公开(公告)号：US20130147560A1

公开(公告)日：2013-06-13

申请号：US13408414

申请日：2012-02-29

申请人： Wei-Hsien CHEN ,  Kuei-Cheng Lin ,  Bing-Song Chen ,  Chien-Chih Lin

发明人： Wei-Hsien CHEN ,  Kuei-Cheng Lin ,  Bing-Song Chen ,  Chien-Chih Lin

IPC分类号： H03F3/45

CPC分类号： H03F3/45475 ,  H03F1/26 ,  H03F2203/45514 ,  H03F2203/45518 ,  H03F2203/45521 ,  H03F2203/45544

摘要： A low noise amplifier with back-to-back connected diodes and a back-to-back connected diode with high impedance thereof are provided. The low noise amplifier includes a first operational amplifier (OP) and at least two first back-to-back connected diodes. The back-to-back connected diode with high impedance is formed from at least one MOS FET operated within a cut-off region. The first back-to-back connected diodes are connected electrically between the first input end and the first output end, and between the second input end and the second output end, of the first OP respectively. By the implementation of the present invention, the low noise amplifier is not only low noise, but also with low energy consumption, high stability, low circuitry complexity, and easily controlled manufacturing process.

摘要翻译： 提供了具有背对背连接的二极管和具有高阻抗的背对背连接二极管的低噪声放大器。 低噪声放大器包括第一运算放大器（OP）和至少两个第一背对背连接的二极管。 具有高阻抗的背对背连接的二极管由在截止区域内操作的至少一个MOS FET形成。 第一背对背连接的二极管分别在第一输入端和第一输出端之间以及第二输入端和第二输出端之间电连接。 通过实施本发明，低噪声放大器不仅具有低噪声，而且具有低能耗，高稳定性，低电路复杂性和容易控制的制造工艺。