摘要:
A touch screen panel includes first and second substrates disposed to face each other, conductive sensing cells in a touch active area on a first surface of the first substrate that faces the second substrate, a black matrix in a non-touch active area on a first surface of the second substrate that faces the first substrate, the non-touch active area being positioned outside the touch active area, an adhesive layer between the first and second substrates, the adhesive layer joining the first and second substrates together, and an insulating layer in the touch active area on the first substrate, the insulating layer covering the conductive sensing cells and overlapping a concave portion formed on the first surface of the second substrate by the black matrix.
摘要:
A light emitting device according to the embodiment includes a support substrate; a first light emitting structure disposed on the support substrate and including a first conductive type first semiconductor layer, a first active layer, and a second conductive type second semiconductor layer; a first reflective electrode under the first light emitting structure; a first metal layer around the first reflective electrode; a second light emitting structure disposed on the support substrate and including a first conductive type third semiconductor layer, a second active layer, and a second conductive type fourth semiconductor layer; a second reflective electrode under the second light emitting structure; a second metal layer around the second reflective electrode; and a contact part making contact with an inner portion of the first conductive type first semiconductor layer of the first light emitting structure and electrically connected to the second reflective electrode.
摘要:
A light emitting device is provided that includes a light emitting structure (including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer), a conductive layer, an insulation layer, and a current blocking layer. The conductive layer may have a first conductive portion that passes through the second conductive type semiconductor layer and the active layer to contact the first conductive type semiconductor layer. The insulation layer may have a first insulation portion that surrounds the first conductive portion of the conductive layer. The current blocking layer may substantially surround the first insulation portion of the insulation layer, the first insulation portion provided between the current blocking layer and the first conductive portion.
摘要:
Discussed is a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer, and a transmissive conductive layer at least one part between the second conductive semiconductor layer and the second electrode layer.
摘要:
A light emitting device according to the embodiment may include a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer; an electrode on the light emitting structure; a protection layer under a peripheral region of the light emitting structure; and an electrode layer under the light emitting structure, wherein the protection layer comprises a first layer, a second layer, and a third layer, wherein the first layer comprises a first metallic material, and wherein the second layer is disposed between the first layer and the third layer, the second layer has an insulating material or a conductive material.
摘要:
A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a conductive supporting member, an N-type semiconductor layer on the conductive supporting member; an active layer on the N-type semiconductor layer, a P-type semiconductor layer on the active layer, an ohmic contact layer on the P-type semiconductor layer, and an electrode on the ohmic contact layer.
摘要:
A touch screen panel includes: a substrate; a sensor that is disposed at the center of the substrate; a metal wire pattern that is disposed at a periphery of the sensor and that has at least a portion that is connected to the sensor; an insulation layer that covers the metal wire pattern; and a ground line that is disposed between the edge of the substrate and the metal wire pattern.
摘要:
Disclosed are a light emitting device, a method of manufacturing the same, a light emitting device package, and an illumination system. The light emitting device includes a transmissive substrate, an ohmic layer on the transmissive substrate, a light emitting structure on the ohmic layer and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second semiconductor layers, a electrode layer on a bottom surface of the transmissive substrate, and a conductive via electrically connecting the light emitting structure with the electrode layer through the transmissive substrate wherein an area of the transmissive substrate is increased toward an upper portion thereof from a lower portion.
摘要:
A display device comprises: a display module for displaying images; a window integrated touch panel disposed on an upper portion of the display module and spaced apart from the display module; and a polarizing plate disposed under the window integrated touch panel. The polarizing plate is disposed under the window integrated touch panel so as to allow the polarizing plate to absorb light incident on a lower portion of the polarizing plate while preventing the window integrated touch panel from being scattered to the display module due to external impact, thereby making it possible to improve external light visibility.
摘要:
The embodiment discloses a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer; a first electrode layer below the first conductive semiconductor layer; a semiconductor layer at an outer peripheral portion of the first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; and a second electrode layer on the second conductive semiconductor layer.