公开(公告)号：US06754305B1

公开(公告)日：2004-06-22

申请号：US09629407

申请日：2000-08-01

Applicant: Allan Rosencwaig ,  Jon Opsal

Inventor： Allan Rosencwaig ,  Jon Opsal

IPC: G01B1502

CPC classification number: G01B15/08 ,  G01B15/02 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The teachings of the subject invention lead to a new application of the XRR and RXRR systems. In particular, it has been recognized for the first time that such systems can be used to measure thickness of a variety of thin films (both dielectric, opaque and metal films) on patterned wafers where the feature size is smaller than the measurement spot. Broadly speaking, one aspect of the invention is the recognition that XRR and RXRR systems can be used not only on test wafers but on patterned wafers as well. The approach of the present invention to measuring the film thicknesses of patterned semiconductor wafers using XRR relies on the recognition that the measured X-ray reflection curve can be attributed primarily to the thicknesses of the layers rather than the structure of the pattern. In one aspect of the present invention, analysis of the patterned wafer may be reduced to the problem of analyzing an unpatterned wafer through a relatively simple transformation of the data. In another aspect of the present invention, analysis of the patterned wafer may be simplified by using a Fourier transform analysis.

Abstract translation: 本发明的教导导致XRR和RXRR系统的新应用。 特别地，已经首先认识到这样的系统可用于测量图案化晶片上各种薄膜（电介质，不透明和金属膜）的厚度，其中特征尺寸小于测量点。 一般来说，本发明的一个方面是认识到XRR和RXRR系统不仅可以用于测试晶片，也可以用于图案化晶片上。 使用XRR测量图案化半导体晶片的膜厚度的本发明的方法取决于所测量的X射线反射曲线主要归因于层的厚度而不是图案的结构。 在本发明的一个方面，图案化晶片的分析可以通过数据的相对简单的变换来减少分析未图案化晶片的问题。 在本发明的另一方面，可以通过使用傅里叶变换分析来简化图案化晶片的分析。

公开(公告)号：US06704661B1

公开(公告)日：2004-03-09

申请号：US09906290

申请日：2001-07-16

Applicant: Jon Opsal ,  Hanyou Chu

Inventor： Jon Opsal ,  Hanyou Chu

IPC: G06F1700

CPC classification number: G03F7/70616 ,  G01B11/24 ,  G01N21/211 ,  G03F7/705 ,  G03F7/70625

Abstract: A system for characterizing periodic structures formed on a sample on a real time basis is disclosed. A multi-parameter measurement module generates output signals as a function of either wavelength or angle of incidence. The output signals are supplied to a parallel processor. The processor creates an initial theoretical model and then calculates the theoretical optical response of that sample. The calculated optical response is compared to measured values. Based on the comparison, the model configuration is modified to be closer to the actual measured structure. The processor recalculates the optical response of the modified model and compares the result to the measured data. This process is repeated in an iterative manner until a best fit is achieved. The steps of calculating the optical response of the model is distributed to the processors as a function of wavelength or angle of incidence so these calculations can be performed in parallel.

公开(公告)号：US06678349B2

公开(公告)日：2004-01-13

申请号：US10310593

申请日：2002-12-04

Applicant: Jon Opsal ,  Allan Rosencwaig

Inventor： Jon Opsal ,  Allan Rosencwaig

IPC: G01B1502

CPC classification number: G01N23/20

Abstract: This invention provides a measurement device that includes both an X-ray reflectometer and a thermal or plasma wave measurement module for determining the characteristics of a sample. Preferably, these two measurement modules are combined into a unitary apparatus and arranged to be able to take measurements at the same location on the wafer. A processor will receive data from both modules and combine that data to resolve ambiguities about the characteristics of the sample. The processor can be part of the device or separate therefrom as long as the measurement data is transferred to the processor.

