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61.发明授权公开(公告)号：US11286364B2
公开(公告)日：2022-03-29
申请号：US16609739
申请日：2018-10-23
发明人： Yunping Feng
摘要： A method for preparing a polymer mould-free stereostructure foamed product from supercritical fluid, containing a supercritical fluid delivery system, a stereoscopic foaming system and a preheating system, and has the following steps: performing pressure molding on a polymer material to obtain a foaming preform, then preheating the foaming preform in the preheating system, delivering the foaming preform to the stereoscopic foaming system after a temperature rises to a preheating temperature, introducing the supercritical fluid, and decompressing after the supercritical fluid is swelled and diffused to the polymer. The polymer is swelled using high-temperature medium-pressure supercritical fluid by utilizing a one-step method in a stereoscopic foaming tank and then subjected to free mould-free stereoscopic pressure-relief form molding, so as to obtain a polymer microcellular foamed product with controllable product shape, size precision, pore fineness and product density.
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公开(公告)号：US11284710B1
公开(公告)日：2022-03-29
申请号：US17098428
申请日：2020-11-15
发明人： Hongsheng Guo
摘要： An adjustment device, having a tilting piece at a top front portion of a shell and rotates about a top front edge of the shell; a gear is at one side of the shell and fixedly connected to one side of the tilting piece, and is rotatable synchronously with the tilting piece; a position limiting piece is provided at a rear side of the gear, and is capable of engaging with the gear; a driving piece is provided in an inclined manner inside the shell; the driving piece and the position limiting piece are connected through a driving rod that passes through an inner side wall of the shell and drives the position limiting piece to move; a far end of the driving piece is connected with one end of a control string; another end of the control string is extended out of the shell to be pulled or released.
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公开(公告)号：US11284180B2
公开(公告)日：2022-03-22
申请号：US16616457
申请日：2018-05-23
申请人： Aidao Zhu
发明人： Aidao Zhu
摘要： A safe earphone includes a wired safe earphone and an over ear safe headphone, having plurality of speakers with different frequency responses respectively used for two ears to listen, so the frequency response is particularly good; it is provided with a noise reduction signal conversion system which effectively converts the transmission of the active noise reduction frequency signal into the transmission of the passive audio signal and then restore to the transmission of the active audio signal after transmission of 1000 mm in length, therefore human body is isolated from radiation of communication at a long distance, which achieves a good a high degree of radiation protection, and solving the technical problem that the microphone of the existing radiation-proof earphone must be placed outside the air tube. Therefore, the invention is an excellent safe earphone achieving highly radiation-proof, having high sound quality and noise reduction function.
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70.发明授权公开(公告)号：US11227881B2
公开(公告)日：2022-01-18
申请号：US16648248
申请日：2018-07-06
发明人： Koji Suzuki , Zhuo Chen , Yixian Zhang , Fan Zhang , Siyu Ren , Junhai Su , Jianhua Li
IPC分类号： H01L27/12 , H01L21/265 , H01L21/266 , H01L21/3213 , H01L29/49 , H01L29/66 , H01L29/786
摘要： Disclosed in the present invention are a method for manufacturing a thin-film transistor, an array substrate, and a display device. The method includes: forming a buffer layer on a substrate; forming a polysilicon layer on the buffer layer; performing a patterning process on the polysilicon layer, to form an active layer; depositing a gate insulating layer on the active layer; depositing a gate metal layer on the gate insulating layer, and performing dry etching on the gate metal layer by using the patterning process and by using a gas containing CO as an etching gas, to form a gate; performing ion implantation on the active layer by using the gate as a mask, to form a source region and a drain region; and depositing a passivation layer on the gate, forming through holes in the gate insulating layer and the passivation layer, and manufacturing a source and a drain.
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