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公开(公告)号：US20220302352A1
公开(公告)日：2022-09-22
申请号：US17832558
申请日：2022-06-03
发明人： Yingce LIU , Junxian LI , Zhao LIU , Xuan HUANG , Xingen WU
摘要： A mini LED chip and a manufacturing method thereof are provided. The mini LED chip includes a growth substrate and a light-emitting epitaxial layer including a first type semiconductor layer, a luminous layer, and a second type semiconductor layer. The second type semiconductor layer and the luminous layer include an electrode contact hollow part that exposes the first type semiconductor layer. Further, the mini LED chip includes a transparent conductive layer disposed on a side of the second type semiconductor layer facing away from the growth substrate, an extended electrode disposed on a side of the transparent conductive layer facing away from the growth substrate, an insulating and isolating reflection layer covering the electrode contact hollow part and an exposed surface of the transparent conductive layer and the extended electrode facing away from the growth substrate, and a first bonding electrode and a second bonding electrode.
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公开(公告)号：US20210336089A1
公开(公告)日：2021-10-28
申请号：US16626516
申请日：2019-07-30
发明人： Xingen WU , Yingce LIU , Junxian LI , Zhendong WEI
摘要： A semiconductor light emitting chip includes a substrate and an N-type semiconductor layer sequentially developed from the substrate, an active region, a P-type semiconductor layer, a reflective layer, at least two insulating layers, an anti-diffusion layer and an electrode set. One of the insulating layers is extended to surround the inner peripheral portion of the reflective layer, and another the insulating layer is extended to surround the outer peripheral portion of the reflective layer, such that the insulating layer isolates the anti-diffusion layer from the P-type semiconductor layer. The electrode set includes an N-type electrode and a P-type electrode, wherein the N-type electrode is electrically connected to the N-type semiconductor layer, and the P-type electrode is electrically connected to the P-type semiconductor layer.
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公开(公告)号：US20200219715A1
公开(公告)日：2020-07-09
申请号：US16826160
申请日：2020-03-20
发明人： Kaixuan CHEN , Zhiwei LIN , Liyan HUO , Xiangjing ZHUO , Gang YAO , Aimin WANG
IPC分类号： H01L21/02 , H01L21/28 , H01L21/3213
摘要： Provided is a method for manufacturing a semiconductor wafer and a semiconductor wafer. The method includes: disposing a sacrificial layer on a first surface and a second surface of a patterned substrate, the patterned substrate comprising the first surface and the second surface having different normal directions; exposing the first surface by removing the first portion of the sacrificial layer disposed on the first surface; growing an original nitride buffer layer on the first surface and the second portion of the sacrificial layer; partially lifting off the second portion of the sacrificial layer disposed on the second surface such that at least one sub-portion of the second portion of the sacrificial layer remains on the second surface of the patterned substrate; and growing an epitaxial layer on the original nitride buffer layer, where a crystal surface of the epitaxial layer grows along a normal direction of the patterned substrate.
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公开(公告)号：US20190221709A1
公开(公告)日：2019-07-18
申请号：US16220264
申请日：2018-12-14
发明人： Zhiwei LIN , Kaixuan CHEN , Junxian LI , Xiangjing ZHUO , Qilong WU
摘要： A light-emitting diode (LED) device and a method of producing the same are provided. The LED device comprises a first conductive layer, a second conductive layer, an active layer sandwiched between the first conductive layer and the second conductive layer and a first electrode in electrical contact with the first conductive layer. The first conductive layer has a laminate structure comprising a first conductive sub-layer, a current blocking layer, and a second conductive sub-layer. The first electrode comprises a first extended electrode in electrical contact with the first conductive sub-layer, and a second extended electrode in electrical contact with the second conductive sub-layer. The first conductive sub-layer and the second conductive sub-layer may have different depths.
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公开(公告)号：US20190088476A1
公开(公告)日：2019-03-21
申请号：US16179419
申请日：2018-11-02
发明人： Kaixuan Chen , Wei Jiang , Zhiwei Lin , Xiangjing Zhuo , Tianzu Fang , Yang Wang , Jichu Tong
摘要： Disclosed is a wafer or a material stack for semiconductor-based optoelectronic or electronic devices that minimizes or reduces misfit dislocation, as well as a method of manufacturing such wafer of material stack. A material stack according to the disclosed technology includes a substrate; a basis buffer layer of a first material disposed above the substrate; and a plurality of composite buffer layers disposed above the basis buffer layer sequentially along a growth direction. The growth direction is from the substrate to a last composite buffer layer of the plurality of composite buffer layers. Each composite buffer layer except the last composite buffer layer includes a first buffer sublayer of the first material, and a second buffer sublayer of a second material disposed above the first buffer sublayer. The thicknesses of the first buffer sublayers of the composite buffer layers decrease along the growth direction.
