公开(公告)号：US20170165198A9

公开(公告)日：2017-06-15

申请号：US13608617

申请日：2012-09-10

Applicant: Min Sang KIM ,  Hyun Ryoung KIM ,  Jae Chan PARK ,  Su Young CHAE ,  Sang Joon PARK

Inventor： Min Sang KIM ,  Hyun Ryoung KIM ,  Jae Chan PARK ,  Su Young CHAE ,  Sang Joon PARK

IPC: A61K9/127 ,  A61M37/00

CPC classification number: A61K9/127 ,  A61K9/1271 ,  A61K9/1272 ,  A61K31/704 ,  A61K47/42 ,  A61K47/6911 ,  A61M37/00 ,  B82Y5/00 ,  Y10S977/797 ,  Y10S977/907

Abstract: A liposome including an elastin-like polypeptide (ELP) and a tumor cell targeting material, a pharmaceutical composition including the liposome, and a method of delivering an active agent to a target site using the liposome.

公开(公告)号：US08835492B2

公开(公告)日：2014-09-16

申请号：US11815960

申请日：2006-03-31

Applicant: Doo Sung Lee ,  Min Sang Kim ,  Je Sun You ,  Huynh Dai Phu ,  Bong Sup Kim ,  Minh Khanh Nguyen

Inventor： Doo Sung Lee ,  Min Sang Kim ,  Je Sun You ,  Huynh Dai Phu ,  Bong Sup Kim ,  Minh Khanh Nguyen

IPC: A61K31/21 ,  C08G81/00 ,  C08L71/02 ,  C08G65/333 ,  C08L53/00 ,  C08G65/332 ,  C08G73/02 ,  C08G65/331 ,  C08L67/00

CPC classification number: C08G65/33306 ,  C08G65/331 ,  C08G65/3322 ,  C08G65/3324 ,  C08G73/028 ,  C08G81/00 ,  C08L53/00 ,  C08L67/00 ,  C08L71/02 ,  C08L2203/02 ,  C08L2205/05 ,  C08L2666/02 ,  C08L2666/18

Abstract: Disclosed is a block copolymer formed by coupling the following components with each other: (a) a copolymer (A) of a polyethylene glycol (PEG) type compound with a biodegradable polymer; and (b) at least one oligomer (B) selected from the group consisting of poly(β-amino ester) and poly(amido amine). A method for preparing the same block copolymer, and a polymeric hydrogel type drug composition comprising the temperature and pH-sensitive block copolymer and a physiologically active substance that can be encapsulated with the block copolymer are also disclosed. The multiblock copolymer is obtained by copolymerization of a pH-sensitive poly(β-amino ester) and/or poly(amido amine) type oligomer, a hydrophilic and temperature-sensitive polyethylene glycol type compound and a hydrophobic and biodegradable polymer. Therefore, the block copolymer can form a polymeric hydrogel structure due to its amphiphilicity resulting from the combination of a hydrophilic group and a hydrophobic group in the copolymer and ionization characteristics depending on pH variations, and thus can be used as a drug carrier for target-directed drug delivery depending on pH variations in the body.

Abstract translation: 公开了通过将以下组分彼此偶联而形成的嵌段共聚物：（a）聚乙二醇（PEG）型化合物与可生物降解聚合物的共聚物（A） 和（b）至少一种选自聚（亚氨基酯）和聚（酰氨基胺）的低聚物（B）。 还公开了制备相同嵌段共聚物的方法和包含温度和pH敏感性嵌段共聚物的聚合物水凝胶型药物组合物和可以用嵌段共聚物包封的生理活性物质。 多嵌段共聚物通过pH敏感的聚（酰胺基胺）和/或聚（酰氨基胺）型低聚物，亲水和温度敏感的聚乙二醇型化合物和疏水和可生物降解的聚合物共聚得到。 因此，嵌段共聚物由于其在共聚物中的亲水基团和疏水基团的组合引起的两亲性而形成聚合物水凝胶结构，并且根据pH变化而具有电离特性，因此可以用作靶向的药物载体， 定向药物递送取决于体内的pH变化。

公开(公告)号：US08684547B2

公开(公告)日：2014-04-01

申请号：US13109102

申请日：2011-05-17

Applicant: Min Sang Kim ,  Ji Won Jang

Inventor： Min Sang Kim ,  Ji Won Jang

IPC: F21V7/04 ,  H01J19/54

CPC classification number: G02B6/0055 ,  G02B6/0061 ,  G02B6/0073 ,  G02F1/133605 ,  G02F1/133615

Abstract: A backlight unit and a display apparatus using the same are disclosed. The backlight unit includes an optical sheet, a reflector having a reflective surface spaced apart from the optical sheet and having an inclined surface, a fixture connected to one side of the reflector, and a light source disposed to one side of the reflector.

