公开(公告)号：US20100297555A1

公开(公告)日：2010-11-25

申请号：US12863924

申请日：2009-02-03

申请人： Hiroshi Koyama ,  Kyuhei Kitao ,  Akira Eguchi

发明人： Hiroshi Koyama ,  Kyuhei Kitao ,  Akira Eguchi

IPC分类号： G03F7/20 ,  C07D307/77 ,  C08F24/00 ,  G03F7/004

CPC分类号： C07D307/93 ,  C07D307/00 ,  C08F220/18 ,  C08F220/28 ,  G03F7/0397

摘要： Disclosed is a monomer having an electron-withdrawing substituent and a lactone skeleton, represented by following Formula (1), wherein Ra represents, e.g., a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; R1 represents, e.g., a halogen atom or an alkyl or haloalkyl group having 1 to 6 carbon atoms; “A” represents an alkylene group having 1 to 6 carbon atoms, oxygen atom, sulfur atom, or nonbonding; “m” denotes an integer of 0 to 8; Xs each represent an electron-withdrawing substituent; “n” denotes an integer of 1 to 9; and Y represents a bivalent organic group having 1 to 6 carbon atoms.The monomer is useful typically as a monomer component typically for a highly functional polymer, because, when the monomer is applied typically to a resist resin, the resin is satisfactory stable and resistant typically to chemicals, is highly soluble in organic solvents, and has improved hydrolyzability and/or solubility in water after hydrolysis.

摘要翻译： 公开了具有吸电子取代基和内酯骨架的单体，其由下式（1）表示，其中Ra表示例如氢原子或具有1至6个碳原子的烷基; R1表示例如卤素原子或碳原子数为1〜6的烷基或卤代烷基; “A”表示碳原子数1〜6的亚烷基，氧原子，硫原子，或非键合物。 “m”表示0〜8的整数， Xs各自表示吸电子取代基; “n”表示1〜9的整数， Y表示碳原子数为1〜6的2价有机基团。 单体通常用作高官能聚合物的单体组分，因为当单体通常用于抗蚀剂树脂时，树脂是令人满意的稳定和耐化学物质，高度可溶于有机溶剂，并改善了 水解后水解性和/或水溶性。

公开(公告)号：US08637623B2

公开(公告)日：2014-01-28

申请号：US12863924

申请日：2009-02-03

申请人： Hiroshi Koyama ,  Kyuhei Kitao ,  Akira Eguchi

发明人： Hiroshi Koyama ,  Kyuhei Kitao ,  Akira Eguchi

IPC分类号： C08F20/10 ,  C08F20/22 ,  C08F20/26 ,  C08F20/34 ,  C07D317/06 ,  C07C69/01 ,  C07C69/013 ,  G03F7/004 ,  G03F7/26

CPC分类号： C07D307/93 ,  C07D307/00 ,  C08F220/18 ,  C08F220/28 ,  G03F7/0397

摘要： Disclosed is a monomer having an electron-withdrawing substituent and a lactone skeleton, represented by Formula (1), wherein Ra represents, e.g., hydrogen or an alkyl group having 1 to 6 carbons; R1 represents, e.g., a halogen or an alkyl or haloalkyl group having 1 to 6 carbons; “A” represents an alkylene group having 1 to 6 carbons, oxygen, sulfur, or is nonbonding; “m” denotes an integer of 0 to 8; Xs each represent an electron-withdrawing substituent; “n” denotes an integer of 1 to 9; and Y represents a bivalent organic group having 1 to 6 carbons. The monomer is useful as a monomer component typically for a highly functional polymer, because, when the monomer is applied to a resist resin, the resin is stable and resistant to chemicals, is highly soluble in organic solvents, and has improved hydrolyzability and/or solubility in water after hydrolysis.

摘要翻译： 公开了由式（1）表示的具有吸电子取代基和内酯骨架的单体，其中，Ra表示例如氢或碳原子数为1〜6的烷基， R1表示例如卤素或具有1至6个碳原子的烷基或卤代烷基; “A”表示碳原子数为1〜6的亚烷基，氧，硫，或未键合; “m”表示0〜8的整数， Xs各自表示吸电子取代基; “n”表示1〜9的整数， Y表示碳原子数1〜6的2价有机基团。 该单体通常用作高官能聚合物的单体组分，因为当将单体施用于抗蚀剂树脂时，该树脂是稳定的并且耐化学品，高度可溶于有机溶剂，并具有改善的水解性和/或 水解后溶于水。

公开(公告)号：US20110287594A1

公开(公告)日：2011-11-24

申请号：US13072961

申请日：2011-03-28

申请人： Akira Eguchi

发明人： Akira Eguchi

IPC分类号： H01L21/336

CPC分类号： H01L27/0629

摘要： A polysilicon film to be a resistor element is formed on a resistor element formation region of a semiconductor substrate while a polysilicon gate and high concentration impurity regions are formed on a transistor formation region. Thereafter, an insulating film is formed on the entire surface of the semiconductor substrate. Then, a photoresist film is formed to cover the transistor formation region, and a conductive impurity is ion-implanted into the polysilicon film. Next, the photoresist film is removed by asking.

