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公开(公告)号:US11283240B2
公开(公告)日:2022-03-22
申请号:US16208958
申请日:2018-12-04
发明人: Yi-Ching Pao , Majid Riaziat , Ta-Chung Wu , Wilson Kyi , James Pao
IPC分类号: H01S5/183 , H01S5/026 , H01S5/0234 , H01S5/0237 , H01S5/34 , H01S5/02 , H01S5/20 , H01S5/042 , H01S5/42 , H01S5/024
摘要: A backside Vertical Cavity Surface Emitting Laser (VCSEL) has a substrate. A first mirror device is formed on the substrate. An active region is formed on the first mirror device. A second mirror device is formed on the active region. A pillar is formed by directional Inductive Coupled Plasma-Reactive Ion Etcher (ICP-RIE). The pillar exposes a portion of the first mirror device, the active region and the second mirror device. A first metal contact is formed over a top section of the pillar. A second metal contact is formed on the substrate. An opening formed in the second metal contact and aligned with the pillar.
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公开(公告)号:US11424595B2
公开(公告)日:2022-08-23
申请号:US16820263
申请日:2020-03-16
发明人: Yi-Ching Pao , Majid Riaziat , Ta-Chung Wu , Wilson Kyi , James Pao
IPC分类号: H01S5/183 , H01S5/026 , H01S5/0234 , H01S5/0237 , H01S5/34 , H01S5/02 , H01S5/20 , H01S5/042 , H01S5/42 , H01S5/024
摘要: A backside Vertical Cavity Surface Emitting Laser (VCSEL) has a substrate. A first mirror device is formed on the substrate. An active region is formed on the first mirror device. A second mirror device is formed on the active region. A pillar is formed by directional Inductive Coupled Plasma-Reactive Ion Etcher (ICP-RIE). The pillar exposes a portion of the first mirror device, the active region and the second mirror device. A first metal contact is formed over a top section of the pillar. A second metal contact is formed on the substrate. An opening formed in the second metal contact and aligned with the pillar.
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公开(公告)号:US10658998B2
公开(公告)日:2020-05-19
申请号:US14445967
申请日:2014-07-29
申请人: Majid Riaziat , Yu-Min Houng
发明人: Majid Riaziat , Yu-Min Houng
IPC分类号: H03H3/02 , H01L41/313
摘要: A method for forming an acoustic resonator comprising: forming a piezoelectric material on a first substrate; and applying the piezoelectric material to a second substrate on which the acoustic resonator is fabricated upon.
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4.
公开(公告)号:US08546237B2
公开(公告)日:2013-10-01
申请号:US12872609
申请日:2010-08-31
申请人: Majid Riaziat
发明人: Majid Riaziat
IPC分类号: H01L21/76
CPC分类号: H01L21/7806 , H01L21/2007
摘要: A method of transferring an epitaxial film from an original substrate to a destination substrate comprises: growing an epitaxial film grown with a sacrificial layer on the original substrate; patterning the epitaxial film into a plurality of sections; attaching the plurality of sections to a stretchable film; removing the plurality of sections attached to the stretchable film from the original substrate; stretching the sections apart as needed; and attaching a permanent substrate to the plurality of sections; and trimming the sizes of the sections as needed for precise positioning prior to integrated circuit device fabrication.
摘要翻译: 将外延膜从原始衬底转移到目标衬底的方法包括:在原始衬底上生长用牺牲层生长的外延膜; 将外延膜图案化成多个部分; 将所述多个部分附接到可拉伸膜; 从原始基板去除附接到可拉伸膜的多个部分; 根据需要拉伸部分; 以及将永久基板附接到所述多个部分; 并且在集成电路器件制造之前根据需要修整各部分的尺寸以进行精确定位。
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公开(公告)号:US11264780B2
公开(公告)日:2022-03-01
申请号:US16239083
申请日:2019-01-03
发明人: Yi-Ching Pao
IPC分类号: H01S5/0234 , H01S5/042 , H01S5/42 , H01S5/323 , H01S5/024 , H01S5/183 , H01S5/0237 , H01S5/026 , H01S5/02345
摘要: A flip chip backside Vertical Cavity Surface Emitting Laser (VCSEL) package has a VCSEL pillar array. A first metal contact is formed over a top section of each pillar of the VCSEL pillar array. A second metal contact is formed on a back surface of the VCEL pillar array. An opening is formed in the second metal contact and aligned with the pillars of the VCSEL pillar array. Solder tip is applied on each pillar of the VCSEL pillar array to flip chip mount the VCSEL pillar array.
