公开(公告)号：US20110284863A1

公开(公告)日：2011-11-24

申请号：US13069900

申请日：2011-03-23

Applicant: Ed Lindow ,  Chantal Arena ,  Ronald Bertram ,  Ranjan Datta ,  Subhash Mahajan

Inventor： Ed Lindow ,  Chantal Arena ,  Ronald Bertram ,  Ranjan Datta ,  Subhash Mahajan

IPC: H01L29/20 ,  H01L21/20

CPC classification number: H01L29/2003 ,  H01L21/0237 ,  H01L21/02455 ,  H01L21/02458 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02617 ,  H01L21/0262

Abstract: Embodiments of the invention relate to methods of fabricating semiconductor structures, and to semiconductor structures fabricated by such methods. In some embodiments, the methods may be used to fabricate semiconductor structures of III-V materials, such as InGaN. A semiconductor layer is fabricated by growing sublayers using differing sets of growth conditions to improve the homogeneity of the resulting layer, to improve a surface roughness of the resulting layer, and/or to enable the layer to be grown to an increased thickness without the onset of strain relaxation.

Abstract translation: 本发明的实施例涉及制造半导体结构的方法以及通过这些方法制造的半导体结构。 在一些实施例中，该方法可用于制造诸如InGaN的III-V材料的半导体结构。 通过使用不同的生长条件生长子层来制造半导体层，以改善所得层的均匀性，改善所得层的表面粗糙度和/或使层能够生长到增加的厚度而不发生 的应变松弛。

公开(公告)号：US20110263883A1

公开(公告)日：2011-10-27

申请号：US13116602

申请日：2011-05-26

Applicant: Aniket KALE ,  Qiang HU ,  Milton SOMMERFELD

Inventor： Aniket KALE ,  Qiang HU ,  Milton SOMMERFELD

IPC: C11B3/16

CPC classification number: C11B1/10 ,  C11B3/008

Abstract: Systems and methods for extracting lipids of varying polarities from oleaginous material.

Abstract translation: 从含油材料中提取不同极性的脂质的系统和方法。

公开(公告)号：US20110261634A1

公开(公告)日：2011-10-27

申请号：US13083405

申请日：2011-04-08

Applicant: Sameer M. Venugopal ,  David R. Allee ,  Lawrence T. Clark ,  Nazanin Darbanian

Inventor： Sameer M. Venugopal ,  David R. Allee ,  Lawrence T. Clark ,  Nazanin Darbanian

IPC: G11C7/00 ,  H05K13/00

CPC classification number: G11C11/413 ,  Y10T29/49117

Abstract: Embodiments and examples of differential threshold voltage non-volatile memories and related methods are described herein. Other embodiments, examples thereof, and related methods are also disclosed herein.

Abstract translation: 本文描述了差分阈值电压非易失性存储器及相关方法的实施例和示例。 本文还公开了其它实施例，其示例和相关方法。

公开(公告)号：US20110143224A1

公开(公告)日：2011-06-16

申请号：US12999903

申请日：2009-06-23

Applicant: Bruce E. Rittmann ,  Cesar I. Torres ,  Hyung-Sool Lee

Inventor： Bruce E. Rittmann ,  Cesar I. Torres ,  Hyung-Sool Lee

IPC: H01M8/16 ,  H01M8/04

CPC classification number: H01M8/16 ,  C25B1/02 ,  Y02E60/527

Abstract: The present invention relates generally to a process that helps alleviate the pH gradient between anode and cathode compartments in any biological fuel cell or electrolytic cell configuration in which a pH gradient between anode and cathode is limiting the voltage efficiency. By providing acid to the cathode compartment in the form of CO2, the pH gradient is reduced and voltage efficiency and power output are increased. In one embodiment, carbon dioxide produced in the anode chamber is recycled to the cathode chamber.

Abstract translation: 本发明一般涉及一种有助于缓解任何生物燃料电池或电解池结构中阳极室和阴极室之间的pH梯度的方法，其中阳极和阴极之间的pH梯度限制了电压效率。 通过以CO 2的形式向阴极室提供酸，pH梯度降低，电压效率和功率输出增加。 在一个实施例中，在阳极室中产生的二氧化碳被再循环到阴极室。

公开(公告)号：US07889149B2

公开(公告)日：2011-02-15

申请号：US12004681

申请日：2007-12-21

Applicant: Rodolfo Diaz ,  Jeffrey Peebles ,  Yan Guo

Inventor： Rodolfo Diaz ,  Jeffrey Peebles ,  Yan Guo

IPC: H01Q13/00

CPC classification number: H01Q13/24 ,  B33Y80/00 ,  Y10T29/49016

Abstract: A dielectric polyrod having at least one tapered section, where a section exposed outside of the waveguide is tapered a long a curve that depends on the dielectric constant of the material used. The invention also relates to an aperture matched polyrod antenna which includes the same and an inductive tuning element used to achieve wideband impedance match and to create a Gaussian beam in the radiating near field of the antenna, suitable to mimic a small region plane wave.

