公开(公告)号：US11832468B2

公开(公告)日：2023-11-28

申请号：US17358905

申请日：2021-06-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongkyu Seo ,  Kwanghee Kim ,  Eun Joo Jang ,  Won Sik Yoon ,  Tae Hyung Kim ,  Tae Ho Kim

IPC: H10K50/16 ,  H10K71/00 ,  H10K85/60 ,  H10K50/115 ,  H10K102/00

CPC classification number: H10K50/16 ,  H10K71/00 ,  H10K85/60 ,  H10K50/115 ,  H10K2102/00 ,  H10K2102/331

Abstract: Light emitting device, method of manufacturing the light emitting device, and display device including the light emitting device are disclosed. The light emitting device includes a first electrode and a second electrode each having a surface opposite the other, a light emitting layer including quantum dots that is disposed between the first electrode and the second electrode, and an electron auxiliary layer disposed between the light emitting layer and the second electrode, wherein the electron auxiliary layer includes metal oxide nanoparticles including an anion of an organic acid bound to a surface of the metal oxide nanoparticle.

公开(公告)号：US11767472B2

公开(公告)日：2023-09-26

申请号：US17709830

申请日：2022-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Hee Lee ,  Eun Joo Jang ,  Hyun A Kang ,  Tae Hyung Kim

IPC: C09K11/88 ,  C09K11/56 ,  C09K11/02 ,  H10K50/115 ,  B82Y20/00 ,  B82Y40/00

CPC classification number: C09K11/883 ,  C09K11/02 ,  C09K11/565 ,  B82Y20/00 ,  B82Y40/00 ,  H10K50/115 ,  Y10S977/774 ,  Y10S977/824 ,  Y10S977/892 ,  Y10S977/95

Abstract: A semiconductor nanocrystal particle including zinc (Zn), tellurium (Te) and selenium (Se), a method of producing the same, and an electronic device including the same are disclosed. In the semiconductor nanocrystal particle, an amount of the tellurium is less than an amount of the selenium, the particle includes a core including a first semiconductor material including zinc, tellurium, and selenium and a shell disposed on at least a portion of the core and including a second semiconductor material having a different composition from the first semiconductor material, and the semiconductor nanocrystal particle emits blue light including a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.

公开(公告)号：US11643597B2

公开(公告)日：2023-05-09

申请号：US17203872

申请日：2021-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung Kim ,  Hyun A Kang ,  Eun Joo Jang ,  Dae Young Chung

IPC: H01L51/50 ,  C09K11/70 ,  B82Y20/00 ,  B82Y40/00

CPC classification number: C09K11/703 ,  H01L51/5056 ,  H01L51/5072 ,  B82Y20/00 ,  B82Y40/00 ,  H01L51/502 ,  H01L2251/303 ,  H01L2251/5369

Abstract: Disclosed are a semiconductor nanocrystal particle including indium (In), zinc (Zn), and phosphorus (P), wherein a mole ratio of the zinc relative to the indium is greater than or equal to about 25:1, and the semiconductor nanocrystal particle includes a core including a first semiconductor material including indium, zinc, and phosphorus and a shell disposed on the core and including a second semiconductor material including zinc and sulfur, a method of producing the same, and an electronic device including the same. The semiconductor nanocrystal particle emits blue light having a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.

公开(公告)号：US11566176B2

公开(公告)日：2023-01-31

申请号：US16851495

申请日：2020-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Hee Lee ,  Hyo Sook Jang ,  Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Yuho Won ,  Eun Joo Jang ,  Yong Seok Han

IPC: C09K11/88 ,  H01L33/00 ,  H01L33/28 ,  H01L33/06

Abstract: A semiconductor nanocrystal particle including a core including a first semiconductor nanocrystal including zinc (Zn) and sulfur (S), selenium (Se), tellurium (Te), or a combination thereof; and a shell including a second semiconductor nanocrystal disposed on at least a portion of the core, wherein the core includes a dopant of a Group 1A element, a Group 2A element, or a combination thereof, and the semiconductor nanocrystal particle exhibits a maximum peak emission in a wavelength region of about 440 nanometers (nm) to about 470 nm.

公开(公告)号：US11512254B2

公开(公告)日：2022-11-29

申请号：US17036122

申请日：2020-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung Kim ,  Yuho Won ,  Eun Joo Jang ,  Heejae Chung ,  Oul Cho

IPC: H01L21/08 ,  C09K11/88 ,  C09K11/08 ,  H01L51/50 ,  B82Y40/00 ,  B82Y20/00

Abstract: A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound, and a shell disposed on the core and including a semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dots do not include cadmium, the shell includes a first layer disposed directly on the core and including a second semiconductor nanocrystal including zinc and selenium, a second layer, the second layer being an outermost layer of the shell and including a third semiconductor nanocrystal including zinc and sulfur, and a third layer disposed between the first layer and the second layer and including a fourth semiconductor nanocrystal including zinc, selenium, and optionally sulfur, and a difference between a peak emission wavelength of a colloidal solution of the quantum dot and a peak emission wavelength of a film prepared from the colloidal solution is less than or equal to about 5 nanometers (nm).

