Abstract:
A thin film transistor including a substrate; a semiconductor layer disposed over the substrate; a gate insulting film disposed over the semiconductor layer; and a gate electrode. The semiconductor layer includes a channel region, a source region, and a drain region. The gate insulating film includes a first region and a second region. The second region borders the first region. The gate electrode is disposed over the first region. A step shape is formed where the second region meets the first region.
Abstract:
An organic light-emitting display apparatus includes a substrate, an active layer of a thin film transistor formed over the substrate, a gate insulating layer formed over the active layer, a gate electrode of the thin film transistor formed over the gate insulating layer, an interlayer insulating layer formed over the gate electrode and the first electrode, a source electrode and a drain electrode formed over the interlayer insulating layer, a pixel electrode including a first region in direct contact with an upper surface of the interlayer insulating layer and a second region in direct contact with an upper surface of one of the source electrode and the drain electrode, a pixel defining layer covering the source and drain electrodes and including an opening which exposes the first region of the pixel electrode in an area that does not overlap the thin film transistor.
Abstract:
An organic light-emitting display apparatus includes a substrate; a plurality of pixels disposed on the substrate, each of the plurality of pixels including a first region through which light is emitted and a second region through which external light is transmitted; a pixel circuit unit disposed in the first region of each of the plurality of pixels and including at least one thin-film transistor (TFT); a black matrix covering the pixel circuit unit and including a first opening corresponding to the second region; a via-insulating film disposed on the black matrix and including a second opening corresponding to the second region; and a light-emitting device disposed in the first region on the via-insulating film.
Abstract:
An organic light-emitting display apparatus includes a substrate, and a thin-film transistor and a capacitor formed over the substrate. The apparatus further includes an interlayer insulation layer, a first organic insulating layer and a second organic insulation layer sequentially stacked over the substrate and covering the thin-film transistor and a capacitor. The first organic insulation layer includes a first hole that does not overlap with the thin-film transistor and the capacitor when viewed in a direction perpendicular to a major surface of the substrate. The apparatus further includes a pixel electrode formed over the interlayer insulating layer and the first organic insulating layer. The pixel electrode includes a first portion disposed inside the first hole and a second portion disposed over the first organic insulating layer and outside the first hole. The apparatus includes a light emission layer and an opposite layer formed over the pixel electrode.
Abstract:
An organic light-emitting diode (OLED) display and a method of manufacturing the same are disclosed. In one aspect, the method includes performing a first mask process of forming an active layer of a thin-film transistor (TFT) and a first electrode of a capacitor over a substrate and performing a second mask process of i) forming a gate insulating layer and ii) forming a gate electrode of the TFT and a second electrode of the capacitor over the gate insulating layer. The method also includes performing a third mask process of i) forming first and second interlayer insulating layers and ii) removing portions of the first and second interlayer insulating layers so as to form a contact hole that exposes a portion of the active layer. The method also includes performing a fourth mask process of forming a pixel electrode over the second interlayer insulating layer.
Abstract:
An organic light-emitting display apparatus includes a substrate; a plurality of pixels disposed on the substrate, each of the plurality of pixels including a first region through which light is emitted and a second region through which external light is transmitted; a pixel circuit unit disposed in the first region of each of the plurality of pixels and including at least one thin-film transistor (TFT); a black matrix covering the pixel circuit unit and including a first opening corresponding to the second region; a via-insulating film disposed on the black matrix and including a second opening corresponding to the second region; and a light-emitting device disposed in the first region on the via-insulating film.
Abstract:
An organic light-emitting diode (OLED) display and a method of manufacturing the same are disclosed. In one aspect, the method includes performing a first mask process of forming an active layer of a thin-film transistor (TFT) over a substrate and performing a second mask process of i) forming a gate insulating layer over the active layer and ii) forming a gate electrode of the TFT over the gate insulating layer. The method also includes performing a third mask process of i) forming an interlayer insulating layer over the gate electrode and ii) forming a contact hole in the interlayer insulating layer so as to expose a portion of the active layer and performing a fourth mask process of forming a pixel electrode over the interlayer insulating layer.
Abstract:
An organic light emitting display includes a base substrate, an active layer on the base substrate, a gate insulating layer on the active layer, a gate electrode on the gate insulating layer, a first inter-insulating layer on the gate electrode, a second inter-insulating layer covering the first inter-insulating layer, source and drain electrodes on the second inter-insulating layer and connected to the active layer, a first electrode connected to the drain electrode, an organic light emitting layer on the first electrode, a second electrode facing the first electrode while the organic light emitting layer is between the first and second electrodes, and first and second capacitor electrodes facing each other while the gate insulating layer is between the first and second capacitor electrodes. The second inter-insulating layer makes contact with an upper surface of the second capacitor electrode through an opening formed on the first inter-insulating layer.