HBM with in-memory cache manager
    72.
    发明授权

    公开(公告)号:US10180906B2

    公开(公告)日:2019-01-15

    申请号:US15272339

    申请日:2016-09-21

    Abstract: A system and method for using high bandwidth memory as cache memory. A high bandwidth memory may include a logic die, and, stacked on the logic die, a plurality of dynamic read-only memory dies. The logic die may include a cache manager, that may interface to external systems through an external interface conforming to the JESD235A standard, and that may include an address translator, a command translator, and a tag comparator. The address translator may translate each physical address received through the external interface into a tag value, a tag address in the stack of memory dies, and a data address in the stack of memory dies. The tag comparator may determine whether a cache hit or cache miss has occurred, according to whether the tag value generated by the address translator matches the tag value stored at the tag address.

    TECHNIQUES TO REDUCE READ-MODIFY-WRITE OVERHEAD IN HYBRID DRAM/NAND MEMORY

    公开(公告)号:US20180293175A1

    公开(公告)日:2018-10-11

    申请号:US15662072

    申请日:2017-07-27

    Abstract: A method of choosing a cache line of a plurality of cache lines of data for eviction from a frontend memory, the method including assigning a baseline replacement score to each way of a plurality of ways of a cache, the ways respectively storing the cache lines, assigning a validity score to each way based on a degree of validity of the cache line stored in each way, assigning an eviction decision score to each way based on a function of the baseline replacement score for the way and the validity score for the way, and choosing a cache line of the way having a highest eviction decision score as the cache line for eviction.

    Smart in-module refresh for DRAM
    75.
    发明授权

    公开(公告)号:US09761296B2

    公开(公告)日:2017-09-12

    申请号:US15299445

    申请日:2016-10-20

    Abstract: A memory (1205) is disclosed. The memory (1205) can includes a stack of dynamic Random Access Memory (DRAM) cores (1210, 1215, 1220, 1225) in a three-dimensional stacked memory architecture (1230). Each of the DRAM cores (1210, 1215, 1220, 1225) can include a plurality of banks (205-1, 205-2, 205-3, 205-4) to store data. The memory (1205) can also include logic layer (1235) which can include an interface (1305) to connect the memory (1205) with a processor (120). The logic layer (1235) can also include a refresh engine (115) that can be used to refresh one of the plurality of banks (205-1, 205-2, 205-3, 205-4) and a Smart Refresh Component (305) that can advise the refresh engine (115) which bank to refresh using an out-of-order per-bank refresh. The Smart Refresh Component (305) can use a logic (415) to identify a farthest bank in the pending transactions in the transaction queue (430) at the time of refresh.

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