Beam profile ellipsometer with rotating compensator

    公开(公告)号:US20070159630A1

    公开(公告)日:2007-07-12

    申请号:US11715584

    申请日:2007-03-08

    Applicant: Jon Opsal

    Inventor: Jon Opsal

    CPC classification number: G01J4/04 G01N21/211

    Abstract: An optical inspection device includes a light source for generating a probe beam. The probe beam is focused onto a sample to create a spread of angles of incidence. After reflecting from the sample, the light is imaged onto a two dimensional array of photodetectors. Prior to reaching the detector array, the beam is passed through a rotating compensator. A processor functions to evaluate the sample by analyzing the output of the photodetectors lying along one or more azimuthal angles and at different compensator positions.

    Optical scatterometry of asymmetric lines and structures
    72.
    发明授权
    Optical scatterometry of asymmetric lines and structures 有权
    不对称线和结构的光散射

    公开(公告)号:US07061627B2

    公开(公告)日:2006-06-13

    申请号:US10385863

    申请日:2003-03-11

    CPC classification number: G03F7/70625 G03F7/70633

    Abstract: A method for analyzing asymmetric structures (including isolated and periodic structures) includes a split detector for use in a broadband spectrometer. The split has detector has separate right and left halves. By independently measuring and comparing the right and left scattered rays, information about asymmetries can be determined.

    Abstract translation: 用于分析不对称结构(包括隔离和周期性结构)的方法包括用于宽带光谱仪的分离检测器。 分体检测器具有单独的左右两半。 通过独立测量和比较右和左散射光线,可以确定关于不对称性的信息。

    Real time analysis of periodic structures on semiconductors
    73.
    发明申请
    Real time analysis of periodic structures on semiconductors 有权
    半导体周期性结构的实时分析

    公开(公告)号:US20050251350A1

    公开(公告)日:2005-11-10

    申请号:US11177699

    申请日:2005-07-08

    Abstract: A system for characterizing geometric structures formed on a sample on a real time basis is disclosed. A multi-parameter measurement module generates output signals as a function of either wavelength or angle of incidence. The output signals are supplied to a parallel processor. The processor creates an initial theoretical model and then calculates the theoretical optical response of that sample. The calculated optical response is compared to measured values. Based on the comparison, the model configuration is modified to be closer to the actual measured structure. The processor recalculates the optical response of the modified model and compares the result to the measured data. This process is repeated in an iterative manner until a best fit is achieved. The steps of calculating the optical response of the model is distributed to the processors as a function of wavelength or angle of incidence so these calculations can be performed in parallel.

    Abstract translation: 公开了一种在实时基础上表征样品上形成的几何结构的系统。 多参数测量模块产生作为波长或入射角的函数的输出信号。 输出信号被提供给并行处理器。 处理器创建初始理论模型,然后计算该样本的理论光学响应。 将计算出的光学响应与测量值进行比较。 基于比较,模型配置被修改为更接近实际的测量结构。 处理器重新计算修改模型的光学响应,并将结果与​​测量数据进行比较。 以迭代的方式重复该过程,直到达到最佳拟合。 计算模型的光学响应的​​步骤作为波长或入射角分布到处理器,因此可以并行执行这些计算。

    Method for determining ion concentration and energy of shallow junction implants

    公开(公告)号:US20050140976A1

    公开(公告)日:2005-06-30

    申请号:US11002175

    申请日:2004-12-02

    CPC classification number: G01N21/211 G01N21/171

    Abstract: A method is disclosed for measuring the dose and energy level of ion implants forming a shallow junction in a semiconductor sample. In the method, two independent measurements of the sample are made. The first measurement monitors the response of the sample to periodic excitation. In the illustrated embodiment, the modulated optical reflectivity of a reflected probe beam is monitored to provide information related to the generation of thermal and/or plasma waves in the sample. A second spectroscopic measurement is also performed. This measurement could be either a spectroscopic reflectometry measurement or a spectroscopic ellipsometry measurement. The data from the two measurements are combined in a manner to yield information about both the dose (concentration) of the dopants as well as the energy used to inject the dopants in the semiconductor lattice. The method will useful in controlling the formation of shallow junctions.

