公开(公告)号：US08981346B1

公开(公告)日：2015-03-17

申请号：US14501833

申请日：2014-09-30

申请人： The United States of America as represented by the Secretary of the Navy

发明人： Nackieb Kamin ,  Marcio De Andrade ,  David Garmire ,  Richard Ordonez ,  Cody Hayashi

IPC分类号： H01L29/06 ,  H01L31/115 ,  H01L31/0336 ,  H01L27/144

CPC分类号： H01L27/1443 ,  H01G11/36 ,  H01L31/028 ,  H01L31/085 ,  Y02E10/547

摘要： A system includes a semiconductor substrate having at least two electrodes disposed thereon, a dielectric layer disposed over the electrodes, a graphene layer disposed over the dielectric layer and electrically isolated from the electrodes, and a differential amplifier operatively connected to the electrodes and electrically isolated from the graphene layer. A radiation-sensitive layer may be disposed over the graphene layer and a voltage source may be operatively connected to two of the electrodes. The system may be contained on an integrated circuit and may be used to sense radiation in liquid and gas form.

摘要翻译： 一种系统包括具有设置在其上的至少两个电极的半导体衬底，设置在电极上的电介质层，设置在电介质层上并与电极电绝缘的石墨烯层，以及可操作地连接到电极并与电极电隔离的差分放大器 石墨烯层。 辐射敏感层可以设置在石墨烯层之上，并且电压源可以可操作地连接到两个电极。 该系统可以包含在集成电路上，并且可以用于感测液体和气体形式的辐射。

公开(公告)号：US08921856B2

公开(公告)日：2014-12-30

申请号：US13875446

申请日：2013-05-02

申请人： National Chiao Tung University

发明人： Pao-Yun Tang ,  Shu-Lin Ho ,  Kei-Hsiung Yang

IPC分类号： H01L29/04 ,  H01L31/115 ,  H01L31/0376

CPC分类号： H01L31/1055 ,  H01L27/1214

摘要： A TFT-PIN array substrate and an assembly structure for a flat-panel x-ray detector are provided to overcome the problem that the conventional scintillator substrate and TFT-PIN array substrate are neither penetrated by UV-light nor assembled by UV curable LOCA. The metal layer of the PIN photodiode of the TFT-PIN array substrate is perforated to have at least one hole, whereby UV-light can pass through the TFT-PIN array substrate to cure UV curable LOCA. Therefore, UV curable LOCA can be used as an adhesive layer in the assembly structure of a scintillator substrate and a TFT-PIN array substrate to promote the detective quantum efficiency and image quality of a flat-panel X-Ray detector.

摘要翻译： 提供TFT-PIN阵列基板和用于平板X射线检测器的组装结构，以克服常规闪烁体基板和TFT-PIN阵列基板既不被紫外光穿透也不经紫外线固化LOCA组装的问题。 TFT-PIN阵列基板的PIN光电二极管的金属层被穿孔以具有至少一个孔，由此UV光可以穿过TFT-PIN阵列基板以固化UV可固化LOCA。 因此，UV固化LOCA可以用作闪烁体基板和TFT-PIN阵列基板的组装结构中的粘合剂层，以提高平板X射线检测器的检测量子效率和图像质量。

公开(公告)号：US08920686B2

公开(公告)日：2014-12-30

申请号：US13016016

申请日：2011-01-28

申请人： Peter Hackenschmied ,  Christian Schröter ,  Matthias Strassburg

发明人： Peter Hackenschmied ,  Christian Schröter ,  Matthias Strassburg

IPC分类号： H01B1/06 ,  H01L31/0296 ,  H01L31/0272 ,  H01L31/0264 ,  H01L31/115 ,  G01T1/24

CPC分类号： G01T1/24 ,  H01L31/115

摘要： A radiation converter material includes a semiconductor material used for directly converting radiation quanta into electrical charge carriers. In at least one embodiment, the semiconductor material includes a dopant in a dopant concentration and defect sites produced in a process-dictated manner in such a way that the semiconductor material includes an ohmic resistivity in a range of between 5·107 Ω·cm and 2·109 Ω·cm. Such a radiation converter material is particularly well matched to the requirements in particular in human-medical applications with regard to the high flux rate present and the spectral distribution of the radiation quanta. In at least one embodiment, the invention additionally relates to a radiation converter and a radiation detector, and a use of and a method for producing such a radiation converter material.

