公开(公告)号：US5672543A

公开(公告)日：1997-09-30

申请号：US639677

申请日：1996-04-29

Applicant: Chaur Rong Chang ,  Po-Tao Chu ,  Tzu-Min Peng ,  Kuang-Hui Chang

Inventor： Chaur Rong Chang ,  Po-Tao Chu ,  Tzu-Min Peng ,  Kuang-Hui Chang

IPC: H01L21/768 ,  H01L21/28

CPC classification number: H01L21/76843 ,  H01L21/76877 ,  Y10S438/937

Abstract: A new method of metallization using a tungsten plug is described. Semiconductor device structures are provided in and on a semiconductor substrate. An insulating layer covers the semiconductor device structures wherein a contact opening is made through the insulating layer to the semiconductor substrate. A barrier layer is deposited conformally over the surface of the insulating layer and within the contact opening. A stress buffer layer is deposited overlying the barrier layer wherein the stress buffer layer prevents volcano defects. A tungsten plug is formed within the contact opening to complete the formation of the tungsten plug metallization without volcano defects in the fabrication of an integrated circuit device.

Abstract translation: 描述了使用钨丝塞的新的金属化方法。 半导体器件结构设置在半导体衬底中和半导体衬底上。 绝缘层覆盖其中通过绝缘层到半导体衬底的接触开口的半导体器件结构。 保护层在绝缘层的表面和接触开口内共形沉积。 沉积在阻挡层上的应力缓冲层，其中应力缓冲层防止火山缺陷。 在接触开口中形成钨插塞，以在集成电路器件的制造中完成钨插塞金属化的形成而没有火山缺陷。