公开(公告)号：US11742449B2

公开(公告)日：2023-08-29

申请号：US17871712

申请日：2022-07-22

申请人： Adaps Photonics Inc.

发明人： Ching-Ying Lu ,  Yangsen Kang ,  Shuang Li ,  Kai Zang

IPC分类号： H01L31/10 ,  H01L31/107 ,  H01L31/02 ,  H01L27/146 ,  C30B25/18 ,  H04N25/76

CPC分类号： H01L31/107 ,  C30B25/18 ,  H01L27/14636 ,  H01L31/02027 ,  H04N25/76

摘要： The present invention provides a single photon avalanche diode device. The device has a logic substrate comprising an upper surface. The device has a sensor substrate bonded to an upper surface of the logic substrate. In an example, the sensor substrate comprises a plurality of pixel elements spatially disposed to form an array structure. In an example, each of the pixel elements has a passivation material, an epitaxially grown silicon material, an implanted p-type material configured in a first portion of the epitaxially grown material, an implanted n-type material configured in a second portion of the epitaxially grown material, and a junction region configured from the implanted p-type material and the implanted n-type material.

公开(公告)号：US20220367743A1

公开(公告)日：2022-11-17

申请号：US17871712

申请日：2022-07-22

申请人： Adaps Photonics Inc.

发明人： Ching-Ying LU ,  Yangsen KANG ,  Shuang LI ,  Kai ZANG

IPC分类号： H01L31/107 ,  H01L31/02 ,  H01L27/146 ,  H04N5/374 ,  C30B25/18

摘要： The present invention provides a single photon avalanche diode device. The device has a logic substrate comprising an upper surface. The device has a sensor substrate bonded to an upper surface of the logic substrate. In an example, the sensor substrate comprises a plurality of pixel elements spatially disposed to form an array structure. In an example, each of the pixel elements has a passivation material, an epitaxially grown silicon material, an implanted p-type material configured in a first portion of the epitaxially grown material, an implanted n-type material configured in a second portion of the epitaxially grown material, and a junction region configured from the implanted p-type material and the implanted n-type material.

公开(公告)号：US20210234057A1

公开(公告)日：2021-07-29

申请号：US16775101

申请日：2020-01-28

申请人： Adaps Photonics Inc.

发明人： Ching-Ying LU ,  Yangsen KANG ,  Shuang LI ,  Kai ZANG

IPC分类号： H01L31/107 ,  H01L31/02 ,  C30B25/18 ,  H04N5/374 ,  H01L27/146

摘要： The present invention provides a single photon avalanche diode device. The device has a logic substrate comprising an upper surface. The device has a sensor substrate bonded to an upper surface of the logic substrate. In an example, the sensor substrate comprises a plurality of pixel elements spatially disposed to form an array structure. In an example, each of the pixel elements has a passivation material, an epitaxially grown silicon material, an implanted p-type material configured in a first portion of the epitaxially grown material, an implanted n-type material configured in a second portion of the epitaxially grown material, and a junction region configured from the implanted p-type material and the implanted n-type material.

公开(公告)号：US11508867B2

公开(公告)日：2022-11-22

申请号：US16775101

申请日：2020-01-28

申请人： Adaps Photonics Inc.

发明人： Ching-Ying Lu ,  Yangsen Kang ,  Shuang Li ,  Kai Zang

IPC分类号： H01L31/10 ,  H01L31/107 ,  H01L31/02 ,  H01L27/146 ,  H04N5/374 ,  C30B25/18

摘要： The present invention provides a single photon avalanche diode device. The device has a logic substrate comprising an upper surface. The device has a sensor substrate bonded to an upper surface of the logic substrate. In an example, the sensor substrate comprises a plurality of pixel elements spatially disposed to form an array structure. In an example, each of the pixel elements has a passivation material, an epitaxially grown silicon material, an implanted p-type material configured in a first portion of the epitaxially grown material, an implanted n-type material configured in a second portion of the epitaxially grown material, and a junction region configured from the implanted p-type material and the implanted n-type material.

公开(公告)号：US20210296377A1

公开(公告)日：2021-09-23

申请号：US17207490

申请日：2021-03-19

申请人： Adaps Photonics Inc.

发明人： Ching-Ying LU ,  Yangsen KANG ,  Shuang LI ,  Kai ZANG

IPC分类号： H01L27/146 ,  G01J1/44

摘要： The present invention relates generally to sensing devices. In a specific embodiment, the present invention provides a SPAD pixel device that include a p-type material that partially encloses an n-type material. The junction between the p-type material and the n-type material is three dimensional and includes both a horizontal area and lateral areas. The SPAD pixel device also includes isolation structures that separate the SPAD pixel device from others. There are other embodiments as well.