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    Micromechanical piezoelectric device
    1.
    发明申请
    Micromechanical piezoelectric device 有权
    微机电压电装置

    公开(公告)号：US20030119220A1

    公开(公告)日：2003-06-26

    申请号：US10284048

    申请日：2002-10-29

    申请人： Boston MicroSystems, Inc.

    发明人： Richard Mlcak ,  Dharanipal Doppalapudi ,  Harry L. Tuller

    IPC分类号： H01L021/00

    CPC分类号： B81B3/0089 ,  B81B3/0094 ,  B81B2201/06 ,  B81B2203/0127 ,  H01L41/094 ,  H01L41/18 ,  H01L41/316 ,  H01L41/331 ,  H01L41/332

    摘要： A micromechanical device includes a single crystal micromachined micromechanical structure. At least a portion of the micromechanical structure is capable of performing a mechanical motion. A piezoelectric epitaxial layer covers at least a part of said portion of the micromechanical structure that is capable of performing a mechanical motion. The micromechanical structure and piezoelectric epitaxial layer are composed of different materials. At least one electrically conducting layer is formed to cover at least part of the piezoelectric epitaxial layer.

    摘要翻译： 微机械装置包括单晶微加工微机械结构。 微机械结构的至少一部分能够执行机械运动。 压电外延层覆盖能够执行机械运动的微机械结构的所述部分的至少一部分。 微机械结构和压电外延层由不同的材料组成。 形成至少一个导电层以覆盖至少部分压电外延层。

    ELECTROCHEMICAL ETCHING PROCESS
    2.
    发明申请
    ELECTROCHEMICAL ETCHING PROCESS 失效
    电化学蚀刻工艺

    公开(公告)号：US20020137348A1

    公开(公告)日：2002-09-26

    申请号：US09817729

    申请日：2001-03-26

    申请人： Boston MicroSystems, Inc.

    发明人： Richard Mlcak

    IPC分类号： H01L021/311

    CPC分类号： H01L21/3063

    摘要： A method of electrochemically etching a device, including forming a semiconductor substrate having a p-type semiconductor region on an n-type semiconductor region. A discrete semiconductor region is formed on the p-type semiconductor region and is isolated from the n-type semiconductor region. The n-type semiconductor region is exposed to an electrolyte with an electrical bias applied between the n-type semiconductor region and the electrolyte. The n-type semiconductor region is also exposed to radiation having energy sufficient to excite electron-hole pairs. In addition, a p-n junction reverse bias is applied between the p-type semiconductor region and the n-type semiconductor region to prevent the p-type semiconductor region and the discrete semiconductor region from etching while portions of the n-type semiconductor region exposed to the electrolyte and the radiation are etched.

    摘要翻译： 一种电化学蚀刻器件的方法，包括在n型半导体区域上形成具有p型半导体区域的半导体衬底。 离散半导体区域形成在p型半导体区域上并与n型半导体区域隔离。 n型半导体区域暴露于在n型半导体区域和电解质之间施加电偏压的电解质。 n型半导体区域也暴露于具有足以激发电子 - 空穴对的能量的辐射。 此外，在p型半导体区域和n型半导体区域之间施加pn结反向偏压，以防止p型半导体区域和离散半导体区域被蚀刻，同时n型半导体区域的部分暴露于 电解质和辐射被蚀刻。

    P-N JUNCTION SENSOR
    4.
    发明申请
    P-N JUNCTION SENSOR 有权
    P-N连接传感器

    公开(公告)号：US20030193073A1

    公开(公告)日：2003-10-16

    申请号：US10123900

    申请日：2002-04-16

    申请人： Boston MicroSystems, Inc.

    发明人： Harry L. Tuller ,  Richard Mlcak

    IPC分类号： H01L029/76

    CPC分类号： G01N27/12

    摘要： A sensor including a p-n junction for subjecting under a reverse electrical bias. A conductive layer is formed across the p-n junction for providing an alternative conductive path across the p-n junction. The conductivity of the conductive layer in the presence of a selected substance in an atmosphere is different than in the absence of the selected substance, wherein the conductivity of the conductive layer is indicative of the presence or absence of the selected substance.

    摘要翻译： 一种传感器，包括用于在反向电偏压下进行的p-n结。 导电层跨越p-n结形成，以提供穿过p-n结的替代导电路径。 在选择的物质存在下，导电层在大气中的电导率不同于不存在所选物质的导电层，其中导电层的导电性指示所选物质的存在或不存在。