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公开(公告)号：US20240038938A1
公开(公告)日：2024-02-01
申请号：US18380139
申请日：2023-10-13
发明人： Xiaodong QU , Kaixuan CHEN , Hengping CUI , Haifang CAI , Yumei CAI , Zhiwei LIN , Kewei YANG , Bin ZHAO , Tudui JIANG , Yan LI , Minhua LI , Guilan LUO
CPC分类号： H01L33/405 , H01L33/44 , H01L33/22 , H01L33/0093
摘要： A light-emitting structure, comprising: a substrate, and a first metal layer, an insulating layer, an integrated metal layer, and an epitaxial stack, disposed above the substrate. The integrated metal layer is disposed on a surface of the second-type semiconductor layer facing away from the active region, and the integrated metal layer comprises an exposed surface on a side of the integrated metal layer facing the second-type semiconductor layer, the exposed surface being configured to electrically connect with an external driving device.
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公开(公告)号：US20230361245A1
公开(公告)日：2023-11-09
申请号：US18219035
申请日：2023-07-06
发明人： Zhiwei LIN , Kaixuan CHEN , Jianjiu CAI , Xiangjing ZHUO , Gang YAO , Wei CHENG
摘要： The present disclosure provides a semiconductor epitaxial structure, including a substrate, a first-type semiconductor layer, an active region comprising at least one quantum layer, and a second-type semiconductor layer sequentially stacked on a surface of the substrate; wherein the quantum layer comprises barrier layers and potential well layers, and the barrier layers are alternately stacked with the potential well layers, and wherein the quantum layer further comprises a growth temperature transition layer between a barrier layer and a potential well layer, or an electron confinement layer between a barrier layer and a potential well layer.
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公开(公告)号：US11469349B2
公开(公告)日：2022-10-11
申请号：US16961259
申请日：2019-07-16
发明人： Xingen Wu , Junxian Li , Yingce Liu , Zhendong Wei , Hongyi Zhou
摘要： A semiconductor chip of a LED and a manufacturing method thereof are disclosed. The semiconductor chip includes a substrate, an N-type semiconductor layer, an active region, a P-type semiconductor layer, and at least one semiconductor exposing portion extending from the P-type semiconductor layer to the N-type semiconductor layer. The semiconductor chip further includes one or more current blocking layers, a transparent conductive layer, an N-type electrode, and a P-type electrode, wherein the current blocking layer encapsulates the P-type semiconductor in such a manner to be stacked on the P-type semiconductor layer. The transparent conductive layer has one or more through holes corresponding to the one or more current blocking layers respectively. The N-type electrode is stacked on the N-type semiconductor layer and the P-type electrode is stacked on the N-type semiconductor layer. The P-type prongs of the P-type electrode are retained in the through holes of the transparent conductive layer respectively.
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公开(公告)号：US20210091262A1
公开(公告)日：2021-03-25
申请号：US16961259
申请日：2019-07-16
发明人： Xingen WU , Junxian LI , Yingce LIU , Zhendong WEI , Hongyi ZHOU
摘要： A semiconductor chip of a LED and a manufacturing method thereof are disclosed. The semiconductor chip includes a substrate, an N-type semiconductor layer, an active region, a P-type semiconductor layer, and at least one semiconductor exposing portion extending from the P-type semiconductor layer to the N-type semiconductor layer. The semiconductor chip further includes one or more current blocking layers, a transparent conductive layer, an N-type electrode, and a P-type electrode, wherein the current blocking layer encapsulates the P-type semiconductor in such a manner to be stacked on the P-type semiconductor layer. The transparent conductive layer has one or more through holes corresponding to the one or more current blocking layers respectively. The N-type electrode is stacked on the N-type semiconductor layer and the P-type electrode is stacked on the N-type semiconductor layer. The P-type prongs of the P-type electrode are retained in the through holes of the transparent conductive layer respectively.
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公开(公告)号：US10937926B2
公开(公告)日：2021-03-02
申请号：US16317694
申请日：2017-07-14
发明人： Zhiwei Lin , Kaixuan Chen , Yong Zhang , Xiangjing Zhuo , Wei Jiang , Yang Wang , Jichu Tong , Tianzu Fang
摘要： A semiconductor wafer includes a substrate (1), a buffer layer (2) deposited on the substrate (1), and an epitaxial layer (4) above the buffer layer (2). The buffer layer (2) includes a plurality of semiconductor material layers (22) and a plurality of oxygen-doped material layers (21). The semiconductor material layers (22) and the oxygen-doped material layers (21) are deposited in an alternating arrangement on top of each other. Oxygen concentrations of the oxygen-doped material layers (21) gradually decrease along a direction from the substrate (1) to the epitaxial layer (4).
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