    Detector configurations for optical metrology
    75.
    发明申请
    Detector configurations for optical metrology 有权
    用于光学计量的检测器配置

    公开(公告)号:US20050105089A1

    公开(公告)日:2005-05-19

    申请号:US10985494

    申请日:2004-11-10

    Applicant: Jon Opsal

    Inventor: Jon Opsal

    CPC classification number: G01B11/0641 G01J4/04 G01N21/211 G01N2021/213

    Abstract: An apparatus is disclosed for obtaining ellipsometric measurements from a sample. A probe beam is focused onto the sample to create a spread of angles of incidence. The beam is passed through a quarter waveplate retarder and a polarizer. The reflected beam is measured by a detector. In one preferred embodiment, the detector includes eight radially arranged segments, each segment generating an output which represents an integration of multiple angle of incidence. A processor manipulates the output from the various segments to derive ellipsometric information.

    Abstract translation: 公开了一种用于从样品获得椭偏测量的装置。 探针光束聚焦在样品上以产生入射角的扩展。 光束通过四分之一波片延迟器和偏振器。 反射光束由检测器测量。 在一个优选实施例中,检测器包括八个径向布置的段,每个段产生表示多个入射角的积分的输出。 处理器处理来自各个段的输出以导出椭偏信息。

    Standardized sample for characterizing the performance of a scatterometer
    76.
    发明申请
    Standardized sample for characterizing the performance of a scatterometer 失效
    用于表征散射仪性能的标准样品

    公开(公告)号:US20050083520A1

    公开(公告)日:2005-04-21

    申请号:US10268375

    申请日:2002-10-09

    CPC classification number: G01N21/211 G01N21/278 G01N21/4785 G01N2021/213

    Abstract: A standardized sample for scatterometry includes four quadrants each including an inner block surrounded by four outer blocks. A pattern of gratings is repeated within each of the blocks using different resolutions and orientations. Each grating within an outer block has a matching grating within the block's pair. A grating and its matching grating are negative images of each other—the pitch and line-size of a grating are equal, respectively to the line size and pitch of the matching grating. The inner block also includes a series of background patterns positioned behind the gratings. These patterns include repeating patterns of hole and repeating line structures. This series of structures cover a large die area, helping to simulate the conditions faced by real-world scatterometers. The various structures feature a high-degree of alignment, allowing rapid verification using SEM or other techniques.

    Abstract translation: 用于散射测量的标准化样本包括四个象限,每个象限包括被四个外部块包围的内部块。 使用不同的分辨率和取向在每个块内重复光栅图案。 外部块中的每个光栅在块的对内具有匹配的光栅。 光栅及其匹配光栅是彼此的负像,光栅的间距和线尺寸分别相等于匹配光栅的线尺寸和间距。 内部块还包括位于光栅之后的一系列背景图案。 这些图案包括孔的重复图案和重复的线结构。 这一系列的结构覆盖了一个大的模具区域,有助于模拟现实世界散射仪面临的条件。 各种结构具有高度的对准,允许使用SEM或其他技术的快速验证。

    CD metrology analysis using green's function

    公开(公告)号:US06867866B1

    公开(公告)日:2005-03-15

    申请号:US10212385

    申请日:2002-08-05

    CPC classification number: G01N21/4788

    Abstract: A method for modeling optical scattering includes an initial step of defining a zero-th order structure (an idealized representation) for a subject including a perturbation domain and a background material. A Green's function and a zero-th order wave function are obtained for the zero-th order structure using rigorous coupled wave analysis (RCWA). A Lippmann-Schwinger equation is constructed including the Green's function, zero-th order wave function and a perturbation function. The Lippmann-Schwinger equation is then evaluated over a selected set of mesh points within the perturbation domain. The resulting linear equations are solved to compute one or more reflection coefficients for the subject.

    Position modulated optical reflectance measurement system for semiconductor metrology
    78.
    发明申请
    Position modulated optical reflectance measurement system for semiconductor metrology 有权
    用于半导体测量的位置调制光反射测量系统

    公开(公告)号:US20050036136A1

    公开(公告)日:2005-02-17

    申请号:US10886110

    申请日:2004-07-07

    CPC classification number: G01N21/9501 G01N21/1717 G01N21/9505

    Abstract: A system for evaluating semiconductor wafers includes illumination sources for generating probe and pump beams. The pump beam is focused on the surface of a sample and a beam steering mechanism is used to modulate the point of focus in a predetermined pattern. The moving pump beam introduces thermal and plasma waves in the sample causing changes in the reflectivity of the surface of the sample. The probe beam is focused within or adjacent to the area illuminated by the pump beam. The reflected probe beam is gathered and used to measure the changes in reflectivity induced by the pump beam. By analyzing changes in reflectivity, a processor is able to deduce structure and chemical details of the sample.

