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    SEMICONDUCTOR DEVICE
    1.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230292492A1

    公开(公告)日：2023-09-14

    申请号：US18174028

    申请日：2023-02-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kijoon KIM

    IPC: H10B12/00

    CPC classification number: H10B12/315 ,  H10B12/482 ,  H10B12/05

    Abstract: A semiconductor device includes: a bit line; an active semiconductor layer on the bit line, having a first portion extending in a vertical direction and a second portion connected to the first portion and extending in a horizontal direction, including an oxide semiconductor; a word line on a side wall of the active semiconductor layer; a gate insulating layer between the active semiconductor layer and the word line; a first contact on the active semiconductor layer, having a bottom at a level lower than a top surface of the word line and a top at a level higher than the top surface of the word line, including an oxide semiconductor containing a first dopant; a second contact adjacent to the second portion of the active semiconductor layer on the bit line and including an oxide semiconductor containing a second dopant; and a landing pad on the first contact.

    SEMICONDUCTOR DEVICES
    3.
    发明公开
    SEMICONDUCTOR DEVICES 审中-公开

    公开(公告)号：US20230387279A1

    公开(公告)日：2023-11-30

    申请号：US18106631

    申请日：2023-02-07

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kijoon KIM

    IPC: H01L29/76 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L29/775 ,  H01L21/02 ,  H01L29/66

    CPC classification number: H01L29/7606 ,  H01L29/0673 ,  H01L29/24 ,  H01L29/42392 ,  H01L29/775 ,  H01L21/02603 ,  H01L21/02568 ,  H01L29/66969

    Abstract: A semiconductor device includes channel structures spaced apart in a vertical direction; lower/upper first gate insulation patterns contacting lower/upper surfaces of the channel structures; a gate electrode surrounding lower/upper surfaces and a sidewall of the channel structures; and source/drain layers at sides of the gate electrode, wherein the channel structures include first/second 2D material layers stacked in the vertical direction, the first 2D material layer includes a semiconducting TMD including a first transition metal and first chalcogen elements that are bonded at lower/upper sides of the first transition metal, the second 2D material layer includes a second transition metal and a second chalcogen element, the second chalcogen element being bonded at a lower side of the second transition metal, and the second transition metal included in the second 2D material layer is covalently or ionically bonded with an element of the upper first gate insulation pattern.

    INTEGRATED CIRCUIT DEVICES
    4.
    发明申请
    INTEGRATED CIRCUIT DEVICES 有权

    公开(公告)号：US20230078026A1

    公开(公告)日：2023-03-16

    申请号：US17903159

    申请日：2022-09-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kijoon KIM

    IPC: H01L29/423 ,  H01L21/02 ,  H01L27/108

    Abstract: An integrated circuit device including a substrate including a word line trench and a first recess adjacent to a first side wall portion of an inner wall of the word line trench, a channel region on the inner wall and extending in a first direction parallel to an upper surface of the substrate, the channel region including a first channel region in a portion of the substrate adjacent to the inner wall and a second channel region on the inner wall and including a two-dimensional (2D) material of a first conductivity type, a gate insulating layer on the second channel region, a word line on the gate insulating layer and inside the word line trench, and a source region in a first recess and including the 2D material of the first conductivity type may be provided.

    MODULE COMPRISING ANTENNA AND RF ELEMENT, AND BASE STATION INCLUDING SAME
    5.
    发明申请
    MODULE COMPRISING ANTENNA AND RF ELEMENT, AND BASE STATION INCLUDING SAME 有权

    公开(公告)号：US20210344120A1

    公开(公告)日：2021-11-04

    申请号：US17373000

    申请日：2021-07-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kwanghyun BAEK ,  Seungtae KO ,  Kijoon KIM ,  Juho SON ,  Sangho LEE ,  Youngju LEE ,  Jungyub LEE ,  Yonghun CHEON ,  Dohyuk HA

    IPC: H01Q21/06 ,  H01Q1/42 ,  H01Q1/24 ,  H05K1/18 ,  H04B7/0413 ,  H05K9/00

    Abstract: A communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT) are provided. The disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. According to the disclosure, an antenna module includes a first substrate layer on which at least one substrate is stacked; an antenna coupled to an upper end surface of the first substrate layer; a second substrate layer having an upper end surface coupled to a lower end surface of the first substrate layer and on which at least one substrate is stacked; and a radio frequency (RF) element coupled to a lower end surface of the second substrate layer.