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公开(公告)号:US11201251B2
公开(公告)日:2021-12-14
申请号:US16782788
申请日:2020-02-05
发明人: Yi-Ching Pao , Majid Riaziat , Ta-Chung Wu
IPC分类号: H01L29/66 , H01L21/332 , H01L31/0224 , H01L31/0352 , H01L31/105
摘要: A photodiode has a substrate. A mesa structure is formed on the substrate, wherein the mesa structure has an n region containing an n type dopant formed on the substrate, an intermediate region positioned on the n region and a p region formed on the intermediate region and containing a p type dopant. A contact is formed on a top surface of the mesa and attached to the p region. The contact is formed around an outer perimeter of the mesa. The mesa has a diameter of 30 um or less.
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公开(公告)号:US06920161B2
公开(公告)日:2005-07-19
申请号:US10212011
申请日:2002-08-02
CPC分类号: H01S5/02212 , H01L2224/48091 , H01L2924/30107 , H01L2924/3011 , H01S5/02276 , H01S5/06226 , H01S5/0683 , H01S5/183 , H01L2924/00014 , H01L2924/00
摘要: Various methods and apparatuses extend the useful operation speed of TO-can optoelectronic packages up to speeds of 10 Gbps and beyond.
摘要翻译: 各种方法和设备将TO-can光电封装的有效运行速度扩展到10Gbps以上的速度。
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8.
公开(公告)号:US11757255B2
公开(公告)日:2023-09-12
申请号:US16824390
申请日:2020-03-19
发明人: Yi-Ching Pao
IPC分类号: H01S5/183 , H01S5/42 , H01S5/0234 , H01S5/042 , H01S5/026 , H01S5/0237 , H01S5/02345
CPC分类号: H01S5/18369 , H01S5/0234 , H01S5/18305 , H01S5/18341 , H01S5/423 , H01S5/026 , H01S5/0237 , H01S5/02345 , H01S5/04254 , H01S5/18388 , H01S2301/176
摘要: A method of forming a flip chip backside Vertical Cavity Surface Emitting Laser (VCSEL) package comprising: forming a VCSEL pillar array; applying a dielectric layer to the VCSEL pillar array, the dielectric layer filling trenches in between pillars forming the VCSEL pillar array and covering the pillars; planarizing the VCSEL pillar array to remove the dielectric layer covering the pillars exposing a metal layer on a top surface of the pillars; applying a metal coating on the metal layer on a top surface of the pillars, the metal layer defining a contact pattern of the VCSEL pillar array; and applying solder on the metal coating to flip chip mount the VCSEL pillar array to a substrate package.
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公开(公告)号:US11424597B2
公开(公告)日:2022-08-23
申请号:US15883930
申请日:2018-01-30
发明人: Ping-Show Wong , Jingzhou Yan , Ta-Chung Wu , James Pao , Majid Riaziat
摘要: A vertical-cavity surface-emitting laser (VCSEL) has a substrate formed of GaAs. A pair of mirrors is provided wherein one of the pair of mirrors is formed on the substrate. A tunnel junction is formed between the pair of mirrors.
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10.
公开(公告)号:US11233377B2
公开(公告)日:2022-01-25
申请号:US16258976
申请日:2019-01-28
发明人: Yi-Ching Pao
IPC分类号: H01S5/183 , H01S5/42 , H01S5/0234 , H01S5/042 , H01S5/026 , H01S5/0237 , H01S5/02345
摘要: A method of forming a flip chip backside Vertical Cavity Surface Emitting Laser (VCSEL) package comprising: forming a VCSEL pillar array; applying a dielectric layer to the VCSEL pillar array, the dielectric layer filling trenches in between pillars forming the VCSEL pillar array and covering the pillars; planarizing the VCSEL pillar array to remove the dielectric layer covering the pillars exposing a metal layer on a top surface of the pillars; applying a metal coating on the metal layer on a top surface of the pillars, the metal layer defining a contact pattern of the VCSEL pillar array; and applying solder on the metal coating to flip chip mount the VCSEL pillar array to a substrate package.
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