    Abstract translation: 用于评估半导体晶片的系统包括用于产生探针和泵浦光束的照明源。 泵浦光束聚焦在样品的表面上,并且使用光束转向机构以预定图案调制聚焦点。 移动的泵浦光束在样品中引入热和等离子体波,导致样品表面的反射率的变化。 探测光束聚焦在由泵浦光束照射的区域内或附近。 反射的探针束被聚集并用于测量由泵浦光引起的反射率的变化。 通过分析反射率的变化,处理器能够推断样品的结构和化学细节。

    Analysis of isolated and aperiodic structures with simultaneous multiple angle of incidence measurements
    79.
    发明授权
    Analysis of isolated and aperiodic structures with simultaneous multiple angle of incidence measurements 有权
    分析同时进行多重入射角测量的隔离和非周期结构

    公开(公告)号:US06842259B2

    公开(公告)日:2005-01-11

    申请号:US10850491

    申请日:2004-05-20

    CPC classification number: G01B11/24 G01B11/00 G01B11/02 G01B11/0608

    Abstract: A method is disclosed for evaluating isolated and aperiodic structure on a semiconductor sample. A probe beam from a coherent laser source is focused onto the structure in a manner to create a spread of angles incidence. The reflected light is monitored with an array detector. The intensity or polarization state of the reflected beam as a function of radial position within the beam is measured. Each measurement includes both specularly reflected light as well as light that has been scattered from the aperiodic structure into that detection position. The resulting output is evaluated using an aperiodic analysis to determine the geometry of the structure.

    Abstract translation: 公开了一种用于评估半导体样品上的隔离和非周期结构的方法。 来自相干激光源的探测光束以一定的角度入射的方式聚焦到结构上。 用阵列检测器监测反射光。 测量作为光束内的径向位置的函数的反射光束的强度或极化状态。 每个测量包括镜面反射光以及从非周期结构散射到该检测位置的光。 使用非周期性分析来评估所得到的输出以确定结构的几何形状。

    Calibration and alignment of X-ray reflectometric systems
    80.
    发明授权
    Calibration and alignment of X-ray reflectometric systems 有权
    X射线反射测量系统的校准和对准

    公开(公告)号:US06768785B2

    公开(公告)日:2004-07-27

    申请号:US10643348

    申请日:2003-08-19

    CPC classification number: G01N23/20

    Abstract: The present invention relates to the calibration and alignment of an X-ray reflectometry (“XRR”) system for measuring thin films. An aspect of the present invention describes a method for accurately determining C0 for each sample placement and for finding the incident X-ray intensity corresponding to each pixel of a detector array and thus permitting an amplitude calibration of the reflectometer system. Another aspect of the present invention relates to a method for aligning an angle-resolved X-ray reflectometer that uses a focusing optic, which may preferably be a Johansson crystal. Another aspect of the present invention is to validate the focusing optic. Another aspect of the present invention relates to the alignment of the focusing optic with the X-ray source. Another aspect of the present invention concerns the correction of measurements errors caused by the tilt or slope of the sample. Yet another aspect of the present invention concerns the calibration of the vertical position of the sample.

    Abstract translation: 本发明涉及用于测量薄膜的X射线反射测量(“XRR”)系统的校准和对准。 本发明的一个方面描述了一种用于准确地确定每个样本放置的C0并且用于找到对应于检测器阵列的每个像素的入射X射线强度并因此允许反射计系统的幅度校准的方法。 本发明的另一方面涉及一种用于对准使用聚焦光学元件的角度分辨X射线反射计的方法,其可以优选地是约翰逊晶体。 本发明的另一方面是验证聚焦光学元件。 本发明的另一方面涉及聚焦光学元件与X射线源的对准。 本发明的另一方面涉及由样品的倾斜或斜率引起的测量误差的校正。 本发明的另一方面涉及对样品的垂直位置的校准。

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