公开(公告)号：US11296294B2

公开(公告)日：2022-04-05

申请号：US16910369

申请日：2020-06-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Sook Jang ,  Tae Hyung Kim ,  Eun Joo Jang ,  Oul Cho

IPC: H01L51/50

Abstract: A display device including a light source; and a quantum dot emission layer disposed on the light source, wherein the quantum dot emission layer includes a first emission layer disposed in a red pixel of the display device, and a second emission layer disposed in a green pixel of the display device, the light source includes a first portion configured to supply a first incident light to the first emission layer, a second portion configured to supply a second incident light to the second emission layer, and a third portion configured to supply a third light to a blue pixel of the display device, the first emission layer includes red light emitting quantum dots and the second emission layer includes green light emitting quantum dots, and each of the first portion, the second portion, and the third portion comprises a layer comprising blue light emitting quantum dots.

公开(公告)号：US11180694B2

公开(公告)日：2021-11-23

申请号：US16851625

申请日：2020-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Hee Lee ,  Hyun A Kang ,  Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Yuho Won ,  Eun Joo Jang

IPC: C09K11/02 ,  C09K11/88 ,  C01B19/00 ,  B82Y20/00 ,  B82Y40/00 ,  H01L51/50 ,  B82Y30/00

Abstract: A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: RCONHR  Chemical Formula 1 wherein each R is as defined herein; heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture; adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.

公开(公告)号：US11018311B2

公开(公告)日：2021-05-25

申请号：US16797380

申请日：2020-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Young Chung ,  Eun Joo Jang ,  Oul Cho ,  Hyun A Kang ,  Tae Hyung Kim ,  Yun Sung Woo ,  Jeong Hee Lee

IPC: H01L51/50 ,  H01L51/52

Abstract: An electronic device includes a first electrode and a second electrode facing each other, an emission layer comprising a plurality of quantum dots, wherein the emission layer is disposed between the first electrode and the second electrode; a first charge auxiliary layer disposed between the first electrode and the emission layer; and an optical functional layer disposed on the second electrode on a side opposite the emission layer, wherein the first electrode includes a reflecting electrode, wherein the second electrode is a light-transmitting electrode, wherein a region between the optical functional layer and the first electrode comprises a microcavity structure, and a refractive index of the optical functional layer is greater than or equal to a refractive index of the second electrode.

公开(公告)号：US11011721B2

公开(公告)日：2021-05-18

申请号：US16863164

申请日：2020-04-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung Kim ,  Eun Joo Jang ,  Dae Young Chung ,  Yong Wook Kim ,  Yuho Won ,  Oul Cho

IPC: C09K11/88 ,  H01L51/50 ,  H01L51/00 ,  H01L27/32 ,  C09K11/02 ,  H05B33/14

Abstract: An electroluminescence display device, including a first electrode and a second electrode facing each other; a quantum dot emission layer disposed between the first electrode and the second electrode, the quantum dot emission layer including a plurality of quantum dots and not including cadmium, wherein the quantum dot emission layer includes a red emission layer disposed in a red pixel, a green emission layer disposed in a green pixel, and a blue emission layer disposed in a blue pixel, wherein the device has color reproducibility according to a DCI standard of greater than or equal to about 89%.

公开(公告)号：US11011720B2

公开(公告)日：2021-05-18

申请号：US16298357

申请日：2019-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung Kim ,  Sung Woo Kim ,  Jin A Kim ,  Yuho Won ,  Jeong Hee Lee ,  Eun Joo Jang ,  Oul Cho

IPC: H01L51/50 ,  H01L51/00 ,  C09K11/88 ,  B82Y20/00 ,  B82Y40/00 ,  H01L51/52 ,  H01L51/56

Abstract: A quantum dot including a core including a first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including zinc, tellurium, selenium, and sulfur, a production method thereof, and an electronic device including the same. The quantum dot is free of cadmium, the quantum dot has a mole ratio of tellurium with respect to selenium of less than or equal to about 0.06:1, a photoluminescence peak wavelength of the quantum dot is greater than or equal to about 450 nm and less than or equal to about 470 nanometers (nm), and a full width at half maximum (FWHM) of a photoluminescence peak of the quantum dot is less than or equal to about 41 nm.