Abstract:
An optical inspection device includes a light source for generating a probe beam. The probe beam is focused onto a sample to create a spread of angles of incidence. After reflecting from the sample, the light is imaged onto a two dimensional array of photodetectors. Prior to reaching the detector array, the beam is passed through a rotating compensator. A processor functions to evaluate the sample by analyzing the output of the photodetectors lying along one or more azimuthal angles and at different compensator positions.
Abstract:
A method for analyzing asymmetric structures (including isolated and periodic structures) includes a split detector for use in a broadband spectrometer. The split has detector has separate right and left halves. By independently measuring and comparing the right and left scattered rays, information about asymmetries can be determined.
Abstract:
A system for characterizing geometric structures formed on a sample on a real time basis is disclosed. A multi-parameter measurement module generates output signals as a function of either wavelength or angle of incidence. The output signals are supplied to a parallel processor. The processor creates an initial theoretical model and then calculates the theoretical optical response of that sample. The calculated optical response is compared to measured values. Based on the comparison, the model configuration is modified to be closer to the actual measured structure. The processor recalculates the optical response of the modified model and compares the result to the measured data. This process is repeated in an iterative manner until a best fit is achieved. The steps of calculating the optical response of the model is distributed to the processors as a function of wavelength or angle of incidence so these calculations can be performed in parallel.
Abstract:
A method is disclosed for measuring the dose and energy level of ion implants forming a shallow junction in a semiconductor sample. In the method, two independent measurements of the sample are made. The first measurement monitors the response of the sample to periodic excitation. In the illustrated embodiment, the modulated optical reflectivity of a reflected probe beam is monitored to provide information related to the generation of thermal and/or plasma waves in the sample. A second spectroscopic measurement is also performed. This measurement could be either a spectroscopic reflectometry measurement or a spectroscopic ellipsometry measurement. The data from the two measurements are combined in a manner to yield information about both the dose (concentration) of the dopants as well as the energy used to inject the dopants in the semiconductor lattice. The method will useful in controlling the formation of shallow junctions.
Abstract:
An apparatus is disclosed for obtaining ellipsometric measurements from a sample. A probe beam is focused onto the sample to create a spread of angles of incidence. The beam is passed through a quarter waveplate retarder and a polarizer. The reflected beam is measured by a detector. In one preferred embodiment, the detector includes eight radially arranged segments, each segment generating an output which represents an integration of multiple angle of incidence. A processor manipulates the output from the various segments to derive ellipsometric information.
Abstract:
A standardized sample for scatterometry includes four quadrants each including an inner block surrounded by four outer blocks. A pattern of gratings is repeated within each of the blocks using different resolutions and orientations. Each grating within an outer block has a matching grating within the block's pair. A grating and its matching grating are negative images of each other—the pitch and line-size of a grating are equal, respectively to the line size and pitch of the matching grating. The inner block also includes a series of background patterns positioned behind the gratings. These patterns include repeating patterns of hole and repeating line structures. This series of structures cover a large die area, helping to simulate the conditions faced by real-world scatterometers. The various structures feature a high-degree of alignment, allowing rapid verification using SEM or other techniques.
Abstract:
A method for modeling optical scattering includes an initial step of defining a zero-th order structure (an idealized representation) for a subject including a perturbation domain and a background material. A Green's function and a zero-th order wave function are obtained for the zero-th order structure using rigorous coupled wave analysis (RCWA). A Lippmann-Schwinger equation is constructed including the Green's function, zero-th order wave function and a perturbation function. The Lippmann-Schwinger equation is then evaluated over a selected set of mesh points within the perturbation domain. The resulting linear equations are solved to compute one or more reflection coefficients for the subject.
Abstract:
A system for evaluating semiconductor wafers includes illumination sources for generating probe and pump beams. The pump beam is focused on the surface of a sample and a beam steering mechanism is used to modulate the point of focus in a predetermined pattern. The moving pump beam introduces thermal and plasma waves in the sample causing changes in the reflectivity of the surface of the sample. The probe beam is focused within or adjacent to the area illuminated by the pump beam. The reflected probe beam is gathered and used to measure the changes in reflectivity induced by the pump beam. By analyzing changes in reflectivity, a processor is able to deduce structure and chemical details of the sample.
Abstract:
A method is disclosed for evaluating isolated and aperiodic structure on a semiconductor sample. A probe beam from a coherent laser source is focused onto the structure in a manner to create a spread of angles incidence. The reflected light is monitored with an array detector. The intensity or polarization state of the reflected beam as a function of radial position within the beam is measured. Each measurement includes both specularly reflected light as well as light that has been scattered from the aperiodic structure into that detection position. The resulting output is evaluated using an aperiodic analysis to determine the geometry of the structure.
Abstract:
The present invention relates to the calibration and alignment of an X-ray reflectometry (“XRR”) system for measuring thin films. An aspect of the present invention describes a method for accurately determining C0 for each sample placement and for finding the incident X-ray intensity corresponding to each pixel of a detector array and thus permitting an amplitude calibration of the reflectometer system. Another aspect of the present invention relates to a method for aligning an angle-resolved X-ray reflectometer that uses a focusing optic, which may preferably be a Johansson crystal. Another aspect of the present invention is to validate the focusing optic. Another aspect of the present invention relates to the alignment of the focusing optic with the X-ray source. Another aspect of the present invention concerns the correction of measurements errors caused by the tilt or slope of the sample. Yet another aspect of the present invention concerns the calibration of the vertical position of the sample.