公开(公告)号：US20080160170A1

公开(公告)日：2008-07-03

申请号：US11617348

申请日：2006-12-28

Applicant: Timothy Miller ,  Edmund J. Winder ,  Richard J. Hetel ,  Harold M. Persing ,  Vikram Singh

Inventor： Timothy Miller ,  Edmund J. Winder ,  Richard J. Hetel ,  Harold M. Persing ,  Vikram Singh

IPC: C23C14/02 ,  B05C11/00

CPC classification number: H01J37/32082 ,  H01J37/32018 ,  H01J37/32412 ,  H01J37/32422 ,  H01J37/32642 ,  H01J37/32935 ,  H01J37/3299

Abstract: A technique for using an improved shield ring in plasma-based ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus and method for plasma-based ion implantation, such as radio frequency plasma doping (RF-PLAD). The apparatus and method may comprise a shield ring positioned on a same plane as and around a periphery of a target wafer, wherein the shield ring comprises an aperture-defining device for defining an area of at least one aperture, a Faraday cup positioned under the at least one aperture, and dose count electronics connected the Faraday cup for calculating ion dose rate. The at least one aperture may comprise at least one of a circular, arc-shaped, slit-shaped, ring-shaped, rectangular, triangular, and elliptical shape. The aperture-defining device may comprise at least one of silicon, silicon carbide, carbon, and graphite.

Abstract translation: 公开了一种在等离子体离子注入中使用改进的屏蔽环的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于基于等离子体的离子注入的装置和方法，例如射频等离子体掺杂（RF-PLAD）。 该装置和方法可以包括一个屏蔽环，该屏蔽环与目标晶片的周边定位在同一平面上，其中屏蔽环包括用于限定至少一个孔的区域的孔限定装置，位于下方的法拉第杯 至少一个孔径和剂量计数电子元件连接法拉第杯以计算离子剂量率。 至少一个孔可以包括圆形，弧形，狭缝状，环形，矩形，三角形和椭圆形中的至少一个。 孔限定装置可以包括硅，碳化硅，碳和石墨中的至少一种。

公开(公告)号：US20080044257A1

公开(公告)日：2008-02-21

申请号：US11770220

申请日：2007-06-28

Applicant: Jonathan Gerald ENGLAND ,  Richard Stephen Muka ,  Edwin A. Arevalo ,  Ziwei Fang ,  Vikram Singh

Inventor： Jonathan Gerald ENGLAND ,  Richard Stephen Muka ,  Edwin A. Arevalo ,  Ziwei Fang ,  Vikram Singh

IPC: H01L21/677

CPC classification number: H01L21/67115 ,  H01J37/20 ,  H01J2237/2001 ,  H01J2237/31701 ,  H01J2237/336 ,  H01L21/67063 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67213 ,  H01L21/6831

Abstract: Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen including: a wafer clamping mechanism to secure the wafer onto the platen and to provide a predetermined thermal contact between the wafer and the platen, and one or more heating elements to pre-heat and maintain the platen in a predetermined temperature range above room temperature. The apparatus may also comprise a post-cooling station to cool down the wafer after ion implantation. The apparatus may further comprise a wafer handling assembly to load the wafer onto the pre-heated platen and to remove the wafer from the platen to the post-cooling station.

Abstract translation: 公开了用于温度控制离子注入的技术。 在一个特定的示例性实施例中，可以将技术实现为用于温度控制的离子注入的装置。 该设备可以包括在离子注入期间将晶片保持在单晶片处理室中的压板，压板包括：晶片夹持机构，用于将晶片固定到压板上并在晶片和压板之间提供预定的热接触， 以及一个或多个加热元件以预热并将压板保持在高于室温的预定温度范围内。 该装置还可以包括后冷却站，以在离子注入之后冷却晶片。 该设备还可以包括晶片处理组件，以将晶片加载到预热台板上，并将晶片从压板移除到后冷却站。

公开(公告)号：US20070087574A1

公开(公告)日：2007-04-19

申请号：US11163307

申请日：2005-10-13

Applicant: Atul Gupta ,  Vikram Singh ,  Timothy Miller ,  Edmund Winder

Inventor： Atul Gupta ,  Vikram Singh ,  Timothy Miller ,  Edmund Winder

IPC: H01L21/31 ,  H01L21/469 ,  B05C11/00

CPC classification number: H01J37/32623 ,  H01J37/32412 ,  H01J37/32697 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/26526 ,  H01L21/26586 ,  H01L29/66803

Abstract: A method of doping includes depositing a layer of dopant material on nonplanar and planar features of a substrate. Inert ions are generated from an inert feed gas. The inert ions are extracted towards the substrate where they physically knock the dopant material into both the planar and nonplanar features of the substrate.