Abstract translation: 公开了一种背光单元和使用其的显示装置。 背光单元包括光学片，具有与光学片间隔开的具有倾斜表面的反射表面的反射器，连接到反射器的一侧的灯具以及设置在反射器一侧的光源。

公开(公告)号：US08525147B2

公开(公告)日：2013-09-03

申请号：US13089477

申请日：2011-04-19

Applicant: Ji-myoung Lee ,  Min-sang Kim ,  Dong-won Kim

Inventor： Ji-myoung Lee ,  Min-sang Kim ,  Dong-won Kim

IPC: H01L29/06

CPC classification number: H01L27/105 ,  B82Y10/00 ,  H01L27/1021 ,  H01L27/115 ,  H01L27/1207 ,  H01L29/1606 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/78684 ,  H01L29/78696

Abstract: A semiconductor device that may control a formation of a channel is disclosed. The semiconductor device includes a gate region including a first area, an insulating layer disposed on portions of a top surface of the gate region corresponding to both ends portions of the first area, first and second electrodes formed on the insulating layer to be spaced apart from each other, an elastic conductive layer disposed between the first and second electrodes and the insulating layer and having a shape that varies according to an electrostatic force based on voltages applied to the first electrode, the second electrode, and the gate region, and a gate insulating region disposed between the elastic conductive layer and the first area of the gate region.

Abstract translation: 公开了可以控制通道形成的半导体器件。 所述半导体器件包括栅极区域，所述栅极区域包括第一区域，绝缘层设置在与所述第一区域的两端部分对应的所述栅极区域的顶表面的部分上，形成在所述绝缘层上的第一和第二电极， 相互之间，设置在第一和第二电极与绝缘层之间并且具有根据施加到第一电极，第二电极和栅极区域的电压根据静电力而变化的形状的弹性导电层，以及栅极 绝缘区域设置在弹性导电层和栅极区域的第一区域之间。

公开(公告)号：US08277089B2

公开(公告)日：2012-10-02

申请号：US13099173

申请日：2011-05-02

Applicant: Sung Yong Park ,  Kum Tae Lee ,  Min Sang Kim ,  Moon Jeong Kim

Inventor： Sung Yong Park ,  Kum Tae Lee ,  Min Sang Kim ,  Moon Jeong Kim

IPC: F21V7/00

CPC classification number: G02B6/0055 ,  G02B6/0046 ,  G02B6/008 ,  G02F1/133615 ,  G02F2001/133601 ,  G02F2001/133613

Abstract: A back light unit including a light emitting device assembly is disclosed. The light emitting device assembly includes a light emitting device module having a light emitting device, a light guide plate having a light incidence part disposed adjacent to the light emitting device module so that light generated from the light emitting device is incident upon the light incidence part and a light emission part from which the incident light is emitted, a reflective sheet provided at one side of the light guide plate, and a light adjustment part extending from the reflective sheet for adjusting a reflection amount of the light emitted from the light guide plate.

Abstract translation: 公开了一种包括发光器件组件的背光单元。 发光器件组件包括具有发光器件的发光器件模块，具有邻近发光器件模块设置的光入射部分的导光板，使得从发光器件产生的光入射到光入射部分 以及发射入射光的发光部，设置在导光板的一侧的反射片，以及从反射片延伸的调光部，用于调整从导光板射出的光的反射量 。

公开(公告)号：US08270211B2

公开(公告)日：2012-09-18

申请号：US13082605

申请日：2011-04-08

Applicant: Min-Sang Kim ,  Ji-Myoung Lee ,  Hyun-Jun Bae ,  Dong-Won Kim ,  Jun Seo ,  Weonwi Jang ,  Keun-Hwi Cho

Inventor： Min-Sang Kim ,  Ji-Myoung Lee ,  Hyun-Jun Bae ,  Dong-Won Kim ,  Jun Seo ,  Weonwi Jang ,  Keun-Hwi Cho

IPC: G11C11/50

CPC classification number: H01L28/40 ,  H01L27/10894

Abstract: A memory device includes a storage node, a first electrode, and a second electrode formed in a memory cell, the storage node stores electrical charges, the first electrode comprising a first portion electrically connected to a second portion, the first portion moves to connect to the storage node when the second electrode is energized.

