公开(公告)号：US20210376031A1

公开(公告)日：2021-12-02

申请号：US16333997

申请日：2018-10-31

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhen SONG ,  Guoying WANG

IPC: H01L27/32 ,  H01L51/56 ,  H01L27/12

Abstract: A display backplane includes a substrate, a thin film transistor over the substrate, and a pixel capacitor assembly over a side of the thin film transistor away from the substrate, and an orthographic projection of the pixel capacitor assembly on the substrate covers at least one portion of an orthographic projection of the thin film transistor on the substrate. The pixel capacitor assembly includes a first electrode, a passivation layer, and a second electrode, sequentially over a side of the thin film transistor away from the substrate, and an orthographic projection of the first electrode on the substrate is overlapped with the orthographic projection of the thin film transistor on the substrate. A display panel including the display backplane can further include an OLED component, arranged over a side of the pixel capacitor assembly away from the substrate.

公开(公告)号：US20210280645A1

公开(公告)日：2021-09-09

申请号：US17253093

申请日：2020-06-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ling WANG ,  Yicheng LIN ,  Guoying WANG ,  Ying HAN

IPC: H01L27/32 ,  H01L51/52 ,  H01L51/56

Abstract: Provided are a display substrate, a manufacturing method thereof and a display device. The display substrate includes a base and a plurality of subpixels arranged on the base in an array form. Each subpixel includes a light-emitting element, a subpixel driving circuitry coupled to the light-emitting element, and a light-emission detection circuitry configured to detect luminescence of light emitted by the light-emitting element. The light-emission detection circuitry includes a first control transistor and a PIN-type photodiode laminated in that order in a direction away from the base, a first electrode of the first control transistor is coupled to a cathode of the PIN-type photodiode, and an orthogonal projection of the first control transistor onto the base at least partially overlaps an orthogonal projection of the PIN-type photodiode onto the base. The display substrate provided by the present disclosure is used for display

公开(公告)号：US20210257581A1

公开(公告)日：2021-08-19

申请号：US17270969

申请日：2020-05-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guoying WANG ,  Zhen SONG

IPC: H01L51/52 ,  H01L27/32 ,  H01L51/56

Abstract: An array substrate includes: a base; light shield layers and a first auxiliary electrode that are disposed on the base; at least one insulating layer covering the light shield layers and the first auxiliary electrode; first electrodes that are disposed on the at least one insulating layer, a conductive connection portion; a pixel definition layer defining light-emitting regions and covering the conductive connection portion; organic light-emitting layers disposed on the first electrodes and located in the light-emitting regions defined by the pixel definition layer; and at least one second electrode covering the pixel definition layer and the organic light-emitting layers. A second electrode is electrically connected to the conductive connection portion through a via that penetrates through the pixel definition layer. The conductive connection portion is electrically connected to the first auxiliary electrode through a via that penetrates through the at least one insulating layer.

公开(公告)号：US20210226067A1

公开(公告)日：2021-07-22

申请号：US16097486

申请日：2018-03-02

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guoying WANG ,  Zhen SONG

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/66

Abstract: The present disclosure provides a thin film transistor and a method for fabricating the same, an array substrate, and a display panel for enhancing the light shielding effect on a channel region of a thin film transistor, improving the light stability of the thin film transistor and improving the operational stability of the thin film transistor. The thin film transistor according to embodiments of the disclosure includes a light shielding layer and a buffer layer on the light shielding layer, an active layer on the buffer layer, and the active layer includes a channel region, a source region, and a drain region located on two sides of the channel region, the buffer layer being disposed such that light cannot be incident to the channel region via the buffer layer.

公开(公告)号：US20210083137A1

公开(公告)日：2021-03-18

申请号：US16633372

申请日：2019-07-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ling WANG ,  Yicheng LIN ,  Cuili GAI ,  Pan XU ,  Guoying WANG

IPC: H01L31/103 ,  H01L31/0224 ,  H01L31/18 ,  H01L27/146

Abstract: The present disclosure provides an optoelectronic sensor and a manufacturing method thereof, and an optoelectronic device and a manufacturing method thereof. The optoelectronic sensor includes a first electrode, a first semiconductor layer, a second semiconductor layer and a second electrode arranged in a stack, wherein each of the first semiconductor layer and the second semiconductor layer is a metal oxide semiconductor layer, the first electrode is a transparent electrode and has a work function greater than that of the first semiconductor layer; and the first semiconductor layer has a conductivity smaller than that of the second semiconductor layer, and has a work function greater than that of the second semiconductor layer.

