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公开(公告)号：US07740723B2
公开(公告)日：2010-06-22
申请号：US11804082
申请日：2007-05-17
申请人： Andrew C. Perry , Paul S. Gilman , Wendell Stuber , Binu Mathew
发明人： Andrew C. Perry , Paul S. Gilman , Wendell Stuber , Binu Mathew
IPC分类号： C22F1/16
CPC分类号： C22C5/04 , C22F1/14 , C23C14/3414
摘要： A precious metal sputter target has a composition selected from the group consisting of platinum, palladium, rhodium, iridium, ruthenium, osmium and single-phase alloys thereof. The sputter target's grain structure is at least about 99 percent recrystallized and has a grain size of less than about 200 μm for improving sputter uniformity. The cryogenic method for producing these sputter targets is also effective for improving sputter performance for silver an gold sputter targets.
摘要翻译： 贵金属溅射靶具有选自铂，钯，铑，铱，钌，锇及其单相合金的组成。 溅射靶的晶粒结构至少约99％重结晶，并且具有小于约200μm的晶粒尺寸以改善溅射均匀性。 用于制造这些溅射靶的低温方法对于提高银溅射靶的溅射性能也是有效的。
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2.发明授权公开(公告)号：US06942763B2
公开(公告)日：2005-09-13
申请号：US10411212
申请日：2003-04-11
CPC分类号： C22F1/04 , C23C14/3414
摘要： An aluminum alloy sputter target having a sputter target face for sputtering the sputter target is disclosed. The sputter target face has a textured-metastable grain structure. The textured-metastable grain structure has a grain orientation ratio of at least 35 percent (200) orientation. The textured-metastable grain structure is stable during sputtering of the sputter target. The textured-metastable grain structure has a grain size of less than 5 μm. The method forms aluminum alloy sputter targets by first cooling an aluminum alloy target blank to a temperature of less than −50° C. Then deforming the cooled aluminum alloy target blank introduces plastic strain into the target blank and reduces the grain size of the grains to form a textured-metastable grain structure. Finally, finishing the aluminum alloy target blank forms a finished sputter target that maintains the textured-metastable grain structure of the finished sputter target.
摘要翻译： 公开了一种具有用于溅射溅射靶的溅射靶面的铝合金溅射靶。 溅射靶表面具有纹理 - 亚稳态晶粒结构。 纹理亚稳态晶粒结构具有至少35％（200）取向的晶粒取向比。 纹理 - 亚稳晶粒结构在溅射靶溅射期间是稳定的。 纹理亚稳态晶粒结构的晶粒尺寸小于5μm。 该方法通过首先将铝合金靶材坯料冷却至低于-50℃的温度来形成铝合金溅射靶。然后使冷却的铝合金靶坯变形，将塑性应变引入目标坯料中，并将晶粒的晶粒尺寸减小至 形成有纹理的亚稳态晶粒结构。 最后，整理铝合金靶材坯料形成了一种成品溅射靶，其保持了成品溅射靶的纹理 - 亚稳态晶粒结构。
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3.发明授权公开(公告)号：US06605199B2
公开(公告)日：2003-08-12
申请号：US09991851
申请日：2001-11-14
IPC分类号： C23C1434
CPC分类号： C22F1/04 , C23C14/3414
摘要： An aluminum alloy sputter target having a sputter target face for sputtering the sputter target is provided. The sputter target face has a textured-metastable grain structure. The textured-metastable grain structure has a grain orientation ratio of at least 35 percent (200) orientation. The textured-metastable grain structure is stable during sputtering of the sputter target. The textured-metastable grain structure has a grain size of less than 5 &mgr;m. The method forms aluminum alloy sputter targets by first cooling an aluminum alloy target blank to a temperature of less than −50° C. Then deforming the cooled aluminum alloy target blank introduces plastic strain into the target blank and reduces the grain size of the grains to form a textured-metastable grain structure. Finally, finishing the aluminum alloy target blank forms a finished sputter target that maintains the textured-metastable grain structure of the finished sputter target.
