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公开(公告)号：US07836420B2
公开(公告)日：2010-11-16
申请号：US11876663
申请日：2007-10-22
Applicant: Sia Kim Tan , Qunying Lin , Andrew Khoh
Inventor： Sia Kim Tan , Qunying Lin , Andrew Khoh
CPC classification number: H01L27/0203 , G03F1/36 , G03F1/70 , G03F7/70425 , G03F7/70433
Abstract: An integrated circuit system comprising: providing a substrate; forming a main feature using a first non-cross-junction assist feature over the substrate; forming the main feature using a second non-cross-junction assist feature, adjacent a location of the first non-cross-junction feature, over the substrate; and forming an integrated circuit having the substrate with the main feature thereover.
Abstract translation: 一种集成电路系统，包括：提供衬底; 在衬底上形成使用第一非交叉接合辅助特征的主要特征; 使用邻近所述第一非交叉连接特征的位置的第二非交叉点辅助特征在所述衬底上形成所述主要特征; 以及形成具有其主要特征的基板的集成电路。
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公开(公告)号：US20060206852A1
公开(公告)日：2006-09-14
申请号：US11078820
申请日：2005-03-10
Applicant: Andrew Khoh , Byong-Il Choi , Lap Chan , Ganesh Samudra , Yihong Wu
Inventor： Andrew Khoh , Byong-Il Choi , Lap Chan , Ganesh Samudra , Yihong Wu
IPC: G06F17/50
CPC classification number: G03F1/36
Abstract: A trial semiconductor photomask design having discontinuity points is provided, and each of the discontinuity points is treated as simulated light sources. Simulated light from each of the simulated light sources is focused, and a composite image intensity of the focused simulated light is calculated to verify the trial semiconductor photomask design. The trial semiconductor photomask design is sharpened. A photomask design specification is generated for use in fabricating such a photomask.
Abstract translation: 提供具有不连续点的试验半导体光掩模设计，将每个不连续点视为模拟光源。 聚焦每个模拟光源的模拟光，并计算聚焦模拟光的合成图像强度，以验证试验半导体光掩模设计。 试制半导体光掩模设计锐化。 生成光掩模设计规范用于制造这种光掩模。
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公开(公告)号：US20090102069A1
公开(公告)日：2009-04-23
申请号：US11876663
申请日：2007-10-22
Applicant: Sia Kim Tan , Qunying Lin , Andrew Khoh
Inventor： Sia Kim Tan , Qunying Lin , Andrew Khoh
IPC: H01L23/544 , H01L21/76
CPC classification number: H01L27/0203 , G03F1/36 , G03F1/70 , G03F7/70425 , G03F7/70433
Abstract: An integrated circuit system comprising: providing a substrate; forming a main feature using a first non-cross-junction assist feature over the substrate; forming the main feature using a second non-cross-junction assist feature, adjacent a location of the first non-cross-junction feature, over the substrate; and forming an integrated circuit having the substrate with the main feature thereover.
Abstract translation: 一种集成电路系统，包括：提供衬底; 在衬底上形成使用第一非交叉接合辅助特征的主要特征; 使用邻近所述第一非交叉连接特征的位置的第二非交叉点辅助特征在所述衬底上形成所述主要特征; 以及形成具有其主要特征的基板的集成电路。
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公开(公告)号：US07313780B2
公开(公告)日：2007-12-25
申请号：US11078820
申请日：2005-03-10
Applicant: Andrew Khoh , Byong-Il Choi , Lap Chan , Ganesh Samudra , Yihong Wu
Inventor： Andrew Khoh , Byong-Il Choi , Lap Chan , Ganesh Samudra , Yihong Wu
IPC: G06F17/50
CPC classification number: G03F1/36
Abstract: A trial semiconductor photomask design having discontinuity points is provided, and each of the discontinuity points is treated as simulated light sources. Simulated light from each of the simulated light sources is focused, and a composite image intensity of the focused simulated light is calculated to verify the trial semiconductor photomask design. The trial semiconductor photomask design is sharpened. A photomask design specification is generated for use in fabricating such a photomask.
Abstract translation: 提供具有不连续点的试验半导体光掩模设计，将每个不连续点视为模拟光源。 聚焦每个模拟光源的模拟光，并计算聚焦模拟光的合成图像强度，以验证试验半导体光掩模设计。 试制半导体光掩模设计锐化。 生成光掩模设计规范用于制造这种光掩模。
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