公开(公告)号：US20020168467A1

公开(公告)日：2002-11-14

申请号：US10186919

申请日：2002-07-02

申请人： ALCATEL

发明人： Michel Puech

IPC分类号： B05D001/36 ,  C23F001/00 ,  H01L021/306 ,  H05H001/24

CPC分类号： H01J37/32449 ,  H01J37/3244 ,  H01L21/30655 ,  H01L21/32136

摘要： In a process for treatment of a substrate placed in a vacuum enclosure, the invention provides for compensating any variation of the active gas supply flowrate through an active gas supply pipe by injecting a complementary flowrate of control gas into an area near controlled gas aspiration means. This circumvents the inability of pressure control systems and impedance matching systems to respond in times of the order of one second to variations of the input active gas flowrate.

摘要翻译： 在处理放置在真空封壳中的基板的处理过程中，本发明通过将控制气体的互补流量注入到接近受控气体抽吸装置的区域中来补偿通过活性气体供应管道的活性气体供应流量的任何变化。 这避免了压力控制系统和阻抗匹配系统无法在一秒钟的时间内响应于输入活性气体流量的变化。

公开(公告)号：US20020136896A1

公开(公告)日：2002-09-26

申请号：US10138570

申请日：2002-05-06

申请人： FUTABA DENSHI KOGYO KABUSHIKI KAISHA

发明人： Hirofumi Takikawa ,  Shigeo Itoh

IPC分类号： B05D005/12 ,  H05H001/24

CPC分类号： B82Y10/00 ,  H01J9/025 ,  H01J2201/30469 ,  Y10T428/30

摘要： A method of preparing an electron emission source having excellent electron emission characteristics which is easily produced and an electron emission source are provided. Chamber 101 is brought to He atmosphere of 1 Pa pressure, arc current of DC 100 A is allowed to flow to perform arc discharge for one second, cathode 102 is heated locally, cathode materials constituting cathode 102 are scattered and carbon particles on the surface of which a lot of carbon nano-tube is formed are produced. The aforementioned carbon particles are collected to use as an emitter of an electron emission source.

摘要翻译： 制备容易产生优异的电子发射特性的电子发射源的方法和电子发射源。 将室101置于1Pa压力的He气氛中，允许直流100A的电弧电流流过电弧放电1秒钟，阴极102被局部加热，构成阴极102的阴极材料被散射，碳颗粒表面上的碳颗粒 生成大量的碳纳米管。 收集上述碳颗粒以用作电子发射源的发射极。

公开(公告)号：US20020122897A1

公开(公告)日：2002-09-05

申请号：US10023828

申请日：2001-12-21

申请人： TOYO SEIKAN KAISHA, LTD.

发明人： Tsunehisa Namiki ,  Toshihide Ieki ,  Akira Kobayashi ,  Koji Yamada ,  Hideo Kurashima

IPC分类号： H05H001/24

CPC分类号： H01J37/32192 ,  C23C16/045 ,  C23C16/26 ,  C23C16/511

摘要： Disclosed is a method of treatment with a microwave plasma by maintaining a reduced pressure in a plasma-treating chamber for treatment with a plasma in which a substrate that is to be treated with a microwave plasma is contained, introducing a treating gas into the plasma-treating chamber and introducing microwaves into the plasma-treating chamber, wherein a metallic antenna is disposed in the plasma-treating chamber. The plasma is generated within a very short period of time maintaining stability after the microwaves are introduced into the plasma-treating chamber, and the treatment is accomplished maintaining stability.

摘要翻译： 公开了一种利用微波等离子体处理的方法，其中通过在等离子体处理室中进行等离子体处理处理，以等离子体处理，其中包含用微波等离子体处理的基板的等离子体，将处理气体引入到等离子体处理室中， 处理室并将微波引入等离子体处理室，其中金属天线设置在等离子体处理室中。 在将微波引入等离子体处理室之后，在非常短的时间内产生等离子体，从而保持稳定性，并且保持稳定性的处理。

公开(公告)号：US20020122896A1

公开(公告)日：2002-09-05

申请号：US09796488

申请日：2001-03-02

申请人： SKION CORPORATION

发明人： Steven Kim ,  Dong Woo Yu ,  Seok-Kyun Song ,  Seungdeok Kim

IPC分类号： H05H001/24 ,  C23F001/00 ,  C23C016/00 ,  H01L021/3065

CPC分类号： H01J37/32009 ,  A61L2/14 ,  B08B7/0035 ,  H01J37/32082 ,  H01J37/32532 ,  H05H1/2406 ,  H05H2001/2456

摘要： A plasma treatment apparatus for a workpiece includes a metal electrode, a capillary dielectric having first and second sides and coupled to the metal electrode through the first side, wherein the capillary dielectric has at least one capillary, a shield body surrounding the metal electrode and the first side of the capillary dielectric, wherein the shield body has first and second end portions, and a gas supplier providing gas to the metal electrode.

