公开(公告)号：US20060257126A1

公开(公告)日：2006-11-16

申请号：US11130380

申请日：2005-05-16

申请人： Wen-Long Chyn ,  Ching-Yi Lee

发明人： Wen-Long Chyn ,  Ching-Yi Lee

IPC分类号： F24H3/02

CPC分类号： F24H3/0417 ,  F04D29/582 ,  F04D29/5826 ,  F04D29/703

摘要： A cooling/heating fan apparatus includes a protective shade, a fan motor having a propeller shaft extended into the protective shade, an impeller mounted on a distal end of the propeller shaft, at least one porous ceramic carrier mounted on the propeller shaft and located between the fan motor and the impeller, wherein the porous ceramic carrier has a plurality of through holes each having a surface provided with an electro-thermal plating film layer. Thus, the air from the ambient environment is heated by the electro-thermal plating film layer quickly, thereby enhancing the heating efficiency of the fan apparatus.

摘要翻译： 冷却/加热风扇装置包括保护罩，具有延伸到保护罩中的传动轴的风扇马达，安装在传动轴远端的叶轮，安装在传动轴上的至少一个多孔陶瓷载体， 风扇电动机和叶轮，其中多孔陶瓷载体具有多个通孔，每个通孔具有设置有电热镀膜层的表面。 因此，来自周围环境的空气被电热膜层快速加热，从而提高了风扇装置的加热效率。

公开(公告)号：US20060199375A1

公开(公告)日：2006-09-07

申请号：US11307006

申请日：2006-01-19

申请人： Shun-Li Lin ,  Yun-Chu Lin ,  Wen-Chung Chang ,  Ching-Yi Lee

发明人： Shun-Li Lin ,  Yun-Chu Lin ,  Wen-Chung Chang ,  Ching-Yi Lee

IPC分类号： G03F1/00 ,  H01L21/4763

CPC分类号： H01L21/0276 ,  H01L21/31144 ,  H01L21/76802

摘要： A structure applied to a photolithographic process is provided. The structure includes at least a film layer, an optical isolation layer, an anti-reflection coating and a photoresist layer sequentially formed over a substrate. In the photolithographic process, the optical isolation layer stops light from penetrating down to the film layer. Since the optical isolation layer is set up underneath the photoresist layer, light emitted from a light source during photo-exposure is prevented from reflecting from the substrate surface after passing through the film layer. Thus, the critical dimensions of the photolithographic process are unaffected by any change in the thickness of the film layer.

摘要翻译： 提供了应用于光刻工艺的结构。 该结构至少包括在衬底上顺序形成的膜层，光隔离层，抗反射涂层和光刻胶层。 在光刻工艺中，光隔离层阻止光穿透到膜层。 由于光隔离层被设置在光致抗蚀剂层的下方，因此防止了在曝光期间从光源发出的光在通过膜层之后从基板表面反射。 因此，光刻工艺的临界尺寸不受膜层厚度的任何变化的影响。

公开(公告)号：US07683487B2

公开(公告)日：2010-03-23

申请号：US11307006

申请日：2006-01-19

申请人： Shun-Li Lin ,  Yun-Chu Lin ,  Wen-Chung Chang ,  Ching-Yi Lee

发明人： Shun-Li Lin ,  Yun-Chu Lin ,  Wen-Chung Chang ,  Ching-Yi Lee

IPC分类号： H01L23/48

CPC分类号： H01L21/0276 ,  H01L21/31144 ,  H01L21/76802

摘要： A structure applied to a photolithographic process is provided. The structure includes at least a film layer, an optical isolation layer, an anti-reflection coating and a photoresist layer sequentially formed over a substrate. In the photolithographic process, the optical isolation layer stops light from penetrating down to the film layer. Since the optical isolation layer is set up underneath the photoresist layer, light emitted from a light source during photo-exposure is prevented from reflecting from the substrate surface after passing through the film layer. Thus, the critical dimensions of the photolithographic process are unaffected by any change in the thickness of the film layer.

