公开(公告)号：US07094712B2

公开(公告)日：2006-08-22

申请号：US10793818

申请日：2004-03-08

Applicant: Ki-Vin Im ,  Ki-Yeon Park ,  Jae-Hyun Yeo ,  In-Sung Park ,  Seung-Hwan Lee ,  Young-Sun Kim ,  Sung-Tae Kim

Inventor： Ki-Vin Im ,  Ki-Yeon Park ,  Jae-Hyun Yeo ,  In-Sung Park ,  Seung-Hwan Lee ,  Young-Sun Kim ,  Sung-Tae Kim

IPC: H01L21/31

CPC classification number: H01L21/0228 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/31645 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: Disclosed is a method for forming metal oxide dielectric layers, more particularly HfO2 dielectric layers, using an atomic layer deposition (ALD) method in which a series of thin intermediate layers are formed and treated with one or more oxidizers and nitrogents before the next intermediate layer is formed on the substrate. The intermediate oxidation treatments reduce the number of organic contaminants incorporated into the metal oxide layer from the organometallic precursors to produce a dielectric layer having improved current leakage characteristics. The dielectric layers formed in this manner remain susceptible to crystallization if exposed to temperatures much above 550° C., so subsequent semiconductor manufacturing processes should be modified or eliminated to avoid such temperatures or limit the duration at such temperatures to maintain the performance of the dielectric materials.

Abstract translation: 公开了一种使用原子层沉积（ALD）方法形成金属氧化物电介质层，更具体地是HfO 2 电介质层的方法，其中形成一系列薄的中间层并用一个或多个 在下一个中间层之前形成氧化剂和氮。 中间氧化处理减少了从有机金属前体引入到金属氧化物层中的有机污染物的数量，以产生具有改善的电流泄漏特性的电介质层。 如果暴露在高于550℃的温度下，以这种方式形成的电介质层仍然易于结晶，因此随后的半导体制造工艺应当被修改或消除以避免这种温度或限制在这样的温度下的持续时间以保持电介质的性能 材料

公开(公告)号：US06992346B2

公开(公告)日：2006-01-31

申请号：US10807000

申请日：2004-03-23

Applicant: Ki-Chul Kim ,  Young-Sun Kim ,  Gab-Jin Nam ,  Sung-Tae Kim ,  Thomas Jongwan Kwon ,  Han-Mei Choi ,  Jae-Soon Lim

Inventor： Ki-Chul Kim ,  Young-Sun Kim ,  Gab-Jin Nam ,  Sung-Tae Kim ,  Thomas Jongwan Kwon ,  Han-Mei Choi ,  Jae-Soon Lim

IPC: H01L29/096

CPC classification number: H01L21/32051 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10855 ,  H01L27/10894 ,  H01L27/10897 ,  H01L28/91

Abstract: A conductive contact plug extends through an opening in the dielectric layer to contact the substrate and includes a widened pad portion extending onto the dielectric layer adjacent the opening. An ohmic pattern is disposed on the pad portion of the plug, and a barrier pattern is disposed on the ohmic pattern. A concave first capacitor electrode is disposed on the barrier pattern and defines a cavity opening away from the substrate. A capacitor dielectric layer conforms to a surface of the first capacitor electrode and a second capacitor electrode is disposed on the capacitor dielectric layer opposite the first capacitor electrode. Sidewalls of the ohmic pattern, the barrier pattern and the pad portion of the contact plug may be substantially coplanar, and the device may further include an etch stopper layer conforming to at least sidewalls of the ohmic pattern, the barrier pattern and the pad portion of the contact plug. Related fabrication methods are described.