Abstract translation: 存储装置包括存储节点，第一电极和形成在存储单元中的第二电极，所述存储节点存储电荷，所述第一电极包括电连接到第二部分的第一部分，所述第一部分移动以连接到 当第二电极通电时的存储节点。

公开(公告)号：US08212766B2

公开(公告)日：2012-07-03

申请号：US13087421

申请日：2011-04-15

Applicant: Kum Tae Lee ,  Min Sang Kim ,  Moon Jeong Kim ,  Sung Yong Park

Inventor： Kum Tae Lee ,  Min Sang Kim ,  Moon Jeong Kim ,  Sung Yong Park

IPC: G09G3/36

CPC classification number: G09G3/3406 ,  G02B6/0031 ,  G02B6/0055 ,  G02B6/008 ,  G02B6/0083 ,  G02B6/0088 ,  G02B6/0091 ,  G02F2001/133601 ,  G09G2310/0232 ,  G09G2320/0233 ,  G09G2320/0626

Abstract: The embodiments provide a backlight unit including a bottom cover, a plurality of light emitting device assembly each having a light emitting device module including at least one light emitting device, the light emitting device assembly arranged on the bottom cover adjacent to one another, a power supply unit for supplying power to the light emitting device module in each of the light emitting device assembly, and a control unit for controlling the power supply unit such that, of the light emitting device modules of the light emitting device assembly, intensity of current supplied to a light emission device positioned at an edge region of each of the light emitting device assembly is different from the intensity of current supplied to the light emission device positioned at a middle region of each of the light emitting device assembly.

Abstract translation: 实施例提供了一种背光单元，其包括底盖，多个发光器件组件，每个发光器件组件均具有包括至少一个发光器件的发光器件模块，布置在彼此相邻的底盖上的发光器件组件， 供电单元，用于向每个发光器件组件中的发光器件模块供电;以及控制单元，用于控制电源单元，使得在发光器件组件的发光器件模块中，提供的电流强度 到位于每个发光器件组件的边缘区域处的发光器件不同于提供给位于每个发光器件组件的中间区域的发光器件的电流的强度。

公开(公告)号：US08168492B2

公开(公告)日：2012-05-01

申请号：US12754128

申请日：2010-04-05

Applicant: Sung-Min Kim ,  Dong-Gun Park ,  Dong-Won Kim ,  Min-Sang Kim ,  Eun-jung Yun

Inventor： Sung-Min Kim ,  Dong-Gun Park ,  Dong-Won Kim ,  Min-Sang Kim ,  Eun-jung Yun

IPC: H01L21/8238

CPC classification number: H01L27/10876 ,  H01L21/823437 ,  H01L21/823487 ,  H01L21/84 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/10894 ,  H01L27/1203 ,  H01L29/66621

Abstract: In semiconductor devices, and methods of formation thereof, both planar-type memory devices and vertically oriented thin body devices are formed on a common semiconductor layer. In a memory device, for example, it is desirable to have planar-type transistors in a peripheral region of the device, and vertically oriented thin body transistor devices in a cell region of the device. In this manner, the advantageous characteristics of each type of device can be applied to appropriate functions of the memory device.

