公开(公告)号：US06521545B1

公开(公告)日：2003-02-18

申请号：US09682822

申请日：2001-10-23

Applicant: Neng-Hui Yang ,  Chinh-Fu Lin ,  Yi-Fang Cheng ,  Cheng-Yuan Tsai

Inventor： Neng-Hui Yang ,  Chinh-Fu Lin ,  Yi-Fang Cheng ,  Cheng-Yuan Tsai

IPC: H01L2126

CPC classification number: H01L21/3105

Abstract: The invention shows a method of a surface treatment on a fluorine silicate glass film. At first a fluorine silicate glass layer is deposited on a semiconductor wafer. Partial fluorine ions in the fluorine silicate glass layer are in-situ removed to form a silicon oxide layer of a pre-determined thickness. Then, a photoresist layer is coated on the silicon oxide layer. After an exposing process, a pre-determined latent pattern is formed in the photoresist layer. Finally, after a developing process, the pre-determined latent pattern of the photoresist is removed so as to expose corresponding portions of the silicon oxide layer underneath the latent pattern of the photoresist layer. As a result, the present invention solves a problem that fluorine ions in the fluorine silicate glass layer 24 diffuse to a surface of the fluorine silicate glass layer 24 to combine with water to form hydrofluoric acid, that contaminates the photoresist and leads to reliability issues.

Abstract translation: 本发明示出了在氟硅玻璃膜上进行表面处理的方法。 首先，在半导体晶片上沉积氟硅酸盐玻璃层。 氟硅玻璃层中的部分氟离子被原位去除以形成预定厚度的氧化硅层。 然后，将光致抗蚀剂层涂覆在氧化硅层上。 在曝光处理之后，在光致抗蚀剂层中形成预定的潜像。 最后，在显影处理之后，去除光致抗蚀剂的预定潜在图案，以暴露在光致抗蚀剂层的潜在图案之下的氧化硅层的相应部分。 结果，本发明解决了氟硅玻璃层24中的氟离子扩散到氟硅酸盐玻璃层24的表面，与水结合形成氢氟酸的问题，污染光致抗蚀剂并导致可靠性问题。