公开(公告)号：US06268276B1

公开(公告)日：2001-07-31

申请号：US09216823

申请日：1998-12-21

Applicant: Lap Chan ,  Kheng Chok Tee ,  Kok Keng Ong ,  Chin Hwee Seah

Inventor： Lap Chan ,  Kheng Chok Tee ,  Kok Keng Ong ,  Chin Hwee Seah

IPC: H01L214763

CPC classification number: H01L21/7682

Abstract: A new method of forming air gaps between adjacent conducting lines of a semiconductor circuit by using a “holes everywhere” or a “reverse metal holes” mask that can be used to create holes in a dielectric layer. The dielectric that is being etched has been deposited across conducting lines, the holes that are being formed in this manner are closed by depositing a dielectric across the top of the holes. The holes can be etched across the entire layer of the deposited dielectric or can be etched in between the conducting lines.

Abstract translation: 在半导体电路的相邻导线之间通过使用“各处的孔”形成气隙的新方法或可用于在电介质层中产生孔的“反向金属孔”掩模。 被蚀刻的电介质已经沉积在导电线之间，以这种方式形成的孔通过在孔的顶部沉积电介质来封闭。 可以在沉积的电介质的整个层上蚀刻孔，或者可以在导电线之间蚀刻孔。