Abstract translation: 在半导体器件及其形成方法中，平面型存储器件和垂直取向的薄体器件都形成在公共半导体层上。 在存储器件中，例如，希望在器件的外围区域中具有平面型晶体管，并且在器件的单元区域中具有垂直取向的薄体晶体管器件。 以这种方式，每种类型的装置的有利特征可以应用于存储装置的适当功能。

公开(公告)号：US08129777B2

公开(公告)日：2012-03-06

申请号：US12659008

申请日：2010-02-23

Applicant: Min-Sang Kim ,  Sung-Young Lee ,  Sung-Min Kim ,  Eun-Jung Yun ,  In-Hyuk Choi

Inventor： Min-Sang Kim ,  Sung-Young Lee ,  Sung-Min Kim ,  Eun-Jung Yun ,  In-Hyuk Choi

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC classification number: H01L29/78696 ,  H01L29/42392 ,  H01L29/66787

Abstract: In a method of manufacturing a semiconductor device, an active channel pattern is formed on a substrate. The active channel pattern includes preliminary gate patterns and single crystalline silicon patterns that are alternately stacked with each other. A source/drain layer is formed on a sidewall of the active channel pattern. Mask pattern structures including a gate trench are formed on the active channel pattern and the source/drain layer. The patterns are selectively etched to form tunnels. The gate trench is then filled with a gate electrode. The gate electrode surrounds the active channel pattern. The gate electrode is protruded from the active channel pattern. The mask pattern structures are then removed. Impurities are implanted into the source/drain regions to form source/drain regions. A silicidation process is carried out on the source/drain regions to form a metal silicide layer, thereby completing a semiconductor device having a MOS transistor.

Abstract translation: 在制造半导体器件的方法中，在衬底上形成有源沟道图案。 有源沟道图案包括彼此交替堆叠的初步栅极图案和单晶硅图案。 源极/漏极层形成在有源沟道图案的侧壁上。 在有源沟道图案和源极/漏极层上形成包括栅极沟槽的掩模图案结构。 选择性地蚀刻图案以形成隧道。 然后用栅电极填充栅极沟槽。 栅电极围绕有源沟道图案。 栅电极从有源沟道图案突出。 然后去除掩模图案结构。 将杂质注入源/漏区以形成源/漏区。 在源极/漏极区域上进行硅化处理以形成金属硅化物层，从而完成具有MOS晶体管的半导体器件。

公开(公告)号：US20110230001A1

公开(公告)日：2011-09-22

申请号：US13116374

申请日：2011-05-26

Applicant: Eun-Jung Yun ,  Min-Sang Kim ,  Sung-Min Kim ,  Sung-Young Lee ,  Ji-Myoung Lee ,  In-Hyuk Choi

Inventor： Eun-Jung Yun ,  Min-Sang Kim ,  Sung-Min Kim ,  Sung-Young Lee ,  Ji-Myoung Lee ,  In-Hyuk Choi

IPC: H01L21/00

CPC classification number: H01L27/10 ,  G11C11/50 ,  H01L27/115

Abstract: A multibit electro-mechanical memory device comprises a substrate, a bit line on the substrate, a first interlayer insulating film on the bit line, first and second lower word lines on the first interlayer insulating film, the first and second lower word lines separated horizontally from each other by a trench, a spacer abutting a sidewall of each of the first and second lower word lines, a pad electrode inside a contact hole, first and second cantilever electrodes suspended over first and second lower voids that correspond to upper parts of the first and second lower word lines provided in both sides on the pad electrode, the first and second cantilever electrodes being separated from each other by the trench, and being curved in a third direction that is perpendicular to the first and second direction; a second interlayer insulating film on the pad electrode, first and second trap sites supported by the second interlayer insulating film to have first and second upper voids on the first and second cantilever electrodes, and first and second upper word lines on the first and second trap sites.

Abstract translation: 多位机电存储器件包括衬底，衬底上的位线，位线上的第一层间绝缘膜，第一层间绝缘膜上的第一和第二下字线，第一和第二下字线水平分开 通过沟槽彼此相邻的间隔件，邻接第一和第二下部字线中的每一个的侧壁的间隔件，接触孔内的焊盘电极，悬挂在第一和第二下部空隙中的第一和第二悬臂电极，其对应于 第一和第二下部字线设置在焊盘电极的两侧，第一和第二悬臂电极通过沟槽彼此分离，并且在垂直于第一和第二方向的第三方向上弯曲; 在所述焊盘电极上的第二层间绝缘膜，由所述第二层间绝缘膜支撑的第一和第二陷阱位置，以在所述第一和第二悬臂电极上具有第一和第二上部空隙，以及在所述第一和第二阱上的第一和第二上部字线 网站。