Abstract translation: 本发明提供了一种包括X射线反射计和用于确定样品特性的热或等离子体波测量模块的测量装置。 优选地，将这两个测量模块组合成单一设备并且布置成能够在晶片上的相同位置进行测量。 处理器将从两个模块接收数据，并组合该数据以解决关于样本特征的模糊。 只要测量数据被传送到处理器，处理器可以是设备的一部分或与其分离。

公开(公告)号：US06650415B2

公开(公告)日：2003-11-18

申请号：US10206428

申请日：2002-07-26

Applicant: David E. Aspnes ,  Jon Opsal

Inventor： David E. Aspnes ,  Jon Opsal

IPC: G01J400

CPC classification number: G01J3/02 ,  G01J3/0229 ,  G01J3/0232 ,  G01N21/211 ,  G01N2021/213

Abstract: An ellipsometer, and a method of ellipsometry, for analyzing a sample using a broad range of wavelengths, includes a light source for generating a beam of polychromatic light having a range of wavelengths of light for interacting with the sample. A polarizer polarizes the light beam before the light beam interacts with the sample. A rotating compensator induces phase retardations of a polarization state of the light beam wherein the range of wavelengths and the compensator are selected such that at least a first phase retardation value is induced that is within a primary range of effective retardations of substantially 135° to 225°, and at least a second phase retardation value is induced that is outside of the primary range. An analyzer interacts with the light beam after the light beam interacts with the sample. A detector measures the intensity of light after interacting with the analyzer as a function of compensator angle and of wavelength, preferably at all wavelengths simultaneously. A processor determines the polarization state of the beam as it impinges the analyzer from the light intensities measured by the detector.

公开(公告)号：US06643354B2

公开(公告)日：2003-11-04

申请号：US10124776

申请日：2002-04-17

Applicant: Louis N. Koppel ,  Craig E. Uhrich ,  Jon Opsal

Inventor： Louis N. Koppel ,  Craig E. Uhrich ,  Jon Opsal

IPC: G01N23201

CPC classification number: G01N23/20

Abstract: The present invention relates to the calibration and alignment of an X-ray reflectometry (“XRR”) system for measuring thin films. An aspect of the present invention describes a method for accurately determining C0 for each sample placement and for finding the incident X-ray intensity corresponding to each pixel of a detector array and thus permitting an amplitude calibration of the reflectometer system. Another aspect of the present invention relates to a method for aligning an angle-resolved X-ray reflectometer that uses a focusing optic, which may preferably be a Johansson crystal. Another aspect of the present invention is to validate the focusing optic. Another aspect of the present invention relates to the alignment of the focusing optic with the X-ray source. Another aspect of the present invention concerns the correction of measurements errors caused by the tilt or slope of the sample. Yet another aspect of the present invention concerns the calibration of the vertical position of the sample.

公开(公告)号：US06567213B2

公开(公告)日：2003-05-20

申请号：US10141256

申请日：2002-05-08

Applicant: Allan Rosencwaig ,  Jon Opsal

Inventor： Allan Rosencwaig ,  Jon Opsal

IPC: G01J400

CPC classification number: G01B11/0641

Abstract: An optical measurement system is disclosed for evaluating samples with multi-layer thin film stacks. The optical measurement system includes a reference ellipsometer and one or more non-contact optical measurement devices. The reference ellipsometer is used to calibrate the other optical measurement devices. Once calibration is completed, the system can be used to analyze multi-layer thin film stacks. In particular, the reference ellipsometer provides a measurement which can be used to determine the total optical thickness of the stack. Using that information coupled with the measurements made by the other optical measurement devices, more accurate information about individual layers can be obtained.

公开(公告)号：US06522413B2

公开(公告)日：2003-02-18

申请号：US10098641

申请日：2002-03-15

Applicant: Jon Opsal ,  Li Chen

Inventor： Jon Opsal ,  Li Chen

IPC: G01B1124

CPC classification number: G01N21/211 ,  G01N21/1717

Abstract: An apparatus for characterizing multilayer samples is disclosed. An intensity modulated pump beam is focused onto the sample surface to periodically excite the sample. A probe beam is focused onto the sample surface within the periodically excited area. The power of the reflected probe beam is measured by a photodetector. The output of the photodetector is filtered and processed to derive the modulated optical reflectivity of the sample. Measurements are taken at a plurality of pump beam modulation frequencies. In addition, measurements are taken as the lateral separation between the pump and probe beam spots on the sample surface is varied. The measurements at multiple modulation frequencies and at different lateral beam spot spacings are used to help characterize complex multilayer samples. In the preferred embodiment, a spectrometer is also included to provide additional data for characterizing the sample.

