公开(公告)号：US20050248992A1

公开(公告)日：2005-11-10

申请号：US10998987

申请日：2004-11-30

Applicant: Sang-Won Hwang ,  Jin-Yub Lee ,  Bum-Soo Kim ,  Kwang-Yoon Lee ,  Cha-Nik Park

Inventor： Sang-Won Hwang ,  Jin-Yub Lee ,  Bum-Soo Kim ,  Kwang-Yoon Lee ,  Cha-Nik Park

IPC: G11C16/04 ,  G11C16/06 ,  G11C16/10 ,  G11C16/30 ,  G11C16/34

CPC classification number: G11C16/10 ,  G11C16/0483 ,  G11C16/30 ,  G11C16/3454

Abstract: Method and device for programming control information, such as a flag, a control flag, a mark, or a control mark. The method and device may perform a lower-speed programming of a given cell type in a first area of memory array, confirm a result of the lower-speed programming of the given cell type in the first area of memory array, and perform a higher-speed programming of the given cell type in a second area of memory array after confirming the result of the lower-speed programming, wherein an initial programming voltage of the higher-speed programming may be different from that of the lower-speed programming. The first and second programming may be different, for example, the first programming may be a lower-speed operation, such as the writing of data, and the second programming may be a higher-speed operation, such as the writing of control information. The first and second programming methods may also be different, for example, the first programming method may be a programming method that does not permit over-programming and the second programming method may be a programming method that does permit over-programming.

Abstract translation: 用于编程控制信息的方法和装置，例如标志，控制标志，标记或控制标记。 该方法和装置可以在存储器阵列的第一区域中执行给定小区类型的低速编程，确认在存储器阵列的第一区域中给定小区类型的较低速度编程的结果，并且执行更高的 在确认低速编程的结果之后，在存储器阵列的第二区域中对给定单元类型的速度编程，其中较高速度编程的初始编程电压可能与低速编程的初始编程电压不同。 第一和第二编程可以是不同的，例如，第一编程可以是诸如写入数据的低速操作，并且第二编程可以是诸如写入控制信息的更高速的操作。 第一和第二编程方法也可以不同，例如，第一编程方法可以是不允许过度编程的编程方法，并且第二编程方法可以是允许过度编程的编程方法。