公开(公告)号：US20230253265A1

公开(公告)日：2023-08-10

申请号：US18004559

申请日：2021-08-05

申请人： Japan Aerospace Exploration Agency

发明人： Kozo TAKEUCHI

IPC分类号： H01L21/8238 ,  H01L27/092 ,  H03K19/0948

CPC分类号： H01L21/823892 ,  H01L27/0928 ,  H03K19/0948

摘要： In a complementary metal oxide semiconductor (CMOS) circuit formed on a substrate of a first conductivity type, a first logical operation circuit includes a combination of a first transistor of the first conductivity type having a first well of a second conductivity type different from the first conductivity type and a second transistor of the second conductivity type having a second well of the first conductivity type and a transmission circuit is connected to an output terminal of the first logical operation circuit and includes one or both of a third transistor of the first conductivity type and a fourth transistor of the second conductivity type. Each of gate terminals of the third transistor and the fourth transistor is connected to a well of a transistor of a different conductivity type between the first transistor and the second transistor or an output terminal of a second logical operation circuit.

公开(公告)号：US20240213983A1

公开(公告)日：2024-06-27

申请号：US18555494

申请日：2022-05-11

申请人： Japan Aerospace Exploration Agency

发明人： Kozo TAKEUCHI

IPC分类号： H03K19/003

CPC分类号： H03K19/00315

摘要： A complementary metal oxide semiconductor (CMOS) circuit includes a logical operation circuit formed on a substrate of a first conductivity type and including at least a combination of a first transistor of the first conductivity type having a first well of a second conductivity type different from the first conductivity type and a second transistor of the second conductivity type having a second well of the first conductivity type, a third transistor of the first conductivity type having a gate terminal connected to the second well, and a fourth transistor of the second conductivity type having a gate terminal connected to the first well.