摘要翻译： 辐射转换器材料包括用于将辐射量子直接转换成电荷载流子的半导体材料。 在至少一个实施例中，半导体材料包括掺杂剂浓度的掺杂剂和以工艺规定的方式产生的缺陷位置，使得半导体材料包括在介于5×10 7Ω·cm之间的欧姆电阻率 和2·109＆OHgr··cm。 关于高通量率和辐射量子谱的光谱分布，这种辐射转换器材料特别好地符合人类医疗应用中的要求。 在至少一个实施例中，本发明还涉及辐射转换器和辐射探测器，以及用于生产这种辐射转换器材料的用途和方法。

公开(公告)号：US08872224B2

公开(公告)日：2014-10-28

申请号：US13831442

申请日：2013-03-14

申请人： Palo Alto Research Center Incorporated

发明人： Gregory L. Whiting ,  Tse Nga Ng ,  Janos Veres ,  Robert A. Street

IPC分类号： H01L29/66 ,  H01L31/115 ,  H01L31/18 ,  H01L31/0336

CPC分类号： H01L31/035218 ,  H01L31/109 ,  H01L31/115 ,  H01L31/118

摘要： A low-cost neutron detector is formed on a substrate includes a sensor formed by an active material layer sandwiched between two electrodes, and a neutron capture layer formed in close proximity to (i.e., over and/or under) the sensor. The sensor active material layer includes a bulk heterojunction or bilayer structure that is formed by depositing particulate solutions incorporating at least one type of high atomic number nanoparticle using low-temperature (i.e., below 400° C.) solution processing techniques. The sensor electrode material and neutron capture material are similarly disposed in associated solutions (e.g., conductive inks) that are also deposited using low-temperature solution processing techniques, whereby the fabrication process can be carried out on low-cost flexible substrate material (e.g., PET) using high efficiency roll-to-roll production techniques. The neutron capture material is optionally patterned as an array of pillars, and the active layer materials are backfilled between the pillars.

摘要翻译： 在基板上形成低成本的中子检测器，其包括由夹在两个电极之间的活性材料层形成的传感器和在传感器附近（即，上方和/或下方）形成的中子俘获层。 传感器活性材料层包括通过使用低温（即低于400℃）溶液处理技术沉积掺入至少一种类型的高原子序数纳米颗粒的微粒溶液而形成的本体异质结或双层结构。 传感器电极材料和中子捕获材料类似地设置在也使用低温溶液处理技术沉积的相关联的溶液（例如，导电油墨）中，由此可以在低成本的柔性基底材料（例如， PET）使用高效率的卷对卷生产技术。 中子捕获材料任选地被图案化成一列柱状，并且活性层材料在柱之间回填。

公开(公告)号：US20140209809A1

公开(公告)日：2014-07-31

申请号：US14164702

申请日：2014-01-27

申请人： Lan Zhang ,  Yulan Li ,  Yuangjing Li ,  Yinong Liu ,  Jianqiang Fu ,  Hao Jiang ,  Wei Zhang ,  Yanqing Liu ,  Jun Liu

发明人： Lan Zhang ,  Yulan Li ,  Yuangjing Li ,  Yinong Liu ,  Jianqiang Fu ,  Hao Jiang ,  Wei Zhang ,  Yanqing Liu ,  Jun Liu

IPC分类号： H01L31/115

CPC分类号： H01L31/115 ,  G01T1/241

摘要： The present disclosure provides a radiation detector, comprising: a semiconductor crystal for detecting radiation, the semiconductor crystal comprising a top surface, a bottom surface, and at least one side surface; at least one anode arranged on at least one of the top surface, the bottom surface, and the at least one side surface; and at least one cathode arranged on at least another one of the top surface, the bottom surface, and the at least one side surface, wherein the at least one anode each has a stripe shape, the at least one cathode each has a planar or curved shape, and the at least one cathode and the at least one anode extend in parallel with respect to each other to a length substantially equal to that of the anode. Such an electrode structure can improve energy resolution and detection efficiency of the radiation detector effectively.

