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    Directional acoustic sensor
    61.
    发明授权
    Directional acoustic sensor 有权

    公开(公告)号：US11627410B2

    公开(公告)日：2023-04-11

    申请号：US17717920

    申请日：2022-04-11

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Cheheung Kim ,  Sungchan Kang ,  Hyeokki Hong ,  Hyunwook Kang ,  Yongseop Yoon ,  Choongho Rhee

    IPC: H04R1/32 ,  H04R3/00 ,  H04R17/10

    Abstract: A compact directional acoustic sensor having an improved signal-to-noise ratio is disclosed. The disclosed directional acoustic sensor includes a first sensing device configured to generate different output gains based on different input directions of external energy, and configured to generate at least one first output signal having a first polarity based on external energy received from an input direction; a second sensing device configured to generate different output gains based on different input directions of external energy, and configured to generate at least one second output signal having a second polarity, that is different than the first polarity, based on the external energy received from the input direction; and at least one signal processor configured to generate at least one final output signal based on the at least one first output signal and the at least one second output signal.

    Voice recognition system and display device using the same
    62.
    发明授权
    Voice recognition system and display device using the same 有权

    公开(公告)号：US11587565B2

    公开(公告)日：2023-02-21

    申请号：US16920894

    申请日：2020-07-06

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Cheheung Kim ,  Jaehyung Jang ,  Hyeokki Hong

    IPC: G10L15/22 ,  G10L15/30

    Abstract: Disclosed are a voice recognition system and a display device using the same. The disclosed voice recognition system includes a plate structure, a vibration sensor, and a voice recognition device. The plate structure vibrates based on propagation of a voice wave generated from a user, and the vibration sensor is provided in contact with the plate structure to detect the vibration of the plate structure. The voice recognition device recognizes voice of the user by receiving a signal output from the vibration sensor.

    Filter system including resonator
    66.
    发明授权
    Filter system including resonator 有权

    公开(公告)号：US11050410B2

    公开(公告)日：2021-06-29

    申请号：US16597069

    申请日：2019-10-09

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sungchan Kang ,  Cheheung Kim ,  Sangha Park ,  Yongseop Yoon ,  Choongho Rhee

    IPC: H03H9/54 ,  G01H11/08 ,  H03H9/24 ,  H04R17/02 ,  H04R17/10 ,  H03H9/13 ,  H04R25/00

    Abstract: A filter system includes a first resonator having a first resonant frequency, and a second resonator having a second resonant frequency different from the first resonant frequency, and electrically connected to the first resonator. A first response characteristic of the first resonator and a second response characteristic of the second resonator with respect to a frequency include a first section in which a first phase of the first resonator is equal to a second phase of the second resonator, and a second section in which the first phase is different from the second phase by 180 degrees. A first electrode of the first resonator is reversely connected to a second electrode of the second resonator.

    PLASMA DICING METHOD
    68.
    发明申请
    PLASMA DICING METHOD 有权

    公开(公告)号：US20210013043A1

    公开(公告)日：2021-01-14

    申请号：US16696513

    申请日：2019-11-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Choongho Rhee ,  Sungchan Kang ,  Hyunwook Kang ,  Cheheung Kim ,  Yongseop Yoon ,  Jaehyung Jang ,  Hyeokki Hong

    IPC: H01L21/3065 ,  H01L21/56 ,  H01L21/02 ,  H01L21/683

    Abstract: Provided is a plasma dicing method. The plasma dicing method includes: performing plasma etching on a first surface of a substrate exposed between a plurality of membrane structures; forming a passivation layer on a semiconductor wafer to cover the plurality of membrane structures and at least one trench; performing plasma etching on a second surface of the substrate such that a through hole exposing a portion of the plurality of membrane structures and a dicing lane connected to the trench and having a width less than a width of the through hole are formed at the substrate; and removing the passivation layer and singulating the semiconductor wafer into a plurality of devices including a membrane partially exposed by the through hole.

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