公开(公告)号：US20090268501A1

公开(公告)日：2009-10-29

申请号：US12111905

申请日：2008-04-29

申请人： Cheng-Hung Hung Lee ,  Ching-Wei Wu ,  Hung-Jen Liao

发明人： Cheng-Hung Hung Lee ,  Ching-Wei Wu ,  Hung-Jen Liao

IPC分类号： G11C5/06

CPC分类号： G11C5/063 ,  G11C11/419

摘要： This invention discloses a static random access memory (SRAM) cell array structure which comprises a first and second bit-line coupled to a column of SRAM cells, the first and second bit-lines being substantially parallel to each other and formed by a first metal layer, and a first conductive line being placed between the first and second bit-lines and spanning across the column of SRAM cells without making conductive coupling thereto, the first conductive line being also formed by the first metal layer.

摘要翻译： 本发明公开了一种静态随机存取存储器（SRAM）单元阵列结构，其包括耦合到一列SRAM单元的第一和第二位线，第一和第二位线基本上彼此平行并由第一金属 层，并且第一导线被放置在第一和第二位线之间并跨越SRAM单元的列而不与其形成导电耦合，第一导电线也由第一金属层形成。