METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

    公开(公告)号:US20240429052A1

    公开(公告)日:2024-12-26

    申请号:US18660507

    申请日:2024-05-10

    Abstract: A method of manufacturing a semiconductor device includes sequentially forming an etch target film and an insulating film on a substrate. A first photoresist film is formed on the insulating film. A first photoresist pattern is formed exposing a first region of the insulating film by patterning the first photoresist film. A protective film is formed covering the first photoresist pattern and the first region of the insulating film. A second photoresist pattern is formed exposing a second region of the protective film. The protective film covers the first photoresist pattern during the forming of the second photoresist pattern. A first trench is formed by etching the etch target film using the first photoresist pattern. A second trench is formed by etching the etch target film using the second photoresist pattern. The forming of the first trench is performed after the forming of the second photoresist pattern.

    METHOD AND APPARATUS FOR RECONFIGURATION FUNCTIONAL SPLIT OPTION OF DIGITAL UNIT AND RADIO UNIT IN WIRELESS COMMUNICATION SYSTEMS

    公开(公告)号:US20240406758A1

    公开(公告)日:2024-12-05

    申请号:US18680933

    申请日:2024-05-31

    Abstract: The present disclosure relates to a 5G communication system or a 6G communication system for supporting higher data rates beyond a 4G communication system such as long term evolution (LTE). The disclosure relates to a method performed by an radio unit (RU) of a base station in a wireless communication system, particularly, the disclosure may provide a method performed by an RU of a base station in a wireless communication system, comprising preparing for a functional split reconfiguration, receiving a functional split reconfiguration message from a digital unit (DU) of the base station, and reconfiguring a functional split option so that an artificial intelligence (AI) function of the RU is moved to the DU based on split option reconfiguration information included in the functional split reconfiguration message.

    SEMICONDUCTOR MEMORY DEVICE
    64.
    发明公开

    公开(公告)号:US20240130108A1

    公开(公告)日:2024-04-18

    申请号:US18369552

    申请日:2023-09-18

    CPC classification number: H10B12/315 H10B12/05

    Abstract: A semiconductor memory device includes a substrate, a bit line on the substrate, word lines provided on the bit line and spaced apart in a first direction parallel to a top surface of the substrate, a back gate electrode provide between a pair of adjacent word lines among the word lines, active patterns provided between the back gate electrode and the pair of adjacent word lines, contact patterns respectively provided on the active patterns, a first back gate insulating pattern provided between the bit line and the back gate electrode, and a second back gate insulating pattern and a third back gate insulating pattern which are provided on the back gate electrode, where the back gate upper insulating pattern includes a material having a first dielectric constant and the back gate lower insulating pattern includes a material having a second dielectric constant that is greater than the first dielectric constant.

    INTEGRATED CIRCUIT DEVICE
    66.
    发明公开

    公开(公告)号:US20230262962A1

    公开(公告)日:2023-08-17

    申请号:US18107589

    申请日:2023-02-09

    CPC classification number: H10B12/482 H10B12/315 H10B12/34 H10B12/02

    Abstract: An integrated circuit device includes a substrate having an active area, bit line structures on the substrate, the bit line structures including an insulating spacer on each sidewall thereof, a buried contact between the bit line structures, the buried contact being connected to the active area, an insulation capping pattern on each of the bit line structures, a barrier conductive layer covering side surfaces of the insulation capping pattern, and an upper surface and side surfaces of the insulating spacer, and a landing pad electrically connected to the buried contact, the landing pad vertically overlapping one of the bit line structures on the insulation capping pattern and the barrier conductive layer.

    METHOD FOR TRANSMITTING DATA, AND DEVICE THEREFOR

    公开(公告)号:US20220174135A1

    公开(公告)日:2022-06-02

    申请号:US17601021

    申请日:2020-03-25

    Abstract: Disclosed is an electronic device including at least one wireless communication circuit configured to provide a first radio access technology (RAT) and a second RAT, at least one processor operatively connected to the at least one wireless communication circuit and configured to provide a first packet data convergence protocol (PDCP) related to the first RAT and a second PDCP related to the second RAT, a volatile memory operatively connected to the at least one processor and including, in at least a partial region thereof, a first buffer, and a nonvolatile memory operatively connected to the at least one processor or coupled to the processor. The electronic device may change a PDCP version of a data packet based on a change of a PDCP version. Besides, other various embodiments recognized through the present disclosure can be made.

    ELECTRONIC DEVICE SUPPORTING DUAL CONNECTIVITY AND METHOD OF OPERATING THE SAME

    公开(公告)号:US20200329399A1

    公开(公告)日:2020-10-15

    申请号:US16839967

    申请日:2020-04-03

    Abstract: An electronic device may include a first communication processor supporting first network communication with a first network, and a second communication processor supporting second network communication with a second network different from the first network. When both of the first network communication and the second network communication are set to a data transmittable state, the second communication processor may be configured to transmit transmission data based on the second network communication selected as a primary path from between the first network communication and the second network communication, when the size of the transmission data is less than a predetermined threshold. In response to detection of a failure in the second network communication, the first communication processor may be configured to transmit the transmission data based on the first network communication, irrespective of whether the size of the transmission data is equal to or larger than the predetermined threshold.

    TRANSMIT POWER CONTROL APPARATUS AND METOD OF ELECTRONIC DEVICE IN WIRELESS COMMUNICATION SYSTEM

    公开(公告)号:US20200305091A1

    公开(公告)日:2020-09-24

    申请号:US16821226

    申请日:2020-03-17

    Abstract: An apparatus and method for controlling transmit power of an electronic device in a wireless communication system are provided. A proposed method for a base station as a master node of an electronic device in an evolved universal terrestrial radio access (E-UTRA) new radio (NR) dual connectivity (EN-DC) environment to communicate with the electronic device via a first radio access technology (RAT) in a first band includes performing a random access procedure with the electronic device, inquiring and receiving electronic device capability information from the electronic device, determining whether to add a secondary node supporting communication with the electronic device via a second RAT in a second band that is different from the first band, and transmitting an updated power allocation value to the electronic device along with a secondary node addition command based on the electronic device capability information indicating that the electronic device does not support dynamic power sharing, the update power allocation value being set based on the electronic device capability information and uplink power information for transmission to the second node.

Patent Agency Ranking