公开(公告)号：US08867286B2

公开(公告)日：2014-10-21

申请号：US13533977

申请日：2012-06-27

申请人： Ming-Hsueh Wu ,  Kun-Lun Luo ,  Chen-An Chen ,  Yee-Wen Chen

发明人： Ming-Hsueh Wu ,  Kun-Lun Luo ,  Chen-An Chen ,  Yee-Wen Chen

IPC分类号： G11C7/00

CPC分类号： G11C29/802 ,  G11C5/04

摘要： A repairable multi-layer memory chip stack wherein each of the memory chips of the chip stack includes a control unit, a decoding unit, a memory array module and a redundant repair unit comprising at least one redundant repair element. The decoding unit receives a memory address from an address bus, and correspondingly outputs a decoded address. The memory array module determines whether to allow a data bus to access the data of the memory array module corresponding to a decoded address in accordance with an activation signal of the control unit. The redundant repair element includes a valid field, a chip ID field, a faulty address field and a redundant memory. When the valid field is valid, the value of the chip ID field matches the ID code, and the value of the faulty address field matches the decoded address, the redundant memory is coupled to the data bus.

摘要翻译： 一种可修复的多层存储器芯片堆栈，其中芯片堆叠的每个存储器芯片包括控制单元，解码单元，存储器阵列模块和包括至少一个冗余修复元件的冗余修复单元。 解码单元从地址总线接收存储器地址，并且相应地输出解码的地址。 存储器阵列模块根据控制单元的激活信号确定是否允许数据总线访问对应于解码地址的存储器阵列模块的数据。 冗余修复元件包括有效字段，芯片ID字段，故障地址字段和冗余存储器。 当有效字段有效时，芯片ID字段的值与ID码匹配，故障地址字段的值与解码的地址匹配，冗余存储器与数据总线相连。

公开(公告)号：US20130155794A1

公开(公告)日：2013-06-20

申请号：US13533977

申请日：2012-06-27

申请人： Ming-Hsueh Wu ,  Kun-Lun Luo ,  Chen-An Chen ,  Yee-Wen Chen

发明人： Ming-Hsueh Wu ,  Kun-Lun Luo ,  Chen-An Chen ,  Yee-Wen Chen

IPC分类号： G11C29/00

CPC分类号： G11C29/802 ,  G11C5/04

摘要： A repairable multi-layer memory chip stack is provided. Each of the memory chips of the chip stack includes a control unit, a decoding unit, a memory array module and a redundant repair unit comprising at least one redundant repair element. The decoding unit receives a memory address from an address bus, and correspondingly outputs a decoded address. The memory array module determines whether to allow a data bus to access the data of the memory array module corresponding to a decoded address in accordance with an activation signal of the control unit. The redundant repair element includes a valid field, a chip ID field, a faulty address field and a redundant memory. When the valid field is valid, the value of the chip ID field matches the ID code, and the value of the faulty address field matches the decoded address, the redundant memory is coupled to the data bus.

摘要翻译： 提供可修复的多层存储器芯片堆叠。 芯片堆叠的每个存储器芯片包括控制单元，解码单元，存储器阵列模块和包括至少一个冗余修复元件的冗余修复单元。 解码单元从地址总线接收存储器地址，并且相应地输出解码的地址。 存储器阵列模块根据控制单元的激活信号确定是否允许数据总线访问对应于解码地址的存储器阵列模块的数据。 冗余修复元件包括有效字段，芯片ID字段，故障地址字段和冗余存储器。 当有效字段有效时，芯片ID字段的值与ID码匹配，故障地址字段的值与解码的地址匹配，冗余存储器与数据总线相连。

公开(公告)号：US08317987B2

公开(公告)日：2012-11-27

申请号：US12889219

申请日：2010-09-23

申请人： Emmanuel Chua Abas ,  Chen-An Chen ,  Diana Xiaobing Ma ,  Kalyana Bhargava Ganti

发明人： Emmanuel Chua Abas ,  Chen-An Chen ,  Diana Xiaobing Ma ,  Kalyana Bhargava Ganti

IPC分类号： C25B9/02

CPC分类号： C25D17/08 ,  C25D17/001 ,  C25D17/005 ,  C25D17/007 ,  C25D17/10 ,  Y10T156/10 ,  Y10T156/1057

摘要： One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The substrate carrier comprises a non-conductive carrier body on which the substrates are to be held. Electrically-conductive lines are embedded within the carrier body, and a plurality of contact clips are coupled to the electrically-conductive lines embedded within the carrier body. The contact clips hold the substrates in place and electrically couple the substrates to the electrically-conductive lines. The non-conductive carrier body is continuous so as to be impermeable to flow of electroplating solution through the non-conductive carrier body. Other embodiments, aspects and features are also disclosed.