Abstract translation: 具有至少一个锥形部分的介电聚合物，其中暴露在波导外部的部分根据所使用的材料的介电常数形成长的曲线。 本发明还涉及一种孔径匹配的多极天线，其包括它们和用于实现宽带阻抗匹配并且在天线的辐射近场中产生适合于模拟小区域平面波的高斯波束的感应调谐元件。

公开(公告)号：US07889148B2

公开(公告)日：2011-02-15

申请号：US12004310

申请日：2007-12-19

Applicant: Rodolfo Diaz ,  Jeffrey Peebles ,  Richard LeBaron ,  Zhichao Zhang ,  Lorena Lozano-Plata

Inventor： Rodolfo Diaz ,  Jeffrey Peebles ,  Richard LeBaron ,  Zhichao Zhang ,  Lorena Lozano-Plata

IPC: H01Q13/00

CPC classification number: H01Q13/0275 ,  H01Q13/24

Abstract: A plane wave antenna including: a horn antenna; a waveguide at least partially inside the horn antenna, wherein the waveguide includes: a central dielectric slab increasing in width toward the horn antenna and with a first dielectric constant, an upper slab above the central dielectric slab with a second dielectric constant, and a lower slab below the central dielectric slab with the second dielectric constant; wherein the central dielectric slab has a substantially constant thickness less than a quarter of a wavelength at a highest frequency of operation of the plane wave antenna.

Abstract translation: 平面波天线包括：喇叭天线; 至少部分地在喇叭天线内部的波导，其中所述波导包括：朝向所述喇叭天线宽度增加并具有第一介电常数的中心电介质平板，具有第二介电常数的所述中心电介质板上方的上部平板，以及下部 在具有第二介电常数的中心电介质板下方的板坯; 其中中心电介质板在平面波天线的最高工作频率下具有小于波长四分之一的基本恒定的厚度。

公开(公告)号：US20110033501A1

公开(公告)日：2011-02-10

申请号：US12681721

申请日：2008-10-06

Applicant: Roy Curtiss iii ,  Melha Mellata ,  Bereket Zekarias ,  Zhaoxing Shi ,  Christine Branger ,  Kenneth Roland

Inventor： Roy Curtiss iii ,  Melha Mellata ,  Bereket Zekarias ,  Zhaoxing Shi ,  Christine Branger ,  Kenneth Roland

IPC: A61K39/112 ,  C12N1/21 ,  A61P37/04

CPC classification number: A61K39/0275 ,  A61K39/025 ,  A61K2039/522 ,  A61K2039/523 ,  C12N15/74 ,  Y02A50/47 ,  Y02A50/482 ,  Y02A50/484

Abstract: The present invention relates to a recombinant bacterium that is capable of eliciting an immune response against at least two enteric pathogens, without substantially inducing an immune response specific to the serotype of the bacterium. The invention also relates to methods of making such a bacterium and vaccines and methods of using such a bacterium.

Abstract translation: 本发明涉及能够引起针对至少两种肠道病原体的免疫应答而不基本上诱导对该细菌的血清型特异的免疫应答的重组细菌。 本发明还涉及制备这种细菌和疫苗的方法以及使用这种细菌的方法。

公开(公告)号：US20110014683A1

公开(公告)日：2011-01-20

申请号：US12446405

申请日：2007-10-19

Applicant: Willem F. J. Vermaas ,  Bruce E. Rittmann

Inventor： Willem F. J. Vermaas ,  Bruce E. Rittmann

IPC: C12N1/20 ,  C12M1/04

CPC classification number: C12M41/18 ,  C12M21/02 ,  C12M23/06 ,  C12M29/04 ,  C12M33/14

Abstract: Disclosed are a system and method for growing photosynthetic cells in conduit. The system and method supply light, CO2 and nutrients to the cells. The system and method also dampen thermal variations in the conduit.