Abstract translation: 导电接触插塞延伸穿过电介质层中的开口以接触衬底并且包括延伸到邻近开口的电介质层上的加宽焊盘部分。 欧姆图案设置在插头的焊盘部分上，并且阻挡图案设置在欧姆图案上。 凹陷的第一电容器电极设置在阻挡图案上并且限定了远离基板的空腔。 电容器电介质层符合第一电容器电极的表面，并且第二电容器电极设置在与第一电容器电极相对的电容器电介质层上。 欧姆图案的侧壁，接触塞的阻挡图案和焊盘部分可以是基本上共面的，并且该器件还可以包括符合至少欧姆图案的侧壁，阻挡图案和焊盘部分的蚀刻停止层 接触插头。 描述相关的制造方法。

公开(公告)号：US20050275812A1

公开(公告)日：2005-12-15

申请号：US11151298

申请日：2005-06-14

Applicant: Sung-tae Kim ,  Jeong-ho Nho

Inventor： Sung-tae Kim ,  Jeong-ho Nho

IPC: G03B21/10 ,  G03B21/00 ,  G03B21/20 ,  H04N9/31

CPC classification number: H04N9/3152 ,  G03B21/20 ,  H04N9/3114

Abstract: A projection system is provided. The projection system includes a light source, a color filter separating light emitted from the light source into colored light, a light-path converter converting a path of the colored light that has passed through the color filter, a lens having a positive refractive power in order to condense the light from the light-path converter, a display device processing the light that has passed through the lens in response to an input signal and forming a color image, and a projection lens unit enlarging and projecting the color image onto a screen.

Abstract translation: 提供投影系统。 投影系统包括光源，将从光源发射的光分成彩色光的滤色器，将通过滤色器的彩色光的路径转换成的光路转换器，具有正折射光焦度的透镜 为了冷凝来自光路转换器的光，显示装置响应于输入信号处理已经通过透镜的光并形成彩色图像，以及投影透镜单元，将彩色图像放大并投影到屏幕上 。

公开(公告)号：US06897106B2

公开(公告)日：2005-05-24

申请号：US10713577

申请日：2003-11-12

Applicant: Ki-Yeon Park ,  Sung-Tae Kim ,  Young-Sun Kim ,  In-Sung Park ,  Jae-Hyun Yeo ,  Ki-Vin Im

Inventor： Ki-Yeon Park ,  Sung-Tae Kim ,  Young-Sun Kim ,  In-Sung Park ,  Jae-Hyun Yeo ,  Ki-Vin Im

IPC: H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  H01L27/108

CPC classification number: H01L28/40 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/31616 ,  H01L21/31645 ,  H01L28/56 ,  H01L28/65 ,  H01L28/75

Abstract: A semiconductor memory device that includes a composite Al2O3/HfO2 dielectric layer with a layer thickness ratio greater than or equal to 1, and a method of manufacturing the capacitor are provided. The capacitor includes a lower electrode, a composite dielectric layer including an Al2O3 dielectric layer and an HfO2 dielectric layer sequentially formed on the lower electrode, the Al2O3 dielectric layer having a thickness greater than or equal to the HfO2 dielectric layer, and an upper electrode formed on the composite dielectric layer. The Al2O3 dielectric layer has a thickness of 30-60 Å. The HfO2 dielectric layer has a thickness of 40 Å or less.

Abstract translation: 一种半导体存储器件，其包括层厚度比大于或等于1的复合Al 2 O 3 / HfO 2 电介质层， 并提供一种制造该电容器的方法。 电容器包括下电极，复合电介质层，其包括依次形成在其上的Al 2 O 3 3电介质层和HfO 2 N 2介电层 下电极，具有大于或等于HfO 2 2电介质层的厚度的Al 2 O 3 3 电介质层，以及形成的上电极 在复合介电层上。 Al 2 O 3介电层具有30-60埃的厚度。 HfO 2 2介电层的厚度为40以下。

公开(公告)号：US06893501B2

公开(公告)日：2005-05-17

申请号：US10320407

申请日：2002-12-17

Applicant: Ki-chul Kim ,  Sung-tae Kim ,  Young-sun Kim ,  Jeong-hee Chung ,  Wan-don Kim ,  Yun-jung Lee ,  Han-mei Choi

Inventor： Ki-chul Kim ,  Sung-tae Kim ,  Young-sun Kim ,  Jeong-hee Chung ,  Wan-don Kim ,  Yun-jung Lee ,  Han-mei Choi

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/316 ,  H01L21/8242 ,  C30B25/04

CPC classification number: H01L28/57 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/02356 ,  H01L21/31637 ,  H01L27/1085 ,  H01L28/65

Abstract: A method for manufacturing a capping layer covering a capacitor of a semiconductor memory device, preferably a metal-insulator-metal (MIM) capacitor, wherein the method includes forming a capacitor having a lower electrode, a dielectric layer and an upper electrode on a semiconductor substrate, forming a capping layer on the capacitor, and crystallizing the dielectric layer. Here, forming the capping layer includes stabilizing for deposition of the capping layer without providing oxygen gas, depositing the capping layer by providing a reaction source for the capping layer; and purging an inside of a reactor for forming the capping layer.

