摘要:
A two-dimensional photonic crystal laser according to the present invention includes a two-dimensional photonic crystal layer 15 having a base body made of AlαGa1-αAs (0
摘要:
The present edge-emitting semiconductor layer element includes two-dimensional photonic crystals 4 formed in a semiconductor layer, and when one direction of a contact region of an electrode 8 is provided as a length direction (X-direction) and a direction perpendicular to both of the length direction and a thickness direction of a substrate is provided as a width direction (Y-direction), the two-dimensional photonic crystals 4 are, when viewed from a direction (Z-axis) perpendicular to the substrate, located in a region containing the electrode contact region and wider in the width direction than the contact region, and have a refractive index periodic structure in which the refractive index satisfies a Bragg's diffraction condition while periodically changing at every interval along the one direction (X-axis).
摘要:
Two-dimensional photonic crystal surface-emitting laser comprising a two-dimensional photonic crystal, having media different in refractive index arrayed in a two-dimensional cycle, disposed in the vicinity of an active layer that emits light by the injection of carriers, wherein the two-dimensional photonic crystal consists of square lattices having equal lattice constants in perpendicular directions, and a basic lattice consisting of a square with one medium as a vertex has an asymmetric refractive index distribution with respect to either one of the two diagonals of the basic lattice to thereby emit light in a constant polarizing direction.
摘要:
One objective of the present invention is to provide a laser device which is capable of scanning beams of a laser light of high output power at a high speed without using mechanical scanning mechanisms. A plurality of the upper electrodes 33 is linearly arranged in the photonic crystal laser provided with an active layer 21 and a two-dimensional photonic crystal layer 23 which are held between upper electrodes 33 and a lower electrode 27. A current is introduced from one upper electrode 33 or the plurality of the upper electrodes 33 disposed adjacently. Therefore, the active layer 21 generates light and the light is intensified by diffraction in the two-dimensional photonic crystal layer 23, so that a stronger laser light is emitted to the outside from around the upper electrodes 33 into which a current is introduced. When the current-injected upper electrodes are sequentially switched, a laser light scan is performed in the direction of the array of the upper electrodes. Since this switching can be made electrically, a laser light scan can be achieved at a high speed without using the mechanical scanning mechanisms.
摘要:
A semiconductor device has a two-dimensional slab photonic crystal structure in which a substrate supports a sheet-like slab layer including, sequentially stacked, a lower cladding layer, an active layer, and an upper cladding layer. A periodic refractive index profile structure, in surfaces of the stacked layers, introduces a linear defect region that serves as a waveguide. A p-type region and an n-type region in the slab layer define a pn junction surface at a predetermined angle with respect to the surfaces of the stacked layers in the slab layer.
摘要:
A two-dimensional photonic crystal surface-emitting laser having a photonic crystal (20) in which a photonic crystal periodic structure (21) is located in or near an active layer (first medium) (12) which emits light when carriers are injected thereto. The photonic crystal periodic structure (21) comprises a second medium with a refractive index different from that of the active layer scattered in two-dimensional periodic array. The photonic crystal periodic structure is of a square lattice structure or a triangular lattice structure which has translation symmetry but does not have rotation symmetry. Alternatively, the phtonic crystal periodic structure is of a square lattice structure or a rectangular lattice structure which is classified into pl, pm, pg or cm according to the two-dimensional pattern classification method. It is the most desirable that the lattice structure is composed of triangular lattice points.
摘要:
In an optical device, a slab layer includes an active layer sandwiched between cladding layers. The slab layer has a periodic refractive index profile structure in a two-dimensional plane, as a two-dimensional slab photonic crystal structure, and a linear defect region serving as a waveguide in the periodic refractive index profile structure. Regions having different widths of the waveguides, as segments of the waveguide, are connected in series.
摘要:
Two pieces of semiconductor wafers 101 and 102 to be stacked and fused together are secured to wafer holders 201 and 202 respectively, and are then integrally held at a wafer hold unit 2. Rough position alignment is first applied to these semiconductor wafers 101 and 102 while supplying infrared light thereto from an infrared light source 30 of an infrared light system 3 for detection of a resultant lattice image at a detection unit 5. Then, fine position alignment is performed while supplying laser light from an laser light source 40 of a laser light system 4 for detection of a resultant diffraction image at the detection unit 5. Thus, in the manufacture of a semiconductor device having its crystal structure with three-dimensional periodical refractive index distribution employing precision multilayer stack methods by using a wafer fusion, a method and apparatus for manufacturing the semiconductor device is realized which is capable of achieving precise position alignment between lattice layers stacked over each other with reduced complexity in position alignment thereof.
摘要:
A photonic crystal laser capable of producing a radially-polarized halo-shaped laser beam having a smaller width than conventional beams includes: an active layer; a ring-shaped photonic crystal including a plate-shaped base body on one side of the active layer, the base body having a number of modified refractive index areas of the same shape, the modified refractive index areas having a refractive index different from the base body and periodically arranged in the circumferential direction of a ring, and each of the modified refractive index areas being asymmetrically shaped with respect to an axis extending through the center of the modified refractive index area in the radial direction of the ring; a first and second electrode facing each other across the active layer and the ring-shaped photonic crystal; and a window provided in the second electrode capable of allowing passage of a laser light generated from the ring-shaped photonic crystal.
摘要:
A two-dimensional photonic crystal laser light is provided. The two-dimensional photonic crystal laser includes a two-dimensional photonic crystal made of a plate-shaped member provided with a periodic arrangement of identically-shaped modified refractive index areas having a refractive index different from that of the plate-shaped member; and an active layer provided on one side of the two-dimensional photonic crystal. The modified refractive index areas are arranged at lattice points of a lattice with a same period at least in two directions; each modified refractive index area is shaped so that a feedback strength is different with respect to directions of two primitive lattice vectors of the lattice; the two-dimensional photonic crystal has a periodic structure of a supercell, which contains a plurality of lattice points; and the sum of the feedback strengths by all modified refractive index areas in the supercell is identical in each direction of the two primitive lattice vectors.