摘要翻译： 一种用于工件的等离子体处理装置包括金属电极，具有第一和第二侧的毛细管电介质，并通过第一侧与金属电极耦合，其中毛细管电介质具有至少一个毛细管，围绕金属电极的屏蔽体和 毛细管电介质的第一侧，其中屏蔽体具有第一和第二端部，以及向金属电极提供气体的气体供应器。

公开(公告)号：US20020090467A1

公开(公告)日：2002-07-11

申请号：US10043417

申请日：2002-01-09

申请人： Applied Materials, Inc.

发明人： Chandrasekaram Ramiah ,  Jeffrey L. Young ,  Neil L. Pagel

IPC分类号： H05H001/24

CPC分类号： C23C16/505 ,  C23C16/401

摘要： A method and apparatus for improving film stability and moisture resistance of a borophosphosilicate film. The BPSG film according to the present invention is formed under plasma conditions in which high and low frequency RF power is employed to generate the plasma. The high frequency power supply provides most of the energy to break the molecules in the process gas thereby forming the plasma and promoting the necessary reactions. The low frequency power supply regulates and controls ion bombardment of the BPSG film as it is formed. In a preferred embodiment, nitrogen is included in the process gas and the low frequency RF power supply is used to precisely control ion bombardment during deposition processing thereby allowing incorporation of an unexpectedly elevated amount of nitrogen into the film further improving film stability.

公开(公告)号：US20020038632A1

公开(公告)日：2002-04-04

申请号：US09899188

申请日：2001-07-06

发明人： Toshiyasu Shirasuna ,  Tatsuyuki Aoike ,  Kazuyoshi Akiyama ,  Hitoshi Murayama ,  Takashi Otsuka ,  Daisuke Tazawa ,  Kazuto Hosoi ,  Yukihiro Abe

IPC分类号： C23C016/505 ,  H05H001/24

CPC分类号： C23C16/24 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/32183 ,  H05H1/46

摘要： In a plasma treatment method of and apparatus for treating the surface of a treatment target substrate by utilizing glow discharge produced by supplying high-frequency power into an inside-evacuated reactor through a high-frequency power supply means, a plurality of impedance regulation means for regulating impedances on the side of the reactor and on the side of the high-frequency power supply means are provided correspondingly to the impedances of a plurality of reactors, and the high-frequency power is supplied into the reactors via the impedance regulation means corresponding to the reactors. Plasma treatment can be made in a good efficiency and a low cost on a plurality of reactors having different impedances.

摘要翻译： 在通过利用通过高频电源装置将高频电力提供给内部抽真空电抗器而产生的辉光放电来处理目标衬底表面的等离子体处理方法和装置中，多个阻抗调节装置 对应于多个电抗器的阻抗设置在电抗器一侧和高频电源装置一侧上的调节阻抗，并且高频电力通过对应于 反应堆。 可以在具有不同阻抗的多个反应器中以高效率和低成本进行等离子体处理。

公开(公告)号：US20010030025A1

公开(公告)日：2001-10-18

申请号：US09833819

申请日：2001-04-13

发明人： Tsukasa Fujita

IPC分类号： H05H001/24

CPC分类号： H01J37/32055 ,  H01J37/32532

摘要： A plasma treatment apparatus and method are disclosed. The plasma treatment apparatus has a discharge unit with at least one discharge electrode assembly disposed on a generally rectangular-shaped housing in a position that is offset from being coaxial with a longitudinal axis of the discharge unit housing. A plurality of discharge units can be arranged side by side so that their discharge electrodes are alternately disposed with respect to one another in order to treat a wide work surfaces that are wider than the distance between discharge electrodes.