摘要翻译： 提供具有用于溅射溅射靶的溅射靶面的铝合金溅射靶。 溅射靶表面具有纹理 - 亚稳态晶粒结构。 纹理亚稳态晶粒结构具有至少35％（200）取向的晶粒取向比。 纹理 - 亚稳晶粒结构在溅射靶溅射期间是稳定的。 纹理亚稳态晶粒结构的晶粒尺寸小于5μm。 该方法通过首先将铝合金靶材坯料冷却至低于-50℃的温度来形成铝合金溅射靶。然后使冷却的铝合金靶坯变形，将塑性应变引入目标坯料中，并将晶粒的晶粒尺寸减小至 形成有纹理的亚稳态晶粒结构。 最后，整理铝合金靶材坯料形成了一种成品溅射靶，其保持了成品溅射靶的纹理 - 亚稳态晶粒结构。
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公开(公告)号：US07608172B2
公开(公告)日：2009-10-27
申请号：US10637531
申请日：2003-08-11
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , C22F1/10 , H01F41/183
摘要： The method manufactures high-purity ferromagnetic sputter targets by cryogenic working the sputter target blank at a temperature below at least −50° C. to impart at least about 5 percent strain into the sputter target blank to increase PTF uniformity of the target blank. The sputter target blank is a nonferrous metal selected from the group consisting of cobalt and nickel; and the nonferrous metal has a purity of at least about 99.99 weight percent. Finally, fabricating the sputter target blank forms a sputter target having an improved PTF uniformity arising from the cryogenic working.
摘要翻译： 该方法通过在低于至少-50℃的温度下对溅射靶坯进行低温加工制造高纯度铁磁溅射靶，以使至少约5％的应变进入溅射靶坯，以增加目标坯料的PTF均匀性。 溅射靶坯是选自钴和镍的有色金属; 并且有色金属具有至少约99.99重量％的纯度。 最后，制造溅射靶坯形成具有由低温加工产生的改进的PTF均匀性的溅射靶。
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公开(公告)号：US07235143B2
公开(公告)日：2007-06-26
申请号：US10214671
申请日：2002-08-08
申请人： Andrew C. Perry , Paul S. Gilman , Wendell Stuber , Binu Mathew
发明人： Andrew C. Perry , Paul S. Gilman , Wendell Stuber , Binu Mathew
IPC分类号： C22C5/04
CPC分类号： C22C5/04 , C22F1/14 , C23C14/3414
摘要： A precious metal sputter target has a composition selected from the group consisting of platinum, palladium, rhodium, iridium, ruthenium, osmium and single-phase alloys thereof. The sputter target's grain structure is at least about 99 percent recrystallized and has a grain size of less than about 200 μm for improving sputter uniformity. The cryogenic method for producing these sputter targets is also effective for improving sputter performance for silver and gold sputter targets.
摘要翻译： 贵金属溅射靶具有选自铂，钯，铑，铱，钌，锇及其单相合金的组成。 溅射靶的晶粒结构至少约99％重结晶，并且具有小于约200μm的粒度以改善溅射均匀性。 用于制造这些溅射靶的低温方法对于改善银和金溅射靶的溅射性能也是有效的。
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公开(公告)号：US06708870B2
公开(公告)日：2004-03-23
申请号：US10153660
申请日：2002-05-24
IPC分类号： B23K3102
CPC分类号： B23K20/023 , B23K20/16 , B23K2103/10
摘要： The method forms a sputter target assembly by attaching a sputter target to an insert and applying a bond metal layer between the insert and a backing plate. Then pressing the insert and backing plate together forms a solid state bond with the bond metal layer, attaches the insert to the backing plate and forms at least one cooling channel between the insert and the backing plate. A filler metal secures the outer perimeter of the insert to the backing plate in order to eliminate leakage from the cooling channel during sputtering of the sputter target.
摘要翻译： 该方法通过将溅射靶附接到插入件并且在插入件和背板之间施加粘合金属层来形成溅射靶组件。 然后将插入物和背板压在一起形成与粘合金属层的固态结合，将插入物附接到背板上，并在插入件和背板之间形成至少一个冷却通道。 填充金属将插入件的外周固定到背板上，以便在溅射靶溅射期间消除冷却通道的泄漏。
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公开(公告)号：US08123107B2
公开(公告)日：2012-02-28
申请号：US10852117
申请日：2004-05-25
IPC分类号： B23K20/00
CPC分类号： B23K35/02
摘要： The method forms a sputter target assembly by attaching a sputter target to an insert and applying a bond metal layer between the insert and a backing plate. Then pressing the insert and backing plate together forms a solid state bond with the bond metal layer, attaches the insert to the backing plate and forms at least one cooling channel between the insert and the backing plate.
