SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD
    69.
    发明申请
    SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD 有权
    半导体器件及相关制造方法

    公开(公告)号:US20150279607A1

    公开(公告)日:2015-10-01

    申请号:US14558050

    申请日:2014-12-02

    Inventor: Deyuan XIAO

    Abstract: A semiconductor device may include the following elements: a semiconductor substrate, an insulator positioned on the substrate, a source electrode positioned on the insulator, a drain electrode positioned on the insulator, a gate electrode positioned between the source electrode and the drain electrode, a hallow channel surrounded by the gate electrode and positioned between the source electrode and the drain electrode, a dielectric member positioned between the hollow channel and the gate electrode, a first insulating member positioned between the gate electrode and the source electrode, and a second insulating member positioned between the gate electrode and the drain electrode.

    Abstract translation: 半导体器件可以包括以下元件:半导体衬底,位于衬底上的绝缘体,位于绝缘体上的源电极,位于绝缘体上的漏电极,位于源电极和漏电极之间的栅电极, 由栅极电极包围并定位在源极和漏电极之间的中间通道,位于中空通道和栅电极之间的电介质构件,位于栅电极和源电极之间的第一绝缘构件和第二绝缘构件 位于栅电极和漏电极之间。

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