摘要翻译： 提供了应用于光刻工艺的结构。 该结构至少包括在衬底上顺序形成的膜层，光隔离层，抗反射涂层和光刻胶层。 在光刻工艺中，光隔离层阻止光穿透到膜层。 由于光隔离层被设置在光致抗蚀剂层的下方，因此防止了在曝光期间从光源发出的光在通过膜层之后从基板表面反射。 因此，光刻工艺的临界尺寸不受膜层厚度的任何变化的影响。

公开(公告)号：US20070031132A1

公开(公告)日：2007-02-08

申请号：US11179946

申请日：2005-07-12

申请人： Ching-Yi Lee

发明人： Ching-Yi Lee

IPC分类号： F24H3/02

CPC分类号： F24H3/0411 ,  F24H9/1872 ,  H05B3/008 ,  H05B3/141 ,  H05B2203/032

摘要： A porous ceramic carrier includes at least one substrate integrally formed with a functional far infrared material and having an inside formed with a plurality of through holes, and an electrothermal film layer coated on a surface of each of the through holes of the substrate. Thus, the porous ceramic carrier has a rapid heat circulation effect by provision of the electrothermal film layer, thereby enhancing the heat circulation efficiency of the porous ceramic carrier.

摘要翻译： 多孔陶瓷载体包括至少一个与功能性远红外材料整体形成并具有形成有多个通孔的内部的基板和涂覆在基板的每个通孔的表面上的电热膜层。 因此，通过提供电热膜层，多孔陶瓷载体具有快速的热循环效果，从而提高多孔陶瓷载体的热循环效率。

公开(公告)号：US20050148166A1

公开(公告)日：2005-07-07

申请号：US10707632

申请日：2003-12-26

申请人： SHUN-LI LIN ,  YUN CHU LIN ,  WEN CHUNG CHANG ,  CHING YI LEE

发明人： SHUN-LI LIN ,  YUN CHU LIN ,  WEN CHUNG CHANG ,  CHING YI LEE

IPC分类号： H01L21/027 ,  H01L21/311 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/0276 ,  H01L21/31144 ,  H01L21/76802

摘要： A structure applied to a photolithographic process is provided. The structure comprises at least a film layer, an optical isolation layer, an anti-reflection coating and a photoresist layer sequentially formed over a substrate. In the photolithographic process, the optical isolation layer stops light from penetrating down to the film layer. Since the optical isolation layer is set up underneath the photoresist layer, light emitted from a light source during photo-exposure is prevented from reflecting from the substrate surface after passing through the film layer. Thus, the critical dimensions of the photolithographic process are unaffected by any change in the thickness of the film layer.

摘要翻译： 提供了应用于光刻工艺的结构。 该结构至少包括在衬底上顺序形成的膜层，光学隔离层，抗反射涂层和光致抗蚀剂层。 在光刻工艺中，光隔离层阻止光穿透到膜层。 由于光隔离层被设置在光致抗蚀剂层的下方，因此防止了在曝光期间从光源发出的光在通过膜层之后从基板表面反射。 因此，光刻工艺的临界尺寸不受膜层厚度的任何变化的影响。

公开(公告)号：US07008870B2

公开(公告)日：2006-03-07

申请号：US10707632

申请日：2003-12-26

申请人： Shun-Li Lin ,  Yun Chu Lin ,  Wen Chung Chang ,  Ching Yi Lee

发明人： Shun-Li Lin ,  Yun Chu Lin ,  Wen Chung Chang ,  Ching Yi Lee

IPC分类号： H01L21/4763

CPC分类号： H01L21/0276 ,  H01L21/31144 ,  H01L21/76802

摘要： A structure applied to a photolithographic process is provided. The structure comprises at least a film layer, an optical isolation layer, an anti-reflection coating and a photoresist layer sequentially formed over a substrate. In the photolithographic process, the optical isolation layer stops light from penetrating down to the film layer. Since the optical isolation layer is set up underneath the photoresist layer, light emitted from a light source during photo-exposure is prevented from reflecting from the substrate surface after passing through the film layer. Thus, the critical dimensions of the photolithographic process are unaffected by any change in the thickness of the film layer.

摘要翻译： 提供了应用于光刻工艺的结构。 该结构至少包括在衬底上顺序形成的膜层，光学隔离层，抗反射涂层和光致抗蚀剂层。 在光刻工艺中，光隔离层阻止光穿透到膜层。 由于光隔离层被设置在光致抗蚀剂层的下方，因此防止了在曝光期间从光源发出的光在通过膜层之后从基板表面反射。 因此，光刻工艺的临界尺寸不受膜层厚度的任何变化的影响。