公开(公告)号：US20210036075A1

公开(公告)日：2021-02-04

申请号：US16841190

申请日：2020-04-06

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guoying WANG ,  Zhen SONG

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/52 ,  H01L51/56

Abstract: A display substrate, a method for manufacturing the same, and a display device are provided. The method includes: forming a thin film transistor (TFT) array layer on a base substrate; forming a planarization layer covering the TFT array layer; forming a transition layer on the planarization layer, an adhesion between the transition layer and a photoresist is weaker than an adhesion between the planarization layer and the photoresist; forming the photoresist on the transition layer, exposing and developing the photoresist to form a first photoresist pattern; by using the first photoresist pattern as a mask, etching the transition layer to form a first via hole, and etching the planarization layer through the first via hole to form a second via hole, an orthographic projection of the first via hole onto the base substrate overlaps with an orthographic projection of the second via hole onto the base substrate.

公开(公告)号：US20200227491A1

公开(公告)日：2020-07-16

申请号：US16567704

申请日：2019-09-11

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guoying WANG ,  Zhen SONG

IPC: H01L27/32 ,  H01L51/56 ,  G09G3/3225

Abstract: The present disclosure relates to the field of the display technology and provides a display substrate and a manufacturing method thereof, a display panel, and a display apparatus. The manufacturing method of the display substrate includes forming an optical compensation control thin film transistor on a side of a base substrate; forming a conductor protective layer on a side of the optical compensation control thin film transistor facing away from the base substrate; forming an optical detecting device material layer on a side of the conductor protective layer facing away from the base substrate; forming an optical detecting device through patterning the optical detecting device material layer; and forming a conductor pattern layer through patterning the conductor protective layer; where, the optical detecting device is electrically connected with a source electrode or a drain electrode of the optical compensation control thin film transistor through the conductor pattern layer.

公开(公告)号：US20200075701A1

公开(公告)日：2020-03-05

申请号：US16417127

申请日：2019-05-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhen SONG ,  Guoying WANG

IPC: H01L27/32 ,  H01L51/52 ,  H01L51/56

Abstract: A transparent display substrate, a manufacturing method thereof and a transparent display panel are provided. The transparent display substrate includes: a base substrate; a plurality of sub-pixels arranged on the substrate, wherein each of the plurality of sub-pixels comprising a light emitting region and a first transparent region, and the light emitting region being provided with an organic light emitting diode (OLED); a driving circuit, located in each of the plurality of sub-pixels and configured to drive the OLED to emit light, the driving circuit comprising a capacitor disposed in the first transparent region.

公开(公告)号：US20200058717A1

公开(公告)日：2020-02-20

申请号：US16453058

申请日：2019-06-26

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhen SONG ,  Guoying WANG

IPC: H01L27/32

Abstract: The present disclosure provides an organic light emitting display substrate and a method for manufacturing the same. The organic light emitting display substrate includes a substrate, and a drive transistor and an organic light emitting diode disposed on the substrate. In a direction away from the substrate, the organic light emitting diode successively includes: a first reflective electrode, an organic light emitting layer, and a second reflective electrode. A drain of the drive transistor is electrically coupled to the first reflective electrode. The organic light emitting display substrate further includes a light guide layer. One side surface of the light guide layer is the light incident surface. The light incident surface is disposed opposite to the light outgoing surface of the organic light emitting diode so that the light emitted from the light outgoing surface enters the light guide layer.

公开(公告)号：US20200035834A1

公开(公告)日：2020-01-30

申请号：US16077846

申请日：2018-01-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jiangbo CHEN ,  Young Suk SONG ,  Hongda SUN ,  Guoying WANG ,  Wei LIU

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/44 ,  H01L29/66

Abstract: The present disclosure relates to a thin film transistor, a method for fabricating the same, an array substrate, a method for fabricating the same, and a display device. The thin film transistor includes an active layer disposed on a base substrate and a gate stack disposed on the active layer. The gate stack includes: a gate insulating layer disposed on the active layer; a gate electrode disposed on the gate insulating layer; a capping layer disposed on the gate electrode, wherein the capping layer capturing oxygen atoms more easily than the gate electrode.