公开(公告)号：US20210335929A1

公开(公告)日：2021-10-28

申请号：US16333340

申请日：2018-11-16

Applicant: Hefei Xinsheng Optoelectronics Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Wei Li ,  Jingjing Xia ,  Bin Zhou ,  Jun Liu ,  Yingbin Hu ,  Guangyao Li ,  Wei Song ,  Tongshang Su

IPC: H01L27/32 ,  H01L51/56

Abstract: A display substrate includes a base substrate; and a single pixel definition layer on the base substrate defining a plurality of subpixel apertures. The single pixel definition layer includes a plurality of hydrophobic particles dispersed in a main body for enhancing hydrophobicity of a portion of the single pixel definition layer.

公开(公告)号：US11087978B2

公开(公告)日：2021-08-10

申请号：US16509542

申请日：2019-07-12

Applicant: Hefei Xinsheng Optoelectronics Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Tongshang Su ,  Dongfang Wang ,  Jun Liu ,  Qinghe Wang ,  Wuxia Fu ,  Liangchen Yan ,  Guangcai Yuan

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/56 ,  H01L27/12 ,  H01L29/24 ,  H01L29/786

Abstract: The present disclosure provides an oxide semiconductor layer and a preparation method thereof, device, substrate, and means, and belongs to the field of semiconductor technologies. The method includes: forming an oxide semiconductor layer having multiply types of regions on a substrate, at least two types of the multiple types of regions having different thicknesses, and adjusting an oxygen content of at least one type of regions in the multiply types of regions, so that the oxygen content and the thickness in the multiple types of regions are positively correlated.

公开(公告)号：US11081501B2

公开(公告)日：2021-08-03

申请号：US16395660

申请日：2019-04-26

Applicant: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei Song ,  Ce Zhao ,  Bin Zhou ,  Dongfang Wang ,  Yuankui Ding ,  Jun Liu ,  Yingbin Hu ,  Wei Li

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/3213 ,  H01L29/40 ,  H01L29/66 ,  H01L21/02 ,  H01L21/473 ,  H01L21/44 ,  H01L29/417

Abstract: A thin film transistor and a method of fabricating the same, an array substrate and a method of fabricating the same, and a display device are provided, the method of fabricating a thin film transistor includes: forming an active layer on a base substrate; forming a metal layer on the active layer; and processing the metal layer to form a source electrode, a drain electrode, and a metal oxide layer, the metal oxide layer covering the source electrode, the drain electrode, and the active layer, the source electrode and the drain electrode being spaced apart and insulated from each other by the metal oxide layer.

公开(公告)号：US20210066353A1

公开(公告)日：2021-03-04

申请号：US16928562

申请日：2020-07-14

Applicant: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Tongshang Su ,  Dongfang Wang ,  Jun Liu ,  Qinghe Wang ,  Jun Wang ,  Ning Liu ,  Guangyao Li

IPC: H01L27/12 ,  H01L23/552

Abstract: An array substrate and a display device are provided in embodiments of the present disclosure. The array substrate includes a base substrate, a buffer layer, an active layer, a gate insulating layer, a gate electrode, an interlayer insulating layer, a source-drain electrode electrically conductive layer, a passivation layer, and a first light shielding layer. The first light shielding layer is disposed on a side of the passivation layer facing away from the interlayer insulating layer. An orthographic projection of the first light shielding layer on the base substrate at least partially overlaps with an orthographic projection of the active layer on the base substrate, and the first light shielding layer is formed by a photoresist material.

公开(公告)号：US10710261B2

公开(公告)日：2020-07-14

申请号：US15797299

申请日：2017-10-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Bing Hu ,  Jun Liu ,  Jinlong Wu ,  Qingguo Peng

IPC: B23P19/00 ,  B26D7/01 ,  B26D7/20 ,  F16B19/02

Abstract: The present disclosure provides a locating pin, a working platform and a locating method. The locating pin includes a housing, a movable mechanism, a securing mechanism and a guide rod, wherein the housing has a first cavity with an opening that has an axis therethrough, the movable mechanism is at least partially arranged in the first cavity and configured to be movable along the axis, the securing mechanism is secured with respect to the housing and configured to limit movement of the movable mechanism along the axis, the guide rod includes a guide rod body and configured to extend out of the first cavity through the opening with the movement of the movable mechanism, the guide rod body having a first end and a second end opposite to each other, wherein the first end is secured to the movable mechanism, and the second end includes a locating portion.

公开(公告)号：US20200027729A1

公开(公告)日：2020-01-23

申请号：US16509542

申请日：2019-07-12

Applicant: Hefei Xinsheng Optoelectronics Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Tongshang Su ,  Dongfang Wang ,  Jun Liu ,  Qinghe Wang ,  Wuxia Fu ,  Liangchen Yan ,  Guangcai Yuan

IPC: H01L21/02 ,  H01L27/12 ,  H01L29/24 ,  C23C16/40 ,  C23C16/56

Abstract: The present disclosure provides an oxide semiconductor layer and a preparation method thereof, device, substrate, and means, and belongs to the field of semiconductor technologies. The method includes: forming an oxide semiconductor layer having multiply types of regions on a substrate, at least two types of the multiple types of regions having different thicknesses, and adjusting an oxygen content of at least one type of regions in the multiply types of regions, so that the oxygen content and the thickness in the multiple types of regions are positively correlated.