摘要翻译： 在半导体衬底的电阻元件形成区域上形成作为电阻元件的多晶硅膜，同时在晶体管形成区域上形成多晶硅栅极和高浓度杂质区域。 此后，在半导体衬底的整个表面上形成绝缘膜。 然后，形成光致抗蚀剂膜以覆盖晶体管形成区域，并且将导电杂质离子注入到多晶硅膜中。 接下来，通过询问去除光致抗蚀剂膜。

公开(公告)号：US08753793B2

公开(公告)日：2014-06-17

申请号：US13132375

申请日：2009-01-15

申请人： Akira Eguchi ,  Masamichi Nishimura

发明人： Akira Eguchi ,  Masamichi Nishimura

IPC分类号： G03F7/004 ,  G03F7/039 ,  C08F20/10

CPC分类号： G03F7/0397 ,  C08F220/18 ,  C08F220/28 ,  G03F7/0046 ,  G03F7/16

摘要： Disclosed is a method for producing a resin solution for photoresists, which includes the steps of heating and thereby aging a solution at 30° C. to 90° C. for 30 minutes or longer, the solution containing, in a solvent, a photoresist resin capable of being alkali-soluble by the action of an acid; and filtering the aged solution through a filter medium having a pore size of 1 μm or less. The method gives a photoresist composition having good filterability which enables uniform patterning. The method also gives a resin solution for photoresists which is stable over a long time, namely, a resin solution for photoresists which maintains good filterability even after long-term storage.

摘要翻译： 公开了一种光致抗蚀剂用树脂溶液的制造方法，其特征在于，包括在30℃〜90℃下加热溶解30分钟以上的步骤，该溶液在溶剂中含有光致抗蚀剂树脂 能够通过酸的作用而碱溶; 并通过孔径为1μm以下的过滤介质过滤老化溶液。 该方法得到具有良好过滤性的光致抗蚀剂组合物，其能够均匀地图案化。 该方法还给出了长时间稳定的光致抗蚀剂用树脂溶液，即即使在长期保存后也保持良好的过滤性的光致抗蚀剂用树脂溶液。

公开(公告)号：US08361874B2

公开(公告)日：2013-01-29

申请号：US13072961

申请日：2011-03-28

申请人： Akira Eguchi

发明人： Akira Eguchi

IPC分类号： H01L21/8238 ,  H01L21/336 ,  H01L21/20 ,  H01L21/461

CPC分类号： H01L27/0629

摘要： A polysilicon film to be a resistor element is formed on a resistor element formation region of a semiconductor substrate while a polysilicon gate and high concentration impurity regions are formed on a transistor formation region. Thereafter, an insulating film is formed on the entire surface of the semiconductor substrate. Then, a photoresist film is formed to cover the transistor formation region, and a conductive impurity is ion-implanted into the polysilicon film. Next, the photoresist film is removed by ashing.

摘要翻译： 在半导体衬底的电阻元件形成区域上形成作为电阻元件的多晶硅膜，同时在晶体管形成区域上形成多晶硅栅极和高浓度杂质区域。 此后，在半导体衬底的整个表面上形成绝缘膜。 然后，形成光致抗蚀剂膜以覆盖晶体管形成区域，并且将导电杂质离子注入到多晶硅膜中。 接下来，通过灰化除去光致抗蚀剂膜。

公开(公告)号：US20110244394A1

公开(公告)日：2011-10-06

申请号：US13132375

申请日：2009-01-15

申请人： Akira Eguchi ,  Masamichi Nishimura

发明人： Akira Eguchi ,  Masamichi Nishimura

IPC分类号： G03F7/004 ,  G03F7/20

CPC分类号： G03F7/0397 ,  C08F220/18 ,  C08F220/28 ,  G03F7/0046 ,  G03F7/16

摘要： Disclosed is a method for producing a resin solution for photoresists, which includes the steps of heating and thereby aging a solution at 30° C. to 90° C. for 30 minutes or longer, the solution containing, in a solvent, a photoresist resin capable of being alkali-soluble by the action of an acid; and filtering the aged solution through a filter medium having a pore size of 1 μm or less. The method gives a photoresist composition having good filterability which enables uniform patterning. The method also gives a resin solution for photoresists which is stable over a long time, namely, a resin solution for photoresists which maintains good filterability even after long-term storage.

摘要翻译： 公开了一种光致抗蚀剂用树脂溶液的制造方法，其特征在于，包括在30℃〜90℃下加热溶解30分钟以上的步骤，该溶液在溶剂中含有光致抗蚀剂树脂 能够通过酸的作用而碱溶; 并通过孔径为1μm以下的过滤介质过滤老化溶液。 该方法得到具有良好过滤性的光致抗蚀剂组合物，其能够均匀地图案化。 该方法还给出了长时间稳定的光致抗蚀剂用树脂溶液，即即使在长期保存后也保持良好的过滤性的光致抗蚀剂用树脂溶液。