公开(公告)号：US20210240078A1

公开(公告)日：2021-08-05

申请号：US17005636

申请日：2020-08-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sumin KIM ,  Hyunwoo KIM ,  Sukkoo HONG ,  Yechan KIM ,  Juyoung KIM ,  Jinjoo KIM ,  Juhyeon PARK ,  Hyunji SONG ,  Songse YI

IPC: G03F7/004 ,  C07C381/12 ,  C07C309/12 ,  G03F7/039

Abstract: A photo-decomposable compound includes an anion component including an adamantyl group and a cation component including a C5 to C40 cyclic hydrocarbon group and forming a complex with the anion component. At least one of the adamantyl group and the cyclic hydrocarbon group has a substituent, which decomposes by acid and generates an alkali soluble group. The substituent includes an acid-labile protecting group. A photoresist composition includes a chemically amplified polymer, the photo-decomposable compound, and a solvent. To manufacture an integrated circuit (IC) device, a photoresist film is formed using the photoresist composition on a feature layer, a first area of the photoresist film is exposed to generate a plurality of acids from the photo-decomposable compound in the first area, the chemically amplified polymer is deprotected due to the plurality of acids, and the first area is removed to form a photoresist pattern.

公开(公告)号：US20180308705A1

公开(公告)日：2018-10-25

申请号：US16023836

申请日：2018-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： SHIGENOBU MAEDA ,  Jeong Ju PARK ,  Eunsung KIM ,  Hyunwoo KIM ,  Shiyong YI

IPC: H01L21/308 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/3086 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32139

Abstract: A method includes forming mask patterns spaced apart from each other by at least one opening on an etch target layer, filling the opening with a block copolymer material including first and second polymer blocks of different properties, and annealing the block copolymer material to form first patterns and second patterns, the first patterns in contact with facing sidewalls of adjacent ones of the mask patterns, respectively, and at least one of the second patterns between the first patterns. The first patterns include the first polymer blocks and the second patterns include the second polymer blocks.

公开(公告)号：US20180164682A1

公开(公告)日：2018-06-14

申请号：US15702839

申请日：2017-09-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin PARK ,  Hyunwoo KIM

IPC: G03F7/038 ,  G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26 ,  C08F112/14 ,  C08F120/28 ,  H01L21/027

Abstract: A photoresist composition includes a photosensitive polymer including a polymer chain and at least one first functional group coupled to the polymer chain, and a photoacid generator. The first functional group has a structure represented by the following Chemical Formula 1, where R1 is one of an alkyl group having a carbon number of 1 to 20 and an aryl group having a carbon number of 1 to 20, and R2 is one of —H, —F, —Cl, —Br, an alkyl group having a carbon number of 1 to 20, and an aryl group having a carbon number of 1 to 20.

公开(公告)号：US20160215085A1

公开(公告)日：2016-07-28

申请号：US14981194

申请日：2015-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junwon HAN ,  Su-Jin KWON ,  Seungwon KIM ,  Hyunwoo KIM ,  Jungsik CHOI

IPC: C08F293/00 ,  C08L53/00

CPC classification number: C08F6/12 ,  C08L53/00

Abstract: The inventive concepts provide methods of purifying a block copolymer and methods of forming a pattern using the same. The purifying method is performed using a first adsorbent. The first adsorbent has adsorbability with respect to a first polymer block having a molecular weight equal to or greater than a first average molecular weight. The purifying method further includes purifying a synthesized polymer using a second adsorbent. The second adsorbent interacts with a second polymer block.

Abstract translation: 本发明的概念提供了纯化嵌段共聚物的方法和使用其形成图案的方法。 纯化方法使用第一吸附剂进行。 第一吸附剂相对于分子量等于或大于第一平均分子量的第一聚合物嵌段具有吸附性。 纯化方法还包括使用第二吸附剂纯化合成的聚合物。 第二吸附剂与第二聚合物嵌段相互作用。