摘要翻译： 一个实施例涉及用于电镀多个基板的基板载体。 衬底载体包括其上将保持衬底的非导电载体。 导电线嵌入载体主体内，并且多个接触夹被耦合到嵌入载体主体内的导电线。 接触夹将基板固定在适当位置，并将基板电耦合到导电线。 非导电载体主体是连续的，以便不可渗透通过非导电载体的电镀溶液流动。 还公开了其它实施例，方面和特征。

公开(公告)号：US08221601B2

公开(公告)日：2012-07-17

申请号：US12889232

申请日：2010-09-23

申请人： Chen-An Chen ,  Emmanuel Chua Abas ,  Edmundo Anida Divino ,  Jake Randal G. Ermita ,  Jose Francisco S. Capulong ,  Arnold Villamor Castillo ,  Diana Xiaobing Ma

发明人： Chen-An Chen ,  Emmanuel Chua Abas ,  Edmundo Anida Divino ,  Jake Randal G. Ermita ,  Jose Francisco S. Capulong ,  Arnold Villamor Castillo ,  Diana Xiaobing Ma

IPC分类号： C25D17/08 ,  C25D17/06 ,  C25B9/02 ,  C25B9/04

CPC分类号： C25D17/005 ,  C25D17/001 ,  C25D17/004 ,  C25D17/08 ,  C25D17/10 ,  H05K3/0097 ,  H05K2203/0169 ,  H05K2203/0723

摘要： One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The carrier includes a non-conductive carrier body on which the substrates are placed and conductive lines embedded within the carrier body. A plurality of conductive clip attachment parts are attached in a permanent manner to the conductive lines embedded within the carrier body. A plurality of contact clips are attached in a removable manner to the clip attachment parts. The contact clips hold the substrates in place and conductively connecting the substrates with the conductive lines. Other embodiments, aspects and features are also disclosed.

公开(公告)号：US20050083048A1

公开(公告)日：2005-04-21

申请号：US10970351

申请日：2004-10-21

申请人： Lawrence Lei ,  Chen-An Chen

发明人： Lawrence Lei ,  Chen-An Chen

IPC分类号： B44C1/22 ,  C25D7/12 ,  C25D17/00 ,  C25D21/12 ,  G01B7/06 ,  H01L21/00

CPC分类号： G01B7/105 ,  C25D7/123 ,  C25D17/00 ,  C25D21/12 ,  H01L21/67253

摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, and at least one substrate inspection station positioned on either the mainframe or in the loading station. The inspection station is generally configured to use an eddy current sensing device to determine the thickness of a conductive layer on the substrate.

摘要翻译： 本发明的实施方案通常提供电化学电镀系统。 电镀系统包括定位成与主机处理平台连通的基板装载站，位于主机上的至少一个基板镀覆单元以及位于大型机或装载站中的至少一个基板检查站。 检查站通常被配置为使用涡流检测装置来确定衬底上的导电层的厚度。

公开(公告)号：US06709721B2

公开(公告)日：2004-03-23

申请号：US09820586

申请日：2001-03-28

申请人： Juan Carlos Rocha-Alvarez ,  Chen-An Chen ,  Ellie Yieh ,  Shankar Venkataraman

发明人： Juan Carlos Rocha-Alvarez ,  Chen-An Chen ,  Ellie Yieh ,  Shankar Venkataraman

IPC分类号： C23C1640

CPC分类号： C23C16/45521 ,  C23C16/401 ,  C23C16/455 ,  C23C16/4585 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31633 ,  Y10T428/31

摘要： The present invention provides a method of depositing a carbon doped silicon oxide film having a low dielectric constant (k). A process gas mixture containing at least a carrier gas, an oxidizer, a carbon gas source, or combinations thereof, is supplied adjacent an edge of a substrate though a purge gas inlet in a substrate support to facilitate deposition of low k carbon doped silicon oxide film having a greater concentration of silicon oxide around the edge of the substrate than an inner portion of the substrate.

摘要翻译： 本发明提供一种沉积具有低介电常数（k）的碳掺杂氧化硅膜的方法。 含有至少载体气体，氧化剂，碳气体源或其组合的工艺气体混合物通过衬底支撑件中的吹扫气体入口邻近衬底的边缘提供，以便于沉积低k碳掺杂氧化硅 膜比衬底的内部具有比衬底边缘更高浓度的氧化硅。

公开(公告)号：US06596343B1

公开(公告)日：2003-07-22

申请号：US09557079

申请日：2000-04-21

申请人： Himanshu Pokharna ,  Shankar Chandran ,  Srinivas D. Nemani ,  Chen-an Chen ,  Francimar Campana ,  Ellie Yieh ,  Li-Qun Xia

发明人： Himanshu Pokharna ,  Shankar Chandran ,  Srinivas D. Nemani ,  Chen-an Chen ,  Francimar Campana ,  Ellie Yieh ,  Li-Qun Xia

IPC分类号： C23C1600

CPC分类号： C30B29/06 ,  C23C16/40 ,  C23C16/452 ,  C30B25/02

摘要： A method for processing semiconductor substrates by reacting hydroxyl radicals with a precursor to cause the precursor to decompose and form a film which deposits on a substrate. Hydroxyl radicals, which are produced in a hydroxyl-ion producing apparatus outside of a chemical vapor deposition reactor, are mixed with a precursor to form a hydroxyl ions-precursor mixture. The hydroxyl ions-precursor mixture is introduced into the chemical vapor deposition reactor.