Abstract translation: 掺杂的方法包括在衬底的非平面和平面特征上沉积掺杂剂材料层。 惰性进料气体产生惰性离子。 向衬底提取惰性离子，在衬底上物理地将掺杂剂材料敲入衬底的平面和非平面特征。

公开(公告)号：US20060063360A1

公开(公告)日：2006-03-23

申请号：US11227079

申请日：2005-09-16

Applicant: Vikram Singh ,  Edmund Winder ,  Harold Persing ,  Timothy Miller ,  Ziwei Fang ,  Atul Gupta

Inventor： Vikram Singh ,  Edmund Winder ,  Harold Persing ,  Timothy Miller ,  Ziwei Fang ,  Atul Gupta

IPC: H01L21/04

CPC classification number: H01L21/2236 ,  H01J37/32082 ,  H01J37/32412 ,  H01L21/26513

Abstract: A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coupled to the reaction chamber, wherein the source is capable of supplying a substantially pure form of pentaborane into the reaction chamber. The apparatus may further comprise a power supply that is configured to energize the pentaborane in the reaction chamber sufficiently to produce a plasma discharge having boron-bearing ions.

Abstract translation: 公开了硼注入技术。 在一个特定的示例性实施例中，该技术可以由用于硼注入的装置来实现。 该装置可以包括反应室。 该装置还可以包含耦合到反应室的五硼烷的源，其中源能够将基本上纯的形式的五硼烷供应到反应室中。 该装置还可以包括电源，其被配置为充分激发反应室中的五硼烷以产生具有含硼离子的等离子体放电。

公开(公告)号：US06468384B1

公开(公告)日：2002-10-22

申请号：US09710083

申请日：2000-11-09

Applicant: Vikram Singh ,  Robert J. Whiting ,  Paul K. Shufflebotham ,  Ajay Saproo

Inventor： Vikram Singh ,  Robert J. Whiting ,  Paul K. Shufflebotham ,  Ajay Saproo

IPC: C23F100

CPC classification number: H01L21/67248 ,  H01J37/3299 ,  H01J2237/2001 ,  H01L21/6831

Abstract: The present invention provides plasma processing systems and methods for providing a set-point temperature for substrates during plasma processing by controlling clamping force or RF power. The plasma processing system includes a plasma chamber, a controller, and an electrostatic power supply. The plasma chamber is arranged to receive an RF power and a source gas for producing plasma. The plasma chamber includes an electrostatic chuck for clamping a substrate in place during plasma processing. The electrostatic chuck includes an electrode and a sensor, which is arranged to monitor temperature of the substrate being processed. The controller is coupled to the sensor to receive the substrate temperature and is configured to generate a control signal for driving the substrate temperature to the set-point temperature. The electrostatic power supply is coupled between the controller and the electrode in the electrostatic chuck. The electrostatic power supply receives the control signal from the controller and generates a voltage adapted to clamp the substrate with a clamping force. In this configuration, the electrostatic power supply provides the voltage to the electrode to clamp the substrate such that the substrate temperature is driven to the set-point temperature.

Abstract translation: 本发明提供等离子体处理系统和方法，用于通过控制夹紧力或RF功率在等离子体处理期间提供基板的设定点温度。 等离子体处理系统包括等离子体室，控制器和静电电源。 等离子体室被布置成接收用于产生等离子体的RF功率和源气体。 等离子体室包括用于在等离子体处理期间将衬底夹持就位的静电吸盘。 静电卡盘包括电极和传感器，其被设置为监测被处理的基板的温度。 控制器耦合到传感器以接收衬底温度，并且被配置为产生用于将衬底温度驱动到设定点温度的控制信号。 静电电源连接在控制器和静电吸盘中的电极之间。 静电电源接收来自控制器的控制信号，并产生适合于用夹紧力夹紧衬底的电压。 在该结构中，静电电源向电极提供电压以夹紧基板，使得基板温度被驱动到设定点温度。

