公开(公告)号：US20140287592A1

公开(公告)日：2014-09-25

申请号：US14189367

申请日：2014-02-25

Applicant: Sukjin CHUNG ,  JongCheol LEE ,  Younsoo KIM ,  Chayoung YOO ,  Geunkyu CHOI

Inventor： Sukjin CHUNG ,  JongCheol LEE ,  Younsoo KIM ,  Chayoung YOO ,  Geunkyu CHOI

IPC: H01L21/02

CPC classification number: H01L21/02219 ,  C23C16/45529 ,  H01L21/02159 ,  H01L21/022 ,  H01L21/0228

Abstract: According to example embodiments, a method of forming a layer includes: forming a dielectric layer using a metal precursor expressed by one of R3yM(NR1R2)x-y and M(OR1R2) and using a silicon precursor expressed by HzSi(NR4R5)4-z. Each of “R1”, “R2”, “R3”, “R4”, and “R5” are hydrogen or hydrocarbon; “R3” is different than “R1” and “R2”; “x” is in the range of 3 to 5; “y” is in the range of 1 to 4; “z” is in the range of 2 to 3; and “M” is a metal. The dielectric layer is a metal silicate layer or a metal nitride layer doped with silicon.

Abstract translation: 根据示例性实施例，形成层的方法包括：使用由R yy（NR 1 R 2）x-y和M（OR 1 R 2）之一表示的金属前体形成介电层，并使用由HzSi（NR4R5）4-z表示的硅前体。 “R1”，“R2”，“R3”，“R4”和“R5”分别为氢或烃; “R3”不同于“R1”和“R2”; “x”在3至5的范围内; “y”在1到4的范围内; “z”在2至3的范围内; “M”是金属。 电介质层是掺杂有硅的金属硅酸盐层或金属氮化物层。

公开(公告)号：US09437419B2

公开(公告)日：2016-09-06

申请号：US14173381

申请日：2014-02-05

Applicant: Younsoo Kim ,  Sangyeol Kang ,  Hiroki Sato ,  Tsubasa Shiratori ,  Naoki Yamada ,  Chayoung Yoo ,  Younjoung Cho ,  Chin Moo Cho ,  Jaehyoung Choi

Inventor： Younsoo Kim ,  Sangyeol Kang ,  Hiroki Sato ,  Tsubasa Shiratori ,  Naoki Yamada ,  Chayoung Yoo ,  Younjoung Cho ,  Chin Moo Cho ,  Jaehyoung Choi

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/34 ,  C23C16/455 ,  H01L49/02

CPC classification number: H01L21/0217 ,  C23C16/34 ,  C23C16/401 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/02189 ,  H01L21/02211 ,  H01L21/0228 ,  H01L28/40

Abstract: A trialkylsilane-based silicon precursor compound may be expressed by Si(Ri)X, i=1-3, where each of “R1”, “R2”, and “R3” is a hydrogen or an alkyl having 1-5 carbon(s), all of “R1”, “R2”, and “R3” are not hydrogen, “X” is one of hydrogen, a hydroxyl group, an amide group, an alkoxide group, a halide group, or Si(R*)3, and “R*” is a hydrogen or an alkyl group having 1˜5 carbon(s).

Abstract translation: 三烷基硅烷类硅前体化合物可以由Si（R 1）X，i = 1-3表示，其中“R1”，“R2”和“R3”各自为氢或具有1-5个碳原子的烷基 s），“R1”，“R2”和“R3”全部不为氢，“X”为氢，羟基，酰胺基，醇盐基，卤化物基或Si（R * ）3，“R *”为氢或碳原子数为1〜5的烷基。

公开(公告)号：US09082611B2

公开(公告)日：2015-07-14

申请号：US14189367

申请日：2014-02-25

Applicant: Sukjin Chung ,  JongCheol Lee ,  Younsoo Kim ,  Chayoung Yoo ,  Geunkyu Choi

Inventor： Sukjin Chung ,  JongCheol Lee ,  Younsoo Kim ,  Chayoung Yoo ,  Geunkyu Choi

IPC: H01L21/02

CPC classification number: H01L21/02219 ,  C23C16/45529 ,  H01L21/02159 ,  H01L21/022 ,  H01L21/0228

Abstract: According to example embodiments, a method of forming a layer includes: forming a dielectric layer using a metal precursor expressed by one of R3yM(NR1R2)x-y and M(OR1R2) and using a silicon precursor expressed by HzSi(NR4R5)4-z. Each of “R1”, “R2”, “R3”, “R4”, and “R5” are hydrogen or hydrocarbon; “R3” is different than “R1” and “R2”; “x” is in the range of 3 to 5; “y” is in the range of 1 to 4; “z” is in the range of 2 to 3; and “M” is a metal. The dielectric layer is a metal silicate layer or a metal nitride layer doped with silicon.

Abstract translation: 根据示例性实施例，形成层的方法包括：使用由R yy（NR 1 R 2）x-y和M（OR 1 R 2）之一表示的金属前体形成介电层，并使用由HzSi（NR4R5）4-z表示的硅前体。 “R1”，“R2”，“R3”，“R4”和“R5”分别为氢或烃; “R3”不同于“R1”和“R2”; “x”在3至5的范围内; “y”在1到4的范围内; “z”在2至3的范围内; “M”是金属。 电介质层是掺杂有硅的金属硅酸盐层或金属氮化物层。

公开(公告)号：US20140273512A1

公开(公告)日：2014-09-18

申请号：US14173381

申请日：2014-02-05

Applicant: Younsoo KIM ,  Sangyeol KANG ,  Hiroki SATO ,  Tsubasa SHIRATORI ,  Naoki YAMADA ,  Chayoung YOO ,  Younjoung CHO ,  Chin Moo CHO ,  Jaehyoung CHOI

Inventor： Younsoo KIM ,  Sangyeol KANG ,  Hiroki SATO ,  Tsubasa SHIRATORI ,  Naoki YAMADA ,  Chayoung YOO ,  Younjoung CHO ,  Chin Moo CHO ,  Jaehyoung CHOI

IPC: H01L21/02

CPC classification number: H01L21/0217 ,  C23C16/34 ,  C23C16/401 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/02189 ,  H01L21/02211 ,  H01L21/0228 ,  H01L28/40

Abstract: A trialkylsilane-based silicon precursor compound may be expressed by the following chemical formula 1. In the chemical formula 1, each of “R1”, “R2”, and “R3” is a hydrogen or an alkyl having 1˜5 carbon(s), all of “R1”, “R2”, and “R3” are not hydrogen, “X” is one of hydrogen, a hydroxyl group, an amide group, an alkoxide group, a halide group, or Si(R*)3, and “R*” is a hydrogen or an alkyl group having 1˜5 carbon(s).

Abstract translation: 三烷基硅烷系硅前体化合物可以由以下化学式1表示。在化学式1中，“R1”，“R2”和“R3”各自为氢或碳原子数为1〜5的烷基 ），“R1”，“R2”和“R3”全部不是氢，“X”是氢，羟基，酰胺基，醇盐基，卤化物基或Si（R *）中的一个， 3，“R *”为氢或碳原子数为1〜5的烷基。