摘要翻译： 本公开提供了一种辐射检测器，包括：用于检测辐射的半导体晶体，所述半导体晶体包括顶表面，底表面和至少一个侧表面; 布置在所述顶表面，所述底表面和所述至少一个侧表面中的至少一个上的至少一个阳极; 以及至少一个阴极，其布置在所述顶表面，所述底表面和所述至少一个侧表面中的至少另一个上，其中所述至少一个阳极各自具有条形形状，所述至少一个阴极各自具有平面或 并且所述至少一个阴极和所述至少一个阳极相对于彼此平行延伸至基本上等于所述阳极的长度的长度。 这样的电极结构可以有效地提高辐射探测器的能量分辨率和检测效率。

公开(公告)号：US20120161265A1

公开(公告)日：2012-06-28

申请号：US13144053

申请日：2010-07-09

申请人： Akihito Hora ,  Takeshi Ishikura ,  Satoshi Takano ,  Daisuke Inui

发明人： Akihito Hora ,  Takeshi Ishikura ,  Satoshi Takano ,  Daisuke Inui

IPC分类号： H01L31/115

CPC分类号： G01T1/167

摘要： Provided is a surface contamination monitor that comprises a hand and foot contamination monitor that can be relocated to an inspection site in a simple manner. A surface contamination monitor has a folding mechanism that allows folding a monitor main body, and comprises a base (1) whose top face is provided with radiation detection elements (10) for measurement of a foot portion, a support column (2) provided at a center of a far side of the top face of the base (1), and an upper unit (3), which is fixed to a top end portion of the support column (2), and on which there are provided radiation detection elements (10) for measurement of a hand portion. The folding mechanism allows the support column (2) to bend towards the top face of the base (1) by way of a first hinge provided at a lower end portion of the support column (2), and to bend towards an opposite side by way of a second hinge provided at an intermediate section of the support column (2), such that the upper unit (3) juts out beyond an end of the base (1) in a state where the support column (2) is bent by way of the first and second hinges.

摘要翻译： 提供了一种表面污染监测器，其包括可以以简单的方式重新定位到检查现场的手足污染监测器。 表面污染监测器具有允许折叠监视器主体的折叠机构，并且包括其顶面设置有用于测量脚部的辐射检测元件（10）的基座（1），设置在底部 位于基座（1）的顶面的远侧的中心，以及固定在支撑柱（2）的顶端部分上的上部单元（3），在其上设有放射线检测元件 （10），用于测量手部分。 折叠机构允许支撑柱（2）通过设置在支撑柱（2）的下端部处的第一铰链朝向基部（1）的顶面弯曲，并且朝向相反侧弯曲 设置在支撑柱（2）的中间部分处的第二铰链的方式，使得在支撑柱（2）被弯曲的状态下，上部单元（3）突出超过基部（1）的端部， 第一和第二铰链的方式。

公开(公告)号：US20120097223A1

公开(公告)日：2012-04-26

申请号：US13295055

申请日：2011-11-12

申请人： Yevgeni Preezant

发明人： Yevgeni Preezant

IPC分类号： H01L31/06 ,  H01L31/115

CPC分类号： H01L51/4253 ,  Y02E10/549 ,  Y02P70/521

摘要： The invention is a photovoltaic device configured as a sandwiched structure comprising a bulk region between a pair of collecting electrodes. The bulk region comprises an electric-field inducing component and a photoactive component. The photoactive component is in electric contact with the collecting electrodes to provide a continuous conduction path for photo-generated charge carriers between the electrodes. The electric-field inducing component is adapted to provide a permanent electric field having high electric strength in the entire inter-electrode region, thereby inducing an electric field in the photoactive component. The electric-field inducing component does not participate in transport of the photo-generated charge carriers. The field inducing component can be comprised of a material that retains sustained polarization or a material that comprises and sustains a spatial distribution of electrical charges, or it can be comprised of both types of materials.