公开(公告)号：US06512815B2

公开(公告)日：2003-01-28

申请号：US10139727

申请日：2002-05-06

Applicant: Jon Opsal ,  Allan Rosencwaig

Inventor： Jon Opsal ,  Allan Rosencwaig

IPC: G01B1502

CPC classification number: G01N23/20

Abstract: This invention provides a measurement device that includes both an X-ray reflectometer and a thermal or plasma wave measurement module for determining the characteristics of a sample. Preferably, these two measurement modules are combined into a unitary apparatus and arranged to be able to take measurements at the same location on the wafer. A processor will receive data from both modules and combine that data to resolve ambiguities about the characteristics of the sample. The processor can be part of the device or separate therefrom as long as the measurement data is transferred to the processor.

公开(公告)号：US06452685B2

公开(公告)日：2002-09-17

申请号：US09957478

申请日：2001-09-20

Applicant: Jon Opsal ,  Li Chen

Inventor： Jon Opsal ,  Li Chen

IPC: G01B1124

CPC classification number: G01N21/211 ,  G01N21/1717

Abstract: An apparatus for characterizing multilayer samples is disclosed. An intensity modulated pump beam is focused onto the sample surface to periodically excite the sample. A probe beam is focused onto the sample surface within the periodically excited area. The power of the reflected probe beam is measured by a photodetector. The output of the photodetector is filtered and processed to derive the modulated optical reflectivity of the sample. Measurements are taken at a plurality of pump beam modulation frequencies. In addition, measurements are taken as the lateral separation between the pump and probe beam spots on the sample surface is varied. The measurements at multiple modulation frequencies and at different lateral beam spot spacings are used to help characterize complex multilayer samples. In the preferred embodiment, a spectrometer is also included to provide additional data for characterizing the sample.

Abstract translation: 公开了一种用于表征多层样品的装置。 将强度调制的泵浦光束聚焦到样品表面上以周期性地激发样品。 探针光束聚焦在周期性激发区域内的样品表面上。 反射探测光束的光束由光电检测器测量。 对光电检测器的输出进行滤波和处理，以得出样品的调制光学反射率。 在多个泵浦光束调制频率下进行测量。 此外，测量取决于泵和探针之间的横向分离，样品表面上的光斑变化。 使用多个调制频率和不同横向光斑间距的测量来帮助表征复杂的多层样品。 在优选实施例中，还包括光谱仪以提供用于表征样品的附加数据。

公开(公告)号：US06320657B1

公开(公告)日：2001-11-20

申请号：US09619456

申请日：2000-07-19

Applicant: David E. Aspnes ,  Jon Opsal

Inventor： David E. Aspnes ,  Jon Opsal

IPC: G91J400

CPC classification number: G01J3/02 ,  G01J3/0229 ,  G01J3/0232 ,  G01N21/211 ,  G01N2021/213

Abstract: An ellipsometer, and a method of ellipsometry, for analyzing a sample using a broad range of wavelengths, includes a light source for generating a beam of polychromatic light having a range of wavelengths of light for interacting with the sample. A polarizer polarizes the light beam before the light beam interacts with the sample. A rotating compensator induces phase retardations of a polarization state of the light beam wherein the range of wavelengths and the compensator are selected such that at least a first phase retardation value is induced that is within a primary range of effective retardations of substantially 135° to 225°, and at least a second phase retardation value is induced that is outside of the primary range. An analyzer interacts with the light beam after the light beam interacts with the sample. A detector measures the intensity of light after interacting with the analyzer as a function of compensator angle and of wavelength, preferably at all wavelengths simultaneously. A processor determines the polarization state of the beam as it impinges the analyzer from the light intensities measured by the detector.

Abstract translation: 用于使用宽波长范围分析样品的椭偏仪的椭偏仪和椭偏仪的方法包括用于产生具有用于与样品相互作用的光波长范围的多色光束的光源。 在光束与样品相互作用之前，偏振器使光束偏振。 旋转补偿器引起光束的偏振状态的相位延迟，其中选择波长范围和补偿器，使得至少引入第一相位延迟值，该第一相位延迟值在大致135°至225°的有效延迟的主要范围内 °，并且引起超出初级范围的至少第二相位延迟值。 在光束与样品相互作用后，分析仪与光束相互作用。 检测器测量与分析仪相互作用后的光强度，作为补偿器角度和波长的函数，优选同时在所有波长处。 处理器确定当光束从由检测器测量的光强度撞击分析仪时的偏振状态。