摘要翻译： 一种用于通过使羟基自由基与前体反应以使前体分解并形成沉积在基底上的膜来处理半导体衬底的方法。 在化学气相沉积反应器外部的羟基离子产生装置中生产的羟基与前体混合以形成羟基离子前体混合物。 将羟基离子前体混合物引入化学气相沉积反应器。

公开(公告)号：US06346481B1

公开(公告)日：2002-02-12

申请号：US09637839

申请日：2000-08-12

申请人： Won Bang ,  Chen-An Chen

发明人： Won Bang ,  Chen-An Chen

IPC分类号： H01L21311

CPC分类号： H01J37/32431 ,  C23C16/4404 ,  C23C16/46 ,  H01J2237/2001

摘要： Provided herein is a method of depositing a film on a substrate in a high temperature chemical vapor deposition (CVD) reactor, comprising the steps of polishing sharp corner(s) of the surface of a heater, wherein the heater provides heat to the substrate for deposition; coating the polished heater surface with a coating material; and depositing a film on the substrate in the CVD reactor, wherein the substrate is heated through the coated polished heater. Such method of polishing may also be used for reducing pitting of a coated heater and protecting the heater from corrosive environment in a CVD reactor.

摘要翻译： 本文提供了一种在高温化学气相沉积（CVD）反应器中在衬底上沉积膜的方法，包括以下步骤：抛光加热器表面的尖锐角，其中加热器向衬底提供热量，用于 沉积 用涂料涂覆抛光的加热器表面; 以及在所述CVD反应器中在所述衬底上沉积膜，其中所述衬底通过涂覆的抛光加热器被加热。 这种抛光方法也可用于减少涂覆的加热器的点蚀并且保护加热器免受CVD反应器中的腐蚀环境的影响。

公开(公告)号：US06303501B1

公开(公告)日：2001-10-16

申请号：US09550448

申请日：2000-04-17

申请人： Chen-An Chen ,  Koji Nakanishi ,  Aihua Chen

发明人： Chen-An Chen ,  Koji Nakanishi ,  Aihua Chen

IPC分类号： H01L2144

CPC分类号： C23C16/45512 ,  C23C16/08 ,  C23C16/455 ,  H01L21/28556 ,  H01L21/67017 ,  Y10T137/0329 ,  Y10T137/2499 ,  Y10T137/87692

摘要： The present invention provides apparatus, systems, and methods related to the manufacture of integrated circuits. Specifically, embodiments of the present invention include apparatus designed to provide thorough and reliable fluid mixture for gases used in a semiconductor processing system. In one embodiment of the invention, the gas mixing apparatus comprises a gas mixer housing having a gas inlet, a fluid flow channel, and a gas outlet. The fluid flow channel is fluidly coupled to a plurality of gas sources. The majority of the gas mixture occurs in the fluid flow channel which comprises one or more fluid separators for separating the gas into two or more gas portions and one or more fluid collectors for allowing the gas portions to collide with each other to mix the gas portions. This separation and collection of the gas portions results in a thoroughly mixed gas.

摘要翻译： 本发明提供了与集成电路的制造相关的装置，系统和方法。 具体地，本发明的实施例包括设计成为半导体处理系统中使用的气体提供彻底且可靠的流体混合物的装置。 在本发明的一个实施例中，气体混合装置包括具有气体入口，流体流动通道和气体出口的气体混合器壳体。 流体流动通道流体耦合到多个气体源。 大部分气体混合物发生在流体流动通道中，流体流动通道包括一个或多个流体分离器，用于将气体分离成两个或更多个气体部分和一个或多个流体收集器，用于允许气体部分相互碰撞以混合气体部分 。 气体部分的分离和收集导致充分混合的气体。

公开(公告)号：US06267820B1

公开(公告)日：2001-07-31

申请号：US09248789

申请日：1999-02-12

申请人： Chen-An Chen ,  Won Bang

发明人： Chen-An Chen ,  Won Bang

IPC分类号： C23C1600

CPC分类号： C23C16/4485 ,  C23C16/4407 ,  Y10T137/0391 ,  Y10T137/87676

摘要： An injection valve is provided with vibration to dislodge residue therefrom and to thus avoid injection valve clogging. A wave generator which preferably generates an ultrasonic sine wave, is operatively coupled to the vaporization region of the injection valve (i.e., via the injection block, via a piezoelectric valve controller, etc.). The wave may be applied to the injection valve whenever vaporization takes place, in which case a removable trap is coupled between the injection valve and the processing chamber. Alternatively, the sonic wave may be applied to the injection valve only in conjunction with a chamber cleaning process.

摘要翻译： 喷射阀具有振动以从其中排出残留物，从而避免喷射阀堵塞。 优选地产生超声正弦波的波发生器可操作地耦合到喷射阀的蒸发区域（即，经由喷射块，经由压电阀控制器等）。 每当发生气化时，波浪都可以施加到喷射阀，在这种情况下，可拆卸的捕集器连接在喷射阀和处理室之间。 或者，声波可以仅与室清洁过程一起施加到喷射阀。