审中-公开
    太阳能电池及其制造方法

    公开(公告)号:US20130133729A1

    公开(公告)日:2013-05-30

    申请号:US13562751

    申请日:2012-07-31

    Abstract: A solar cell includes a semiconductor substrate, a first intrinsic semiconductor layer and a second intrinsic semiconductor layer on the semiconductor substrate, the first intrinsic semiconductor layer and the second intrinsic semiconductor layer being spaced apart from each other, a first conductive semiconductor layer and a second conductive semiconductor layer respectively disposed on the first intrinsic semiconductor layer and the second intrinsic semiconductor layer, and a first electrode and a second electrode, each including a bottom layer on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, the bottom layer including a transparent conductive oxide, and an intermediate layer on the bottom layer, the intermediate layer being including copper.

    Abstract translation: 太阳能电池在半导体衬底上包括半导体衬底,第一本征半导体层和第二本征半导体层,第一本征半导体层和第二本征半导体层彼此间隔开,第一导电半导体层和第二本征半导体层 分别设置在第一本征半导体层和第二本征半导体层上的导电半导体层以及分别包括在第一导电半导体层和第二导电半导体层上的底层的第一电极和第二电极,底层 包括透明导电氧化物和底层上的中间层,中间层包括铜。

    PHOTOVOLTAIC DEVICE AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    PHOTOVOLTAIC DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    光伏器件及其制造方法

    公开(公告)号:US20130113059A1

    公开(公告)日:2013-05-09

    申请号:US13569142

    申请日:2012-08-07

    Abstract: A photovoltaic device includes a semiconductor substrate; an amorphous first conductive semiconductor layer on a first region of a first surface of the semiconductor substrate and containing a first impurity; an amorphous second conductive semiconductor layer on a second region of the first surface of the semiconductor substrate and containing a second impurity; and a gap passivation layer located between the first region and the second region on the semiconductor substrate, wherein the first conductive semiconductor layer is also on the gap passivation layer.

    Abstract translation: 光电器件包括半导体衬底; 在所述半导体衬底的第一表面的第一区域上并含有第一杂质的非晶体第一导电半导体层; 在所述半导体衬底的所述第一表面的第二区域上并含有第二杂质的无定形第二导电半导体层; 以及位于半导体衬底上的第一区域和第二区域之间的间隙钝化层,其中第一导电半导体层也在间隙钝化层上。

    SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
    7.
    发明申请
    SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
    太阳能电池及其制造方法

    公开(公告)号:US20120291860A1

    公开(公告)日:2012-11-22

    申请号:US13472744

    申请日:2012-05-16

    Abstract: A solar cell includes a base substrate having a first surface and a second surface opposite the first surface, the base substrate including a crystalline semiconductor and being configured to have solar light incident on the first surface, a doping pattern on a first portion of the second surface, the doping pattern including a first dopant, a first doping layer on a second portion of the second surface, the first doping layer including a second dopant, and the first and second portions of the second surface being different from each other, a first electrode on the first doping layer, and a second electrode on the doping pattern.

    Abstract translation: 太阳能电池包括具有第一表面和与第一表面相对的第二表面的基底基底,所述基底基底包括结晶半导体,并且被配置为具有入射在第一表面上的太阳光,在第二表面的第一部分上具有掺杂图案 表面,掺杂图案包括第一掺杂剂,第二表面的第二部分上的第一掺杂层,第一掺杂层包括第二掺杂剂,第二表面的第一和第二部分彼此不同,第一掺杂 第一掺杂层上的电极,以及掺杂图案上的第二电极。

    SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
    8.
    发明申请
    SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
    太阳能电池及其制造方法

    公开(公告)号:US20120234382A1

    公开(公告)日:2012-09-20

    申请号:US13293010

    申请日:2011-11-09

    Abstract: A solar cell and a method of manufacturing the solar cell, the solar cell including a first surface configured to receive incident sunlight and having a concavo-convex pattern, a substantially flat second surface opposite to the first surface, a first doped layer formed as a crystalline silicon layer having a first dopant, and a second doped layer formed as an amorphous silicon layer having a second dopant. The processes for forming these layers, with the exception of forming the first doped layer, are performed at a low temperature. Accordingly, reflectivity of sunlight may be minimized, a high terminal voltage may be generated, and a wafer including the solar cell can be kept from being bent.

    Abstract translation: 一种太阳能电池和太阳能电池的制造方法,所述太阳能电池包括被配置为接收入射的太阳光并具有凹凸图案的第一表面,与所述第一表面相对的大致平坦的第二表面,形成为所述第一表面的第一掺杂层 具有第一掺杂剂的晶体硅层和形成为具有第二掺杂剂的非晶硅层的第二掺杂层。 除了形成第一掺杂层之外,形成这些层的工艺在低温下进行。 因此,可以将太阳光的反射率最小化,可能产生高的端子电压,并且可以防止包括太阳能电池的晶片弯曲。

    SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
    10.
    发明申请
    SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
    太阳能电池及其制造方法

    公开(公告)号:US20120097226A1

    公开(公告)日:2012-04-26

    申请号:US13159725

    申请日:2011-06-14

    Abstract: A solar cell includes a semiconductor substrate including a first conductive type, a first amorphous silicon thin film layer disposed on the semiconductor substrate and a second amorphous silicon thin film layer including a second conductive type and disposed on the first amorphous silicon thin film layer. The first amorphous silicon thin film layer includes a first intrinsic silicon thin film layer, a second intrinsic silicon thin film layer facing the semiconductor substrate while interposing the first intrinsic silicon thin film layer therebetween and a first low concentration silicon thin film layer including the second conductive type and disposed between the first intrinsic silicon thin film layer and the second intrinsic silicon thin film layer.

    Abstract translation: 太阳能电池包括:半导体衬底,包括第一导电类型,设置在半导体衬底上的第一非晶硅薄膜层和包括第二导电类型的第二非晶硅薄膜层,并设置在第一非晶硅薄膜层上。 第一非晶硅薄膜层包括第一本征硅薄膜层,面对半导体衬底的第二本征硅薄膜层,同时在其间插入第一本征硅薄膜层,以及第一低浓度硅薄膜层,其包括第二导电 并且设置在第一本征硅薄膜层和第二本征硅薄膜层之间。

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