公开(公告)号：US06594414B2

公开(公告)日：2003-07-15

申请号：US09911492

申请日：2001-07-25

申请人： Aroon Tungare ,  Keryn Lian ,  Robert Lempkowski ,  Barbara Foley Barenburg

发明人： Aroon Tungare ,  Keryn Lian ,  Robert Lempkowski ,  Barbara Foley Barenburg

IPC分类号： G02B626

CPC分类号： G02B6/3518 ,  G02B6/3578 ,  G02B6/3598 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521

摘要： A structure for an optical switch includes a reflective layer formed over a high quality epitaxial layer of piezoelectric compound semiconductor materials grown over a monocrystalline substrate, such as a silicon wafer. The piezoelectric layer can be activated to alter the path of light incident on the reflective layer. A compliant substrate is provided for growing the monocrystalline compound semiconductor layer. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying piezoelectric monocrystalline material layer.

摘要翻译： 光开关的结构包括在单晶衬底（例如硅晶片）上生长的压电化合物半导体材料的高质量外延层上形成的反射层。 可以激活压电层以改变入射在反射层上的光的路径。 提供了用于生长单晶化合物半导体层的柔性衬底。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的压电单晶材料层晶格匹配。

公开(公告)号：US06605454B2

公开(公告)日：2003-08-12

申请号：US09816512

申请日：2001-03-22

申请人： Barbara Foley Barenburg ,  Jeremy Burdon ,  Yuk-Tong Chan ,  Xunhu Dai ,  Sean Gallagher ,  Piotr Grodzinski ,  Robert Marrero ,  Vijay Nair ,  David Rhine ,  Thomas Smekal

发明人： Barbara Foley Barenburg ,  Jeremy Burdon ,  Yuk-Tong Chan ,  Xunhu Dai ,  Sean Gallagher ,  Piotr Grodzinski ,  Robert Marrero ,  Vijay Nair ,  David Rhine ,  Thomas Smekal

IPC分类号： C12N1300

CPC分类号： H05B6/806 ,  C12N1/066 ,  C12N13/00

摘要： A microwave device has a monolithic microwave integrated circuit (MMIC) disposed therein for applying microwave radiation to a microfluidic structure, such as a chamber, defined in the device. The microwave radiation from the MMIC is useful for heating samples introduced into the microfluidic structure and for effecting lysis of cells in the samples. Microfabrication techniques allow the fabrication of MMICs that perform heating and cell lysing of samples having volumes in the microliter to picoliter range.

公开(公告)号：US06965128B2

公开(公告)日：2005-11-15

申请号：US10356549

申请日：2003-02-03

申请人： Paige M. Holm ,  Barbara Foley Barenburg ,  Joyce K. Yamamoto ,  Fred V. Richard

发明人： Paige M. Holm ,  Barbara Foley Barenburg ,  Joyce K. Yamamoto ,  Fred V. Richard

IPC分类号： H01L21/8258 ,  H01L27/01 ,  H01L27/06 ,  H01L33/00

CPC分类号： H01L27/0605 ,  H01L21/8258

摘要： High quality epitaxial layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy and epitaxial growth of single crystal silicon onto single crystal oxide materials. A microresonator device is formed overlying the monocrystalline substrate. Portions or an entirety of the microresonator device can also overly the accommodating buffer layer, or the monocrystalline material layer.

摘要翻译： 通过形成用于生长单晶层的顺应性衬底，可以将单晶材料（26）的高质量外延层生长成覆盖在单晶衬底（22）如大硅晶片上。 容纳缓冲层（24）包括通过氧化硅的非晶界面层（28）与硅晶片隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的单晶硅在单晶氧化物材料上的外延和外延生长。 在单晶衬底上形成微谐振器器件。 部分或整个微谐振器装置也可以过度地容纳缓冲层或单晶材料层。