Abstract translation: 一种覆盖半导体存储器件的电容器，优选金属 - 绝缘体 - 金属（MIM）电容器的覆盖层的方法，其中所述方法包括在半导体上形成具有下电极，电介质层和上电极的电容器 衬底，在电容器上形成覆盖层，并使介电层结晶。 这里，形成覆盖层包括在不提供氧气的情况下沉积封盖层的稳定性，通过为封盖层提供反应源沉积覆盖层; 并且清洗用于形成覆盖层的反应器的内部。

公开(公告)号：US06462887B1

公开(公告)日：2002-10-08

申请号：US09672012

申请日：2000-09-29

Applicant: Sung-tae Kim ,  Sung-wook Choi ,  Nae-jin Jo

Inventor： Sung-tae Kim ,  Sung-wook Choi ,  Nae-jin Jo

IPC: G02B1514

CPC classification number: G02B7/10

Abstract: A zoom lens barrel structure of a zoom camera includes a fixed barrel fixed to the camera, a double helicoid ring having first and second helicoid portions having different lead angles, a front lens group support body coupled to the first helicoid portion of the double helicoid ring, a rear lens group support body coupled to the second helicoid portion of the double helicoid ring, and guide means for guiding the front lens group support body and the rear lens group support body to move along the optical axis of the camera, the guide means having a cam portion formed along a path where the rear lens group support body is coupled to the second helicoid portion.

Abstract translation: 变焦摄像机的变焦透镜镜筒结构包括：固定于照相机的固定镜筒，具有第一和第二螺旋部分具有不同引导角的双螺旋形环，前透镜组支撑体，联接到双螺旋环的第一螺旋部分 ，连接到双螺旋环的第二螺旋部分的后透镜组支撑体，以及用于引导前透镜组支撑体和后透镜组支撑体沿着照相机的光轴移动的引导装置，引导装置 具有沿着后透镜组支撑体联接到第二螺旋部分的路径形成的凸轮部分。

公开(公告)号：US06186779B1

公开(公告)日：2001-02-13

申请号：US09334133

申请日：1999-06-15

Applicant: Hae-Moon Choi ,  Sung-Tae Kim ,  Hyun-Kuk Ko ,  Dae-Moon Kim

Inventor： Hae-Moon Choi ,  Sung-Tae Kim ,  Hyun-Kuk Ko ,  Dae-Moon Kim

IPC: F27D500

CPC classification number: H01L21/68721 ,  C30B25/12 ,  C30B31/14 ,  H01L21/68785

Abstract: A clamp holds a semiconductor wafer during an Al reflow process. The clamp is made of a ceramic material, and thereby clamp surface roughening which damages semiconductor wafers and other damaging of the wafer caused by the deformation of the clamp are avoided. A sloped surface of the clamp pad can also reduce the damage on the wafer by reducing the contact area between the clamp pad and the wafer. In addition, the clamp has several features that can reduce heat dissipation from the wafer to outside during the Al reflow. Slots formed on the pad reduce the amount of heat conduction through the clamp, and the polished inner surface of the clamp cap reflects the heat radiated from the wafer back to the wafer.

Abstract translation: 夹具在Al回流焊过程中保持半导体晶片。 夹具由陶瓷材料制成，从而避免了由于夹具的变形而损坏半导体晶片和损坏晶片的表面粗糙化。 夹持垫的倾斜表面还可以通过减小夹紧垫和晶片之间的接触面积来减小晶片上的损坏。 此外，夹具具有几个特征，可以在铝回流期间减少晶片向外部的散热。 形成在垫上的槽减少了通过夹具的热传导量，并且夹持盖的抛光内表面将从晶片辐射的热量反射回晶片。