摘要翻译： 本发明是一种被构造为夹层结构的光伏器件，其包括一对集电电极之间的体区。 体区包括电场诱导组件和光活性组分。 光敏组分与集电极电接触，为电极之间的光电载流子提供连续的传导路径。 电场感应部件适于在整个电极间区域提供具有高电强度的永久电场，从而在光敏部件中产生电场。 电场诱导组件不参与光电荷载体的运输。 场诱导组件可以由保持持续极化的材料或包含并维持电荷的空间分布的材料组成，或者它可以由两种类型的材料组成。

公开(公告)号：US20110316105A1

公开(公告)日：2011-12-29

申请号：US12949313

申请日：2010-11-18

申请人： Thomas J. Sanders ,  Nicolaas W. Van Vonno ,  Clyde Combs ,  Glenn T. Hess

发明人： Thomas J. Sanders ,  Nicolaas W. Van Vonno ,  Clyde Combs ,  Glenn T. Hess

IPC分类号： H01L31/115

CPC分类号： H01L31/115 ,  H01L21/7624 ,  H01L31/105 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A PIN diode-based monolithic Nuclear Event Detector and method of manufacturing same for use in detecting a desired level of gamma radiation, in which a PIN diode is integrated with signal processing circuitry, for example CMOS circuitry, in a single thin-film Silicon On Insulator (SOI) chip. The PIN diode is implemented in either a p-, intrinsic, or n-substrate layer. The signal processing circuitry is located in a thin semiconductor layer and is in electrical communication with the PIN diode. The PIN diode may be integrated with the signal processing circuitry onto a single chip, or may be fabricated stand alone using SOI methods according to the method of the invention.

摘要翻译： 基于PIN二极管的单片核事件检测器及其制造方法，用于检测所需的伽马辐射水平，其中PIN二极管与信号处理电路（例如CMOS电路）集成在单个薄膜硅上 绝缘体（SOI）芯片。 PIN二极管实现在p，本征或n衬底层中。 信号处理电路位于薄的半导体层中并与PIN二极管电连通。 PIN二极管可以与信号处理电路集成到单个芯片上，或者可以使用根据本发明的方法的SOI方法单独制造。

公开(公告)号：US20110272589A1

公开(公告)日：2011-11-10

申请号：US13099001

申请日：2011-05-02

申请人： Ge Yang ,  Aleksey E. Bolotnikov ,  Giuseppe Camarda ,  Yonggang Cui ,  Anwar Hossain ,  Ki Hyun Kim ,  Ralph B. James

发明人： Ge Yang ,  Aleksey E. Bolotnikov ,  Giuseppe Camarda ,  Yonggang Cui ,  Anwar Hossain ,  Ki Hyun Kim ,  Ralph B. James

IPC分类号： G01T1/24 ,  H01L31/115

CPC分类号： G01T1/241 ,  H01L31/085

摘要： The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

摘要翻译： 本发明涉及一种用于放射线检测器的新型混合阳极配置，其通过聚焦检测器的内部电场并将偏移载流子从侧表面重新定向，从而有效地减少化合物半导体检测器中的内部电场上的表面缺陷的边缘效应 的半导体朝向收集电极。

公开(公告)号：US20110079791A1

公开(公告)日：2011-04-07

申请号：US12637463

申请日：2009-12-14

申请人： MVS Chandrashekhar ,  Christopher Ian Thomas ,  Michael G. Spencer

发明人： MVS Chandrashekhar ,  Christopher Ian Thomas ,  Michael G. Spencer

IPC分类号： H01L31/115 ,  H01L31/0312

CPC分类号： G21H1/02

摘要： High aspect ratio micromachined structures in semiconductors are used to improve power density in Betavoltaic cells by providing large surface areas in a small volume. A radioactive beta-emitting material may be placed within gaps between the structures to provide fuel for a cell. The pillars may be formed of SiC. In one embodiment, SiC pillars are formed of n-type SiC. P type dopant, such as boron is obtained by annealing a borosilicate glass boron source formed on the SiC. The glass is then removed. In further embodiments, a dopant may be implanted, coated by glass, and then annealed. The doping results in shallow planar junctions in SiC.

摘要翻译： 半导体中的高纵横比微加工结构用于通过在小体积中提供大的表面积来改善Betavoltaic细胞中的功率密度。 放射性β发射材料可以放置在结构之间的间隙内以为电池提供燃料。 支柱可以由SiC形成。 在一个实施例中，SiC柱由n型SiC形成。 通过对形成在SiC上的硼硅酸盐玻璃硼源进行退火，得到硼等P型掺杂剂。 然后取出玻璃。 在另外的实施方案中，掺杂剂可以被注入，用玻璃涂覆，然后退火。 掺杂导致SiC中的浅平面结。