摘要翻译： 公开了一种等离子体处理装置和方法。 等离子体处理装置具有放电单元，其具有至少一个放电电极组件，该放电电极组件设置在大致矩形形状的壳体上，其位置偏离与放电单元壳体的纵向轴线同轴。 并排布置多个放电单元，使得它们的放电电极相对于彼此交替布置，以便处理比放电电极之间的距离更宽的宽工作表面。

公开(公告)号：US20010002284A1

公开(公告)日：2001-05-31

申请号：US09759803

申请日：2001-01-12

申请人： Minnesota Mining and Manufacturing Company

发明人： Gunter A. Kohler ,  William H. Esswein ,  Seth M. Kirk ,  Brian J. Gates

IPC分类号： C23C016/513 ,  H05H001/24

CPC分类号： B05D1/62 ,  C23C16/4485 ,  C23C16/513 ,  Y10T428/269 ,  Y10T428/273 ,  Y10T428/31663

摘要： The present invention provides a method for the formation of an organic coating on a substrate. The method includes: providing a substrate in a vacuum; providing at least one vaporized organic material comprising at least one component from at least one source, wherein the vaporized organic material is capable of condensing in a vacuum of less than about 130 Pa; providing a plasma from at least one source other than the source of the vaporized organic material; directing the vaporized organic material and the plasma toward the substrate; and causing the vaporized organic material to condense and polymerize on the substrate in the presence of the plasma to form an organic coating.

摘要翻译： 本发明提供了在基材上形成有机涂层的方法。 该方法包括：在真空中提供衬底; 提供至少一种包含至少一种来自至少一种源的组分的汽化有机材料，其中所述蒸发的有机材料能够在小于约130Pa的真空中冷凝; 从除蒸发的有机材料的源之外的至少一个源提供等离子体; 将蒸发的有机材料和等离子体引向衬底; 并使蒸发的有机材料在等离子体存在下在衬底上冷凝和聚合以形成有机涂层。

公开(公告)号：US20040247886A1

公开(公告)日：2004-12-09

申请号：US10858704

申请日：2004-06-01

申请人： KONICA MINOLTA HOLDINGS, INC.

发明人： Ichiro Kudo ,  Atsushi Saito ,  Hiroaki Arita

IPC分类号： H05H001/24

CPC分类号： C03C17/42 ,  B05D1/62 ,  B05D5/083 ,  B05D2203/35 ,  C03C2217/76 ,  C03C2218/153 ,  C23C16/30 ,  C23C16/401 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45595 ,  C23C16/505 ,  C23C16/545 ,  H05H1/2406 ,  H05H2001/2412 ,  H05H2001/2456 ,  Y10T428/3154

摘要： A thin film forming method, wherein a discharge gas is introduced into a discharge space to be excited under an atmospheric or approximately atmospheric pressure, a thin film forming gas containing an orgenometallic compound with an organic group containing a fluorine atom being brought into contact with said excited discharge gas outside the discharge space to be converted into an indirectly excited gas, and a substrate is exposed to said indirectly excited gas to form a thin film on said substrate, and a thin film formed substance formed by the same.

摘要翻译： 一种薄膜形成方法，其中放电气体被引入放电空间以在大气压或大气压下被激发，将含有含有氟原子的有机基团的异基金属化合物的薄膜形成气体与所述 在放电空间外的激发放电气体被转换为间接激发的气体，并且将衬底暴露于所述间接激发的气体，以在所述衬底上形成薄膜，以及由其形成的薄膜形成物质。

公开(公告)号：US20040247799A1

公开(公告)日：2004-12-09

申请号：US10890586

申请日：2004-07-13

申请人： Jusung Engineering Co., Ltd.

发明人： Young Suk Lee

IPC分类号： H05H001/24 ,  C23C016/00

CPC分类号： C23C16/45563 ,  C23C16/30 ,  C23C16/45589 ,  C23C16/509

摘要： In a PECVD (plasma enhanced chemical vapor deposition) apparatus including a reaction chamber; plural susceptors installed inside the reaction chamber and horizontally mounted with a wafer respectively; a heating means for heating the susceptors; a power supply unit installed outside of the reaction chamber; a plasma electrode receiving RF power from the power supply unit, generating and maintaining plasma inside the reaction chamber; and a rotation jet spray having two spray injectors horizontally rotating and supplying gas inside the reaction chamber, a thin film is deposited by supplying BTMSM vapor and oxygen retaining gas through the spray injector, supplying hydrogen retaining gas through the other spray injector and horizontally rotating the spray injectors in the supply. Herein, a pressure in the reaction chamber is in the range of 0.1 Torrnull1 Torr, the wafer is heated at 25null C.null400null C., and RF power in the range of 100 Wnull2000 W is applied.