摘要翻译： 该方法通过将溅射靶附接到插入件并且在插入件和背板之间施加粘合金属层来形成溅射靶组件。 然后将插入物和背板压在一起形成与粘合金属层的固态结合，将插入件附接到背板上，并在插入件和背板之间形成至少一个冷却通道。
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公开(公告)号：US06835251B2
公开(公告)日：2004-12-28
申请号：US10219756
申请日：2002-08-16
申请人： Andrew C. Perry , Paul S. Gilman , Thomas J. Hunt
发明人： Andrew C. Perry , Paul S. Gilman , Thomas J. Hunt
IPC分类号： C22C2100
CPC分类号： C23C14/3414 , C22F1/04
摘要： The high-purity aluminum sputter target is at least 99.999 weight percent aluminum and has a grain structure. The grain structure is at least 99 percent recrystallized and has a grain size of less than 200 &mgr;m. The method forms high-purity aluminum sputter targets by first cooling a high-purity target blank to a temperature of less than −50° C. and then deforming the cooled high-purity target blank introduces intense strain into the high-purity target. After deforming, recrystallizing the grains at a temperature below 200° C. forms a target blank having at least 99 percent recrystallized grains. Finally, finishing at a low temperature sufficient to maintain the fine grain size of the high-purity target blank forms a finished sputter target.
摘要翻译： 高纯度铝溅射靶至少为99.999重量％的铝，具有晶粒结构。 晶粒结构至少99％重结晶，粒径小于200μm。 该方法通过首先将高纯度目标坯料冷却至低于-50℃的温度，然后使冷却的高纯度靶材坯料变形，将高应变压制成高纯度靶材，形成高纯度铝溅射靶。 变形后，在低于200℃的温度下使晶粒再结晶，形成具有至少99％再结晶晶粒的靶坯。 最后，在足以维持高纯度靶材坯料的细晶粒尺寸的低温下进行精加工，形成成品溅射靶。
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公开(公告)号：US06896748B2
公开(公告)日：2005-05-24
申请号：US10198256
申请日：2002-07-18
申请人： Andrew C. Perry , Paul S. Gilman
发明人： Andrew C. Perry , Paul S. Gilman
CPC分类号： C23C14/3414 , C22F1/08
摘要： The sputter target has a composition selected from the group consisting of high-purity copper and copper-base alloys. The sputter target's grain structure is at least about 99 percent recrystallized; and the sputter target's face has a grain orientation ratio of at least about 10 percent each of (111), (200), (220) and (311). In addition, the sputter target has a grain size of less than about 10 μm for improving sputter uniformity and reducing sputter target arcing.
摘要翻译： 溅射靶具有选自高纯度铜和铜基合金的组成。 溅射靶的晶粒结构至少约99％重结晶; 并且溅射靶的面具有（111），（200），（220）和（311）的至少约10％的晶粒取向比。 此外，溅射靶具有小于约10um的晶粒尺寸，以改善溅射均匀性并减少溅射靶电弧。
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公开(公告)号：US06652668B1
公开(公告)日：2003-11-25
申请号：US10158164
申请日：2002-05-31
IPC分类号： H01F114
CPC分类号： C23C14/3414 , C22F1/10 , H01F41/183
摘要： The method manufactures high-purity ferromagnetic sputter targets by cryogenic working the sputter target blank at a temperature below at least −50° C. to impart at least about 5 percent strain into the sputter target blank to increase PTF uniformity of the target blank. The sputter target blank is a nonferrous metal selected from the group consisting of cobalt and nickel; and the nonferrous metal has a purity of at least about 99.99 weight percent. Finally, fabricating the sputter target blank forms a sputter target having an improved PTF uniformity arising from the cryogenic working.
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