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412 条记录 (耗时 0.029 秒)

    INSULATION COVERED CONDUCTIVE WIRE
    2.
    发明公开
    INSULATION COVERED CONDUCTIVE WIRE 审中-公开

    公开(公告)号：US20240233982A1

    公开(公告)日：2024-07-11

    申请号：US18556118

    申请日：2022-04-20

    申请人： FURUKAWA ELECTRIC CO., LTD. ,  JAPAN AEROSPACE EXPLORATION AGENCY

    发明人： Tomoya NOMURA ,  Yoichi ISO ,  Hiroyuki TAMAOKA ,  Shinatora CHO ,  Satoshi HOSODA

    IPC分类号： H01B7/29 ,  H01B3/12 ,  H01B7/02 ,  H01F5/06

    CPC分类号： H01B7/292 ,  H01B3/12 ,  H01B7/0266 ,  H01F5/06

    摘要： The insulation covered conductive wire includes a conductive wire, a non-adherent, laterally wound insulation member and a non-adherent braided insulation member. The non-adherent, laterally wound insulation member covers an outer circumference of the conductive wire without adhering thereto and is formed by laterally winding a plurality of first ceramic fibers constituted from a plurality of first ceramic strands in an extending direction of the conductive wire. The first ceramic strands are not in contact with each other and do not adhere to each other. The non-adherent braided insulation member covers an outer circumference of the non-adherent, laterally wound insulation member without adhering thereto and is formed by braiding a plurality of second ceramic fibers constituted from a plurality of second ceramic strands. The second ceramic fibers are not in contact with each other and do not adhere to each other.

    CMOS CIRCUIT
    3.
    发明公开
    CMOS CIRCUIT 审中-公开

    公开(公告)号：US20240213983A1

    公开(公告)日：2024-06-27

    申请号：US18555494

    申请日：2022-05-11

    申请人： Japan Aerospace Exploration Agency

    发明人： Kozo TAKEUCHI

    IPC分类号： H03K19/003

    CPC分类号： H03K19/00315

    摘要： A complementary metal oxide semiconductor (CMOS) circuit includes a logical operation circuit formed on a substrate of a first conductivity type and including at least a combination of a first transistor of the first conductivity type having a first well of a second conductivity type different from the first conductivity type and a second transistor of the second conductivity type having a second well of the first conductivity type, a third transistor of the first conductivity type having a gate terminal connected to the second well, and a fourth transistor of the second conductivity type having a gate terminal connected to the first well.

    RIBLET STRUCTURE AND OBJECT
    9.
    发明公开
    RIBLET STRUCTURE AND OBJECT 审中-公开

    公开(公告)号：US20230365251A1

    公开(公告)日：2023-11-16

    申请号：US18245562

    申请日：2021-09-22

    申请人： JAPAN AEROSPACE EXPLORATION AGENCY

    发明人： Mitsuru KURITA ,  Hiroyuki ABE ,  Hidetoshi IIJIMA ,  Seigo KOGA

    IPC分类号： B64C21/10 ,  F15D1/12 ,  F15D1/00

    CPC分类号： B64C21/10 ,  F15D1/004 ,  F15D1/12 ,  B64C2230/26

    摘要： [Object] To provide a riblet structure that increases resistance reducing performance and is easily manufacturable, and an object including such a structure on a surface thereof. [Solving Means] This riblet structure includes a plurality of wave-shaped riblets on a surface thereof, in which each of the riblets has a smaller peak height as an angle formed between a ridge line and a fluid flow direction becomes larger, a width between peak bases in a direction orthogonal to the fluid flow direction becomes smaller as the angle becomes larger, and an angle formed between a slope of a peak of the riblet and the surface at the peak base or a curvature at the peak base is identical at any position in a cross-sectional shape in the direction orthogonal to the fluid direction.