    MODULE COMPRISING ANTENNA AND RF ELEMENT, AND BASE STATION INCLUDING SAME
    6.
    发明申请
    MODULE COMPRISING ANTENNA AND RF ELEMENT, AND BASE STATION INCLUDING SAME 有权

    公开(公告)号：US20210126379A1

    公开(公告)日：2021-04-29

    申请号：US17062990

    申请日：2020-10-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kwanghyun BAEK ,  Seungtae KO ,  Kijoon KIM ,  Juho SON ,  Sangho LEE ,  Youngju LEE ,  Jungyub LEE ,  Yonghun CHEON ,  Dohyuk HA

    IPC: H01Q21/06 ,  H01Q1/24 ,  H01Q1/42 ,  H04B7/0413 ,  H05K1/18

    Abstract: A communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT) are provided. The disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. According to the disclosure, an antenna module includes a first substrate layer on which at least one substrate is stacked; an antenna coupled to an upper end surface of the first substrate layer; a second substrate layer having an upper end surface coupled to a lower end surface of the first substrate layer and on which at least one substrate is stacked; and a radio frequency (RF) element coupled to a lower end surface of the second substrate layer.

    MODULE COMPRISING ANTENNA AND RF ELEMENT, AND BASE STATION INCLUDING SAME
    7.
    发明申请
    MODULE COMPRISING ANTENNA AND RF ELEMENT, AND BASE STATION INCLUDING SAME 有权

    公开(公告)号：US20210075124A1

    公开(公告)日：2021-03-11

    申请号：US17063929

    申请日：2020-10-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kwanghyun BAEK ,  Seungtae KO ,  Kijoon KIM ,  Juho SON ,  Sangho LEE ,  Youngju LEE ,  Jungyub LEE ,  Yonghun CHEON ,  Dohyuk HA

    IPC: H01Q21/06 ,  H05K1/18 ,  H04B7/0413 ,  H01Q1/42 ,  H01Q1/24

    Abstract: A communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT) are provided. The disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. According to the disclosure, an antenna module includes a first substrate layer on which at least one substrate is stacked; an antenna coupled to an upper end surface of the first substrate layer; a second substrate layer having an upper end surface coupled to a lower end surface of the first substrate layer and on which at least one substrate is stacked; and a radio frequency (RF) element coupled to a lower end surface of the second substrate layer.

    SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
    9.
    发明公开
    SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME 审中-公开

    公开(公告)号：US20240284678A1

    公开(公告)日：2024-08-22

    申请号：US18488409

    申请日：2023-10-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kijoon KIM

    IPC: H10B51/20

    CPC classification number: H10B51/20

    Abstract: A semiconductor device including a stack structure including a plurality of gate lines and a plurality of insulating patterns, the plurality of gate lines being apart from each other in a vertical direction, the plurality of insulating patterns being one-by-one between the plurality of gate lines, the stack structure including a vertical hole passing therethrough in the vertical direction, a channel film extending in the vertical direction inside the vertical hole, and a composite domain dielectric film between the channel film and the stack structure, wherein the composite domain dielectric film includes a main domain including a ferroelectric material, the main domain extending in the vertical direction inside the vertical hole, and at least one sub-domain including at least one material selected from an anti-ferroelectric material and a paraelectric material, the at least one sub-domain being in contact with the main domain may be provided.

    MODULE COMPRISING ANTENNA AND RF ELEMENT, AND BASE STATION INCLUDING SAME
    10.
    发明申请
    MODULE COMPRISING ANTENNA AND RF ELEMENT, AND BASE STATION INCLUDING SAME 有权

    公开(公告)号：US20210075123A1

    公开(公告)日：2021-03-11

    申请号：US17063918

    申请日：2020-10-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kwanghyun BAEK ,  Seungtae KO ,  Kijoon KIM ,  Juho SON ,  Sangho LEE ,  Youngju LEE ,  Jungyub LEE ,  Yonghun CHEON ,  Dohyuk HA

    IPC: H01Q21/06 ,  H05K1/18 ,  H04B7/0413 ,  H01Q1/42 ,  H01Q1/24

    Abstract: A communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT) are provided. The disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. According to the disclosure, an antenna module includes a first substrate layer on which at least one substrate is stacked; an antenna coupled to an upper end surface of the first substrate layer; a second substrate layer having an upper end surface coupled to a lower end surface of the first substrate layer and on which at least one substrate is stacked; and a radio frequency (RF) element coupled to a lower end surface of the second substrate layer.

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