Abstract translation: 公开了用于在管道中生长光合细胞的系统和方法。 系统和方法向细胞提供光，CO2和营养物质。 该系统和方法还抑制导管中的热变化。

公开(公告)号：US07867658B2

公开(公告)日：2011-01-11

申请号：US10555468

申请日：2004-05-03

Applicant: C. Austen Angell ,  Wu Xu ,  Jean-Philippe Belieres ,  Masahiro Yoshizawa

Inventor： C. Austen Angell ,  Wu Xu ,  Jean-Philippe Belieres ,  Masahiro Yoshizawa

IPC: H01M8/00 ,  H01M8/08

CPC classification number: H01M8/144 ,  H01M8/1016 ,  H01M8/14 ,  H01M2300/0005 ,  H01M2300/0022 ,  H01M2300/0048 ,  H01M2300/0054 ,  H01M2300/0062 ,  H01M2300/0085 ,  H01M2300/0091 ,  Y02P70/56

Abstract: Disclosed are developments in high temperature fuel cells including ionic liquids with high temperature stability and the storage of inorganic acids as di-anion salts of low volatility. The formation of ionically conducting liquids of this type having conductivities of unprecedented magnitude for non-aqueous systems is described. The stability of the di-anion configuration is shown to play a role in the high performance of the non-corrosive proton-transfer ionic liquids as high temperature fuel cell electrolytes. Performance of simple H2(g) electrolyte/O2(g) fuel cells with the new electrolytes is described. Superior performance both at ambient temperature and temperatures up to and above 200° C. are achieved. Both neutral proton transfer salts and the acid salts with HSO−4 anions, give good results, the bisulphate case being particularly good at low temperatures and very high temperatures. The performance of all electrolytes is improved by the addition of a small amount of involatile base of pKa value intermediate between those of the acid and base that make the bulk electrolyte. The preferred case is the imidazole-doped ethylammonium hydrogensulfate which yields behavior superior in all respects to that of the industry standard phosphoric acid electrolyte.

Abstract translation: 公开了高温燃料电池的发展，包括具有高温稳定性的离子液体和无机酸作为低挥发性的二阴离子盐的储存。 描述了具有前所未有的非水系统电导率的这种离子导电液体的形成。 二阴离子配置的稳定性显示出在非腐蚀性质子转移离子液体作为高温燃料电池电解质的高性能中起作用。 描述了具有新电解质的简单H 2（g）电解质/ O 2（g）燃料电池的性能。 在环境温度和高于和高于200℃的温度下都能实现卓越的性能。 两种中性质子转移盐和与HSO-4阴离子的酸式盐都具有良好的结果，硫酸氢盐的情况在低温和非常高的温度下特别好。 所有电解质的性能通过在制造本体电解质的酸和碱之间添加少量pKa值的非挥发性碱而提高。 优选的情况是咪唑掺杂的硫酸氢铵，其产生的行为在所有方面都优于工业标准磷酸电解质。

公开(公告)号：US20100320508A1

公开(公告)日：2010-12-23

申请号：US12677066

申请日：2008-09-12

Applicant: Joseph E. Ervin ,  Trevor John Thornton

Inventor： Joseph E. Ervin ,  Trevor John Thornton

IPC: H01L29/812 ,  H01L21/338

CPC classification number: H01L29/8124 ,  H01L29/1037 ,  H01L29/42316 ,  H01L29/4238 ,  H01L29/47 ,  H01L29/66848 ,  H01L29/7832 ,  H01L29/7855 ,  H01L29/8126 ,  H01L2029/7857

Abstract: The present invention provides a horizontally depleted Metal Semiconductor Field Effect Transistor (MESPET). A drain region, a source region, and a channel region are formed in the device layer such that the drain region and the source region are spaced apart from one another and the channel region extends between the drain region and the source region. First and second gate contacts are formed in the device layer on either side of the channel region, and as such, the first and second gate contacts will also reside between opposing portions of the source and drain regions. With this configuration, voltages applied to the first and second gate contacts effectively control vertical depletion regions, which form on either side of the channel region.

Abstract translation: 本发明提供了一种水平耗尽的金属半导体场效应晶体管（MESPET）。 漏极区域，源区域和沟道区域形成在器件层中，使得漏极区域和源极区域彼此间隔开，并且沟道区域在漏极区域和源极区域之间延伸。 第一和第二栅极触点形成在沟道区两侧的器件层中，因此第一和第二栅极触点也将位于源区和漏区的相对部分之间。 利用该配置，施加到第一和第二栅极触点的电压有效地控制在沟道区的任一侧上形成的垂直耗尽区。