公开(公告)号：US06042687A

公开(公告)日：2000-03-28

申请号：US885346

申请日：1997-06-30

Applicant: Vikram Singh ,  Brian McMillin ,  Tom Ni ,  Michael Barnes ,  Richard Yang

Inventor： Vikram Singh ,  Brian McMillin ,  Tom Ni ,  Michael Barnes ,  Richard Yang

IPC: H01J37/32 ,  H05H1/00 ,  H01L21/00

CPC classification number: H01J37/3244 ,  H01J37/321

Abstract: A plasma processing system and method for processing substrates such as by chemical vapor deposition or etching. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a primary gas supply supplying a primary gas such as process gas into the chamber, a secondary gas supply supplying a secondary gas such as a substantially inert, a substrate passivating or a reactant scavenging gas into the chamber, and an RF energy source such as a planar coil which inductively couples RF energy through the dielectric member and into the chamber to energize the primary gas into a plasma state. The secondary gas is concentrated near the periphery of the substrate, improving etching/deposition uniformity across the substrate surface.

Abstract translation: 一种等离子体处理系统和方法，用于通过化学气相沉积或蚀刻来处理衬底。 该系统包括等离子体处理室，用于在处理室内支撑衬底的衬底支撑件，具有面向衬底支撑件的内表面的电介质构件，形成处理室壁的电介质构件， 将诸如工艺气体的气体引入室中，将诸如基本惰性的二次气体，基底钝化或反应物清除气体的二次气体供给到腔室中，以及RF能量源，例如平面线圈，其感应耦合RF能量 通过电介质构件并进入腔室以将主气体激发成等离子体状态。 二次气体集中在衬底的周边附近，从而提高衬底表面的蚀刻/沉积均匀性。

公开(公告)号：US5968275A

公开(公告)日：1999-10-19

申请号：US882222

申请日：1997-06-25

Applicant: Changhun Lee ,  Vikram Singh ,  Yun-Yen Jack Yang

Inventor： Changhun Lee ,  Vikram Singh ,  Yun-Yen Jack Yang

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  C23C16/00

CPC classification number: H01L21/02071 ,  H01J37/32633 ,  H01L21/31138

Abstract: A plasma processing system configured for use in processing a substrate after metal etching. The substrate includes a layer of photoresist disposed thereon. The plasma processing system includes a plasma generating region and a baffle plate disposed between the plasma generating region and the substrate. The baffle plate includes a central blocked portion disposed in a center region of the baffle plate. The baffle plate further includes an annular porous portion surrounding the central blocked portion. The annular porous portion includes a plurality of through holes configured for permitting a H.sub.2 O plasma generated in the plasma generating region to pass through the holes to reach a surface of the substrate. The plasma processing system also includes a chuck disposed below the baffle plate to support the substrate during the processing.

Abstract translation: 一种等离子体处理系统，其配置用于在金属蚀刻之后处理衬底。 基板包括设置在其上的光致抗蚀剂层。 等离子体处理系统包括等离子体产生区域和设置在等离子体产生区域和衬底之间的挡板。 挡板包括设置在挡板中心区域的中央阻挡部分。 挡板还包括围绕中心阻塞部分的环形多孔部分。 环形多孔部分包括多个通孔，其构造成允许在等离子体产生区域中产生的H 2 O等离子体通过孔到达衬底的表面。 等离子体处理系统还包括设置在挡板下方以在处理期间支撑基板的卡盘。

公开(公告)号：USPP10935P

公开(公告)日：1999-06-01

申请号：US855768

申请日：1997-04-22

Applicant: Sushil Kumar ,  Bali Ram Tyagi ,  Janak Raj Bahl ,  Hari Singh ,  Vikram Singh ,  Ram Ujagir ,  Suman Preet Singh Khanuja ,  Ajit Kumar Shasany ,  Ram Sajivan Shukla ,  Abdul Sattar ,  Dwijendra Singh ,  Akhtar Haseeb ,  Vijay Pal Singh ,  Paltoo Ram ,  Kambod Singh ,  Saudan Singh ,  Surendra Pratap Singh ,  Nirmal Kumar Patra ,  Mansoor Alam ,  Arif Ali Naqvi ,  Muni Ram ,  Krishan Kumar Agarwal ,  Kailash Singh

