公开(公告)号：US09601496B2

公开(公告)日：2017-03-21

申请号：US14109159

申请日：2013-12-17

申请人： Samsung Electronics Co., Ltd.

发明人： Sanghoon Lee ,  Hyunyong Go ,  Sunggil Kim ,  Kyong-Won An ,  Woosung Lee ,  Yongseok Cho

IPC分类号： H01L29/78 ,  H01L27/108 ,  H01L29/66 ,  H01L29/792 ,  H01L27/115

CPC分类号： H01L27/10855 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/7926 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a method of fabricating a semiconductor device, sacrificial layer patterns are formed by leaving portions of sacrificial layers, instead of completely removing the sacrificial layers. Thus, the reliability of the semiconductor device may be increased, and the process of manufacturing the same may be simplified.