摘要:
In a variable-shape mirror (1) of which the shape of the mirror surface can be varied, four piezoelectric elements (4) are sandwiched between a support base (2) and a mirror portion (3), and are arranged symmetrically in cross-shaped directions. The piezoelectric elements (4) are bonded to the mirror portion (3), and serve both to vary the shape of the mirror portion (3) by being driven and to fix the mirror portion (3) to the support base (2). Support portions (5) are arranged one inside each of the piezoelectric elements (4). With this structure, a small movement that the piezoelectric elements (4) produce when driven can be converted into a large movement of the mirror portion (3).
摘要:
An optical resin film, which has Re (λ) and Rth (λ) satisfying retardation requirements (A) to (D), and has an in-plane width direction retardation (Re) variation coefficient of 5% or less and a thickness direction retardation (Rth) variation coefficient of 10% or less: (A) 0.1
摘要:
In a variable-shape mirror provided with a support base, a mirror portion that is disposed to face the support base and that has, on a side thereof facing away from the support base, a mirror surface which is irradiated with a light beam, and piezoelectric elements that are sandwiched between the support base and the mirror portion and that vary the shape of the mirror surface, the piezoelectric elements are bonded, by means of a thin layer of metal, to at least one of the support base and the mirror portion by the application of heat and pressure.
摘要:
In a variable-shape mirror (1) of which the shape of the mirror surface can be varied, four piezoelectric elements (4) are sandwiched between a support base (2) and a mirror portion (3), and are arranged symmetrically in cross-shaped directions. The piezoelectric elements (4) are bonded to the mirror portion (3), and serve both to vary the shape of the mirror portion (3) by being driven and to fix the mirror portion (3) to the support base (2). Support portions (5) are arranged one inside each of the piezoelectric elements (4). With this structure, a small movement that the piezoelectric elements (4) produce when driven can be converted into a large movement of the mirror portion (3).
摘要:
A laser thermal transfer recording method comprises: dispensing a thermal transfer sheet and an image-receiving sheet to an exposure recording device; cutting each of the sheets into pieces of a predetermined length; superposing each of the cut pieces of the image-receiving sheet on each of the cut pieces of the thermal transfer sheet; loading an exposure drum installed in the exposure recording device with the thus superposed pieces of sheets; and irradiating the sheets loaded on the exposure drum with a laser beam according to image information, in which the laser beam is absorbed in the thermal transfer sheet and converted into a heat, and an image is transferred onto the image-receiving sheet by the heat converted from the laser beam, wherein each surface of the thermal transfer sheet and the image-receiving sheet is cleaned by contacting with an adhesive roller that includes an adhesive material on its surface, in which the adhesive roller is disposed in any one of a feeding part and a conveying part of the thermal transfer sheet and the image-receiving sheet in the exposure recording device, and the image-receiving sheet has a thickness of 110 to 160 μm, and at least one of pieces of the thermal transfer sheet and pieces of the image-receiving sheet is stacked while be blown.
摘要:
Semiconductor strain measuring apparatus for producing electrical output signals indicative of physical strains, in which a single crystal silicon substrate has the impurity concentration within the range between 1.times.10.sup.16 cm.sup.-3 and 2.times.10.sup.19 cm.sup.-3, thereby inhibiting the increase in the reverse leakage current flowing from the strain gauge through the substrate at high temperatures and thus enabling exact measurements even at high temperatures above 180.degree. C.
摘要翻译:用于产生指示物理应变的电输出信号的半导体应变测量装置,其中单晶硅衬底的杂质浓度在1×10 16 cm -3和2×10 19 cm -3之间的范围内,从而抑制从该应变流出的反向漏电流的增加 在高温下测量基板,从而即使在高于180℃的高温也能进行精确测量。