Inventor： Sushil Kumar ,  Bali Ram Tyagi ,  Janak Raj Bahl ,  Hari Singh ,  Vikram Singh ,  Ram Ujagir ,  Suman Preet Singh Khanuja ,  Ajit Kumar Shasany ,  Ram Sajivan Shukla ,  Abdul Sattar ,  Dwijendra Singh ,  Akhtar Haseeb ,  Vijay Pal Singh ,  Paltoo Ram ,  Kambod Singh ,  Saudan Singh ,  Surendra Pratap Singh ,  Nirmal Kumar Patra ,  Mansoor Alam ,  Arif Ali Naqvi ,  Muni Ram ,  Krishan Kumar Agarwal ,  Kailash Singh

Abstract: A new and distinct hybrid plant named `Himalaya` (Mentha arvensis) characterized by its higher yield of oil which is rich in menthol, improved regeneration potential, vigorous growth, deep green broad thick leaves, pinkish white flowers and tolerance to rust such as alternaria leaf blight, corynespora leaf spot and powdery mildew.

公开(公告)号：US08507372B2

公开(公告)日：2013-08-13

申请号：US13480204

申请日：2012-05-24

Applicant: George D. Papasouliotis ,  Vikram Singh ,  Heyun Yin

Inventor： George D. Papasouliotis ,  Vikram Singh ,  Heyun Yin

IPC: H01L21/425

CPC classification number: H01L21/2236 ,  H01L29/66803

Abstract: A technique for conformal processing of a substrate having a non-planar surface is disclosed. The technique includes several stages. In a first stage, some surfaces of the substrate are effectively processed. During a second stage, these surfaces are treated to limit or eliminate further processing of these surfaces. During a third stage, other surfaces of the substrate are processed. In some applications, the surfaces that are perpendicular, or substantially perpendicular to the flow of particles are processed in the first and second stages, while other surfaces are processed in the third stage. In some embodiments, the second stage includes the deposition of a film on the substrate.

Abstract translation: 公开了一种用于对具有非平面表面的衬底进行保形加工的技术。 该技术包括几个阶段。 在第一阶段中，有效地处理衬底的某些表面。 在第二阶段期间，处理这些表面以限制或消除这些表面的进一步加工。 在第三阶段期间，处理衬底的其它表面。 在一些应用中，在第一和第二阶段中处理垂直或基本垂直于颗粒流的表面，而在第三阶段处理其它表面。 在一些实施例中，第二阶段包括在衬底上沉积膜。

公开(公告)号：US08450193B2

公开(公告)日：2013-05-28

申请号：US11770220

申请日：2007-06-28

Applicant: Jonathan Gerald England ,  Richard Stephen Muka ,  Edwin A. Arevalo ,  Ziwei Fang ,  Vikram Singh

Inventor： Jonathan Gerald England ,  Richard Stephen Muka ,  Edwin A. Arevalo ,  Ziwei Fang ,  Vikram Singh

IPC: H01L21/04

CPC classification number: H01L21/67115 ,  H01J37/20 ,  H01J2237/2001 ,  H01J2237/31701 ,  H01J2237/336 ,  H01L21/67063 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67213 ,  H01L21/6831

Abstract: Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen including: a wafer clamping mechanism to secure the wafer onto the platen and to provide a predetermined thermal contact between the wafer and the platen, and one or more heating elements to pre-heat and maintain the platen in a predetermined temperature range above room temperature. The apparatus may also comprise a post-cooling station to cool down the wafer after ion implantation. The apparatus may further comprise a wafer handling assembly to load the wafer onto the pre-heated platen and to remove the wafer from the platen to the post-cooling station.

Abstract translation: 公开了用于温度控制离子注入的技术。 在一个特定的示例性实施例中，可以将技术实现为用于温度控制的离子注入的装置。 该设备可以包括在离子注入期间将晶片保持在单晶片处理室中的压板，压板包括：晶片夹紧机构，用于将晶片固定到压板上并在晶片和压板之间提供预定的热接触， 以及一个或多个加热元件以预热并将压板保持在高于室温的预定温度范围内。 该装置还可以包括后冷却站，以在离子注入之后冷却晶片。 该设备还可以包括晶片处理组件，以将晶片加载到预热台板上，并将晶片从压板移除到后冷却站。