公开(公告)号：US11726406B2

公开(公告)日：2023-08-15

申请号：US17718648

申请日：2022-04-12

Applicant: Sunghwan Kim ,  Ho-Young Kim ,  Seok Heo ,  Dongwook Kim ,  Sungjin Kim ,  Chaehung Lim ,  Jaekyung Park ,  Jae Hong Lee ,  Junyoung Lee

Inventor： Sunghwan Kim ,  Ho-Young Kim ,  Seok Heo ,  Dongwook Kim ,  Sungjin Kim ,  Chaehung Lim ,  Jaekyung Park ,  Jae Hong Lee ,  Junyoung Lee

IPC: G03F7/16 ,  G03F7/20

CPC classification number: G03F7/162 ,  G03F7/168 ,  G03F7/2028

Abstract: In a method of coating a photoresist, the photoresist may be provided to an upper surface of a rotating wafer. A hovering solution may be injected to an edge portion of the photoresist under a condition that the hovering solution may be hovered with respect to the edge portion of the photoresist with an air layer being interposed between the hovering solution and the edge portion of the photoresist to limit and/or prevent a bead of the photoresist from being formed on an edge portion of the upper surface of the wafer. Thus, the photoresist having a uniform thickness may be coated on the upper surface of the wafer to improve a yield of a semiconductor device by increasing an effective area of the edge portion of the wafer.

公开(公告)号：US20230119739A1

公开(公告)日：2023-04-20

申请号：US17718648

申请日：2022-04-12

Applicant: Sunghwan KIM ,  Ho-Young KIM ,  Seok HEO ,  Dongwook KIM ,  Sungjin KIM ,  Chaehung LIM ,  Jaekyung PARK ,  Jae Hong LEE ,  Junyoung LEE

Inventor： Sunghwan KIM ,  Ho-Young KIM ,  Seok HEO ,  Dongwook KIM ,  Sungjin KIM ,  Chaehung LIM ,  Jaekyung PARK ,  Jae Hong LEE ,  Junyoung LEE

IPC: G03F7/16 ,  G03F7/20

Abstract: In a method of coating a photoresist, the photoresist may be provided to an upper surface of a rotating wafer. A hovering solution may be injected to an edge portion of the photoresist under a condition that the hovering solution may be hovered with respect to the edge portion of the photoresist with an air layer being interposed between the hovering solution and the edge portion of the photoresist to limit and/or prevent a bead of the photoresist from being formed on an edge portion of the upper surface of the wafer. Thus, the photoresist having a uniform thickness may be coated on the upper surface of the wafer to improve a yield of a semiconductor device by increasing an effective area of the edge portion of the wafer.