公开(公告)号：US6077772A

公开(公告)日：2000-06-20

申请号：US270174

申请日：1999-03-16

Applicant: In-Seon Park ,  Sung-Tae Kim ,  Du-Hwan Lee ,  Won-Goo Hur

Inventor： In-Seon Park ,  Sung-Tae Kim ,  Du-Hwan Lee ,  Won-Goo Hur

IPC: H01L21/768 ,  H01L21/4763

CPC classification number: H01L21/76856 ,  H01L21/76843 ,  H01L21/76882

Abstract: A method of forming a metal interconnection includes the steps of forming a first conductive layer on a substrate, and forming an insulating layer on the first conductive layer and on the substrate. A contact hole is formed in the insulating layer thereby exposing a portion of the first conductive layer, a barrier layer is formed on the exposed portion of the first conductive layer in the contact hole, and a thermal treatment is performed on the barrier layer. After the step of performing the thermal treatment, a wetting layer is formed on a sidewall of the contact hole, and a second conductive layer is formed on the barrier layer and on the wetting layer in the contact hole.

Abstract translation: 形成金属互连的方法包括以下步骤：在衬底上形成第一导电层，并在第一导电层和衬底上形成绝缘层。 在绝缘层中形成接触孔，从而露出第一导电层的一部分，在接触孔中的第一导电层的暴露部分上形成阻挡层，并对阻挡层进行热处理。 在进行热处理的步骤之后，在接触孔的侧壁上形成润湿层，并且在阻挡层和接触孔中的润湿层上形成第二导电层。

公开(公告)号：US5866800A

公开(公告)日：1999-02-02

申请号：US548387

申请日：1995-10-26

Applicant: Hyeon Soo Park ,  Hyun Woo Shin ,  Chul Han Kwon ,  Hyung Ki Hong ,  Dong Hyun Yun ,  Kyuchung Lee ,  Sung Tae Kim

Inventor： Hyeon Soo Park ,  Hyun Woo Shin ,  Chul Han Kwon ,  Hyung Ki Hong ,  Dong Hyun Yun ,  Kyuchung Lee ,  Sung Tae Kim

IPC: G01N27/00 ,  G01N27/12 ,  G01N27/26

CPC classification number: G01N27/12

Abstract: A gas sensor and a method for fabricating the same includes a semiconductor substrate, a supporting layer formed on the semiconductor substrate, the supporting layer being electrically insulative and having a pattern groove formed therein, a heater formed in the pattern groove, an electrically insulating layer formed on the heater and the supporting layer, an electrode formed on the insulating layer, and a sensing layer formed on the electrode and the insulating layer to detect a target gas of interest according to a measured change in electrical conductivity or resistance thereof.

Abstract translation: 气体传感器及其制造方法包括半导体基板，形成在半导体基板上的支撑层，支撑层是电绝缘的，其中形成有图形槽，形成在图案槽中的加热器，电绝缘层 形成在加热器和支撑层上的电极，形成在绝缘层上的电极，以及形成在电极和绝缘层上的感测层，以根据测量的导电性或电阻的变化来检测目标气体。

公开(公告)号：US5657802A

公开(公告)日：1997-08-19

申请号：US565853

申请日：1995-12-01

Applicant: Sung-Tae Kim

Inventor： Sung-Tae Kim

IPC: B65D47/08 ,  B65D77/24 ,  G01F19/00 ,  B65B1/04

CPC classification number: B65D77/245 ,  B65D47/0866 ,  G01F19/002 ,  B65D2251/1075

Abstract: An improved plug structure for aquarium fish food containers is disclosed. The plug of this invention has two depressions for receiving a detachable tap and a detachable spoon respectively. The tap is pivoted to the spoon and easily opened by a one touch motion. Both the spoon and the tap can be easily separated from the plug body at the same time. The above plug thus allows the fixed amount of food to be taken out of the food container thereby saving food. The plug also prevents food from dropping when measuring the fixed amount of food using the spoon.

Abstract translation: 公开了一种用于水族箱鱼食品容器的改进的塞子结构。 本发明的插头具有两个凹部，用于分别接收可拆卸的水龙头和可拆卸的勺子。 水龙头被枢转到勺子，并且通过一触式动作容易地打开。 勺子和水龙头可以同时容易地从插头体分离。 因此，上述插头允许将固定数量的食物从食物容器中取出，从而节省食物。 当使用勺子